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中国物理学会期刊

交错磁研究进展: 材料物性与交叉应用

CSTR: 32037.14.aps.75.20251637

Recent advances in altermagnetism research: Material properties and cross applications

CSTR: 32037.14.aps.75.20251637
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  • 交错磁作为反铁磁材料的一个新兴研究分支, 凭借其独特的对称性特征和非相对论性自旋劈裂, 在实现Néel矢量的高效调控方面展现出显著优势, 为自旋电子学器件的设计提供了新途径. 本文基于自旋群对称性理论, 首先阐释交错磁区别于传统反铁磁材料的电子结构特性; 随后以MnTe和CrSb等典型材料体系为例, 系统地综述了交错磁的制备方法及表征手段; 接着梳理了利用电流脉冲、晶格应变和热激发等外场调控手段实现Néel矢量翻转与自旋-轨道力矩调制的机制与进展; 并在此基础上对交错磁在磁随机存取存储器、拓扑自旋器件及磁子学、光-自旋耦合等多学科交叉领域的应用潜力进行了讨论; 最后总结当前交错磁在材料体系拓展与对称性精确调控等方面面临的挑战, 并对与其相关的界面工程等研究方向提出展望.

     

    As an emerging magnetic phase distinct from traditional ferromagnetism and antiferromagnetism, altermagnetism has garnered significant attention due to its combining zero net magnetization with momentum-dependent spin splitting. This paper provides a comprehensive analysis of the field based on spin-group symmetry theory to elucidate the unique electronic structure in which time-reversal symmetry breaking and crystal rotation operations occur, rather than translation or inverse, enhancing Kramer degeneracy without the need for relativistic spin-orbit coupling. The experimental aspects are surveyed using representative systems such as MnTe, CrSb, and RuO2. The progress of growing high-quality films through molecular beam epitaxy (MBE) and magnetron sputtering is described in detail, as well as the direct visualization of giant band splitting and domain textures by using angle-resolved photoemission spectroscopy (ARPES) and photoemission electron microscopy (PEEM). Furthermore, the mechanism for manipulating Néel vector is systematically examined, with a focus on strategies involving current-induced spin-splitting torque (SST), lattice strain engineering, and thermal modulation, enabling efficient readout and writing of magnetic states. In addition to the basic properties, the discussion extends to the frontier of material exploration, including metal, two-dimensional and superconducting altermagnets, and evaluation of their transformative potential in high-density magnetic random-access memory (MRAM), topological spintronics, and ultrafast magnonics. The review ultimately identifies the current challenges in material expansion and interface engineering, outlining a roadmap for transitioning altermagnets from fundamental discoveries to practical applications in the next-generation information technology.

     

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