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本文提出一种新型延伸多晶硅栅体硅型横向绝缘栅双极晶体管（Extended polysilicon Gate Bulk Silicon LIGBT，EGBS-LIGBT），该器件结构为P型衬底上依次外延N型、P型硅作为N漂移区和P漂移区，相当于将常规SOI-LIGBT的埋氧层替换成N型硅，其优势在于极大降低成本且能降低空穴衬底电流。在阳极正偏时，P漂移区上方的肖特基型延伸多晶硅栅（Schottky-Extended polysilicon Gate，S-EG）在P漂移区的内侧表面形成电子反型层，以获得低的正向导通压降（Von）。此外，阳极采用肖特基接触降低空穴注入效率，而P漂移区快速的动态电场调制能力还可迅速提取存储在漂移区中的过剩载流子，且其多子为空穴还能促进关断时过剩电子的快速复合，关断能量损耗（Eoff）得以降低。仿真结果表明：EGBS-LIGBT在显著降低空穴衬底电流的同时，改善了Eoff与Von间的折衷关系。该器件的Von为1.59V、空穴衬底电流为1.9mA/cm2、Eoff为0.51mJ/cm2、击穿电压（BV）达701V。相较常规LIGBT，该结构在保持Von基本不变的前提下，将空穴衬底电流降至1/105、Eoff降低69.8%、BV提升19.6%。This paper proposes a new extended polysilicon gate bulk silicon lateral insulated gate bipolar transistor (EGBS-LIGBT). In order to suppress the hole substrate current, N-type and P-type silicon are epitaxially grown on the P-substrate sequentially to serve as N-drift and P-drift. The PN junction composed of two drift regions is in a reverse-biased state during both normal conduction and off states of the device. The built-in potential within it forms a hole-blocking barrier to prevent holes from moving towards the substrate. Meanwhile, a Schottky-extended polysilicon gate (S-EG) is added on the P-drift, forming a thin electron-inversion layer on the inner surface of the P-drift, which can achieve a low on-state voltage (Von). In addition, the Schottky contact at the anode reduces hole injection efficiency, while the rapid dynamic electric field modulation capability of P-drift enables the swift extraction of excess carriers stored in this region. The majority carriers in the P-drift being holes can also accelerate the recombination with the excess electrons during the turn-off phase. The above factors help to reduce the turn-off time and the turn-off energy loss (Eoff). Simulation results show that EGBS-LIGBT effectively reduces the hole substrate current while improves the trade-off relationship between Eoff and Von. In this paper, EGBS-LIGBT has a Von of 1.59 V, hole substrate current is 1.9 mA/cm2, Eoff is 0.51 mJ/cm2, and breakdown voltage (BV) is 701V. Compared with conventional LIGBT, Von is approximately equal, hole substrate current is reduced to 1/105 of it, Eoff is reduced by 69.8%, and BV is improved by 19.6%.
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Keywords:
- LIGBT /
- Hole substrate current /
- Turn-off loss /
- Schottky contact
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