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中国物理学会期刊

SiS分子辐射缔合过程的理论研究

Theoretical Study on the Radiative Association Process of SiS Molecules

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  • 硅硫化合物作为星际富硅环境中的分子示踪物,其经由辐射缔合形成的微观机制尚不明确,在一定程度制约了天体物理化学领域的发展。本文通过对SiS分子辐射缔合过程关键参数的计算研究,为星际模型提供坚实的物理基础。首先,运用多参考组态相互作用方法icMRCI+Q方法对SiS分子18个Λ-S态的势能曲线、光谱常数以及电偶极跃迁矩展开计算。通过全量子方法,计算结果显示,SiS分子辐射缔合截面随碰撞能量呈现复杂共振结构,并明确将其共振特征与电子态势阱深度关联。其中,11Π、21Σ+的深势阱中产生多个连续的共振峰,21Π这类浅势阱产生了尖锐的分立峰。获取宽温域10-20,000 K的辐射缔合速率系数,并拟合为可直接嵌入主流天体化学模型的参数公式,填补了该关键反应的数据缺失。该研究成果将会为星际SiS分子提供具有可靠性的微观反应数据,进一步增进对富硅环境中分子非绝热形成过程的认知,同时为相关多电子分子体系辐射过程的研究提供了理论范例。

     

    In the present study, the radiative association mechanism of interstellar silicon sulfide (SiS) was systematically investigated via high-level quantum chemical calculations. Specifically, the icMRCI+Q method combined with the aug-cc-pwCVTZ-DK basis set was employed to compute the potential energy curves (PECs) for 18 Λ-S states of SiS correlated to the Si(3Pg)+S(3Pg) dissociation limit. From these PECs, the spectroscopic constants of the SiS molecule were derived, and the calculated results showed excellent agreement with available experimental data and referenced theoretical values, thereby validating the reliability of the adopted computational approach.
    Furthermore, the electric dipole transition moments (EDTMs) between the ground state (X1Σ+) and three low-lying excited states(11Π, 21Π, 21Σ+) were characterized, and they were observed to exhibit a decay trend with increasing internuclear distance—a characteristic that is consistent with the neutral dissociation pathway of SiS, providing key insights into the molecular dissociation dynamics.
    A core innovation of this work lies in the comprehensive quantum mechanical characterization of the resonance structures in the radiative association cross-sections of SiS. The resonance characteristics were explicitly correlated with the depth of the potential wells of the electronic states, and the microscopic formation mechanism of these resonance structures was fully elucidated from the quantum level. Specifically, deep potential well states (11Π, 21Σ+) were found to induce resonance envelopes in the energy range of 0.244-1.000 eV, whereas the shallow potential well state (21Π) generated sharp resonance peaks around 10-3 eV.
    To facilitate its application in astrochemical modeling, the radiative association rate coefficients of SiS were calculated over a broad temperature range (10-20000 K) and fitted to a three-term Arrhenius-Kooij parameterized formula, which can be directly embedded into mainstream astrochemical reaction networks. Collectively, this study fills the long-standing data deficiency of this key interstellar reaction, provides a comprehensive quantum mechanical understanding of the SiS radiative association process, and offers crucial thermochemical and dynamical data that are indispensable for simulating silicon-sulfur chemical processes in interstellar clouds and circumstellar environments.

     

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