High-speed and high-efficiency photodetectors (PDs) have emerged as pivotal components in the realm of optical communication and detection. As the demand for PDs intensifies, there is a compelling need for continuous advancement in the domains of response speed, dark current reduction, and responsivity. Thicker absorber layers provide higher quantum efficiencies (QE) and higher absorption, but this comes with the cost of extended transport distances for photogenerated carriers, resulting in slower response speeds. Artificial structures such as waveguide structures, surface plasmon polariton structures, and resonant cavity structures are expected to circumvent this trade-off; however, these devices all have their respective shortcomings, such as complex structures, special requirements for the direction or wavelength of incident light, and reduction in coupling efficiency. Photon-trapping (PT)-enhanced photodetectors (PDs) with micro/nano-pillars/holes represent a compelling avenue for harnessing enhanced control over various PD attributes, including enhancing their QE, enhancing their response speed, and extending their sensitivity across a wider spectrum of wavelengths. Here, we review the evolution and recent developments of PT-enhanced PDs. To begin with, the theoretical developments of PT-enhanced PDs are presented. Next, the effect of PT on the characteristics of PDs and the subsequent progression of PT-enhanced PDs with various structures are introduced.