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中国物理学会期刊

基于磁光选择-多端口架构的太赫兹隔离器

CSTR: 32037.14.aps.75.20251289

Terahertz isolator based on magneto-optical selection–multi-port architecture

CSTR: 32037.14.aps.75.20251289
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  • 针对反射信号携带有效信息的太赫兹系统, 如太赫兹时域反射系统、全双工通信系统等, 现有非互易太赫兹器件在实现隔离过程中常将反射信号视为干扰信号而进行削减, 无法适配上述系统对于在隔离的同时定向导出并检测反射信号的需求. 针对这一局限, 本研究创新性地提出一种基于磁光选择-多端口架构的太赫兹隔离器, 该器件通过正交双重光栅将线偏振光转换为特定圆偏振态, 结合InSb材料的磁光选择性, 构建非互易传输路径; 并在磁光调控机制中创新融入分支波导多端口特性, 同步实现入射/反射信号隔离与反射信号定向导出. 通过仿真结构尺寸与外界环境对该器件非互易特性的影响得到: 在温度为250 K, 磁场0.3 T条件下, 该器件在0.73 THz处实现了63.12 dB的高隔离度, 且在0.78 THz处双向传输效率达到36.31%, 3 dB带宽达到0.25 THz. 该器件具有高隔离度、低工作磁场强度、集成双重功能等优势, 为太赫兹应用于无损检测、通信等更多领域提供必要支撑.

     

    For terahertz systems where reflected signals carry effective information, such as terahertz time-domain reflection systems and full-duplex communication systems, existing nonreciprocal terahertz devices often treat reflected signals as interference and suppress them during isolation. This makes them incompatible with the requirements of such systems for isolating incident signals while directionally extracting and detecting reflected signals. To address this limitation, this study innovatively proposes a terahertz isolator based on a magneto-optical selection–multi-port architecture. The device converts linearly polarized light into a specific circular polarization state through orthogonal double gratings, and by combining the magneto-optical selectivity of InSb material, a nonreciprocal transmission path is constructed. Furthermore, the magneto-optical regulation mechanism innovatively combines branch waveguides with multiple ports and the characteristic of regulating terahertz transmission paths, while achieving isolation of incident/reflected signals and directionally extracting the reflected signals. The simulations of the influences of structural dimensions and external environmental conditions on the nonreciprocal characteristics of the device indicate that when the temperature is 250 K, the magnetic field is 0.3 T, and the structural parameters are set as follows: branch length of 170 μm, center-to-center spacings of adjacent branches of 125 μm, 125 μm, 120 μm, and 120 μm, InSb layer thickness of 5 μm, grating layer thickness of 50 μm, and substrate layer thickness of 20 μm, then the device achieves a high isolation of 63.12 dB at 0.73 THz. Additionally, at 0.78 THz, the bidirectional transmission efficiency reaches 36.31%, with a 3 dB bandwidth of 0.25 THz. This device has the advantages such as high isolation, low operating magnetic field strength, and integration of dual functions. It reduces interference from incident signals on reflected signals, simplifies subsequent processing steps such as noise reduction and localization of effective reflected signals, and improves the system's detection performance for weak signals. This provides essential support for expanding terahertz applications to more fields, including non-destructive testing and communication.

     

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