搜索

x
中国物理学会期刊

确定性超冷单离子源的制备

CSTR: 32037.14.aps.75.20260398

Deterministic ultracold single-ion source preparation

CSTR: 32037.14.aps.75.20260398
PDF
导出引用
  • 单粒子的制备、操控与探测是实验物理技术发展的重点方向之一. 其中确定性单离子的制备和纳米级定位作为新一代离子束技术的核心目标, 可为量子科技与原子级制造等前沿科技领域的发展提供关键技术支撑. 本文报道了一种基于时间关联测量的确定性单离子源技术. 利用磁光阱中冷原子光电离产生的电子-离子对的时间关联性, 通过符合测量技术, 将电子作为触发信号调控离子运动轨迹, 实现高保真度单离子源的确定性制备. 我们分别在连续流模式和单离子模式下对离子源性能进行表征: 在连续流模式下, 电子和离子计数率分别为4.9×103 s–1和4.9×104 s–1; 在单离子模式下, 电子-离子符合率最大值为53.5%, 单离子保真度为80.1%. 单离子的聚焦成像结果和基于实验参数的数值模拟结果表明, 确定性单离子源的发射度为(1.01±0.06)×10–10 m·rad·eV1/2, 亮度为(7.2±0.8)×102 A·m–2·Sr–1·eV–1, 满足确定性单离子纳米束技术开发的需求. 本方案在离子种类与单离子操控等方面具备良好的可扩展性, 在离子显微成像和高精度单离子注入等前沿领域方面展现出广阔的应用前景.

     

    The preparation, manipulation and detection of single particles represent one of the key research directions in the development of experimental physics. As the core objective of next-generation ion beam technology, the deterministic generation and nanoscale positioning of single ions can break through the technical limitations of on-demand extraction in conventional ion sources, providing critical technical support for the advancement of cutting-edge fields such as quantum technology and atomic-scale manufacturing. This paper reports on a deterministic single-ion source technique based on time-correlated measurements. By exploiting the time correlation between electron-ion pairs generated by photoionization of cold atoms in a magneto-optical trap, and using coincidence measurement where electrons serve as a trigger signal to control the ion trajectory, the technique achieves the deterministic preparation of a high-fidelity single-ion source. We characterize the ion source performance in both continuous-flow mode and single-ion mode: in continuous-flow mode, the electron and ion counting rates are 4.9×103 s–1 and 4.9×104 s–1, respectively. In single-ion mode, the maximum electron-ion coincidence rate is 53.5%, and the single-ion fidelity is 80.1%. The results of single-ion focusing imaging and numerical simulations based on experimental parameters indicate that the emittance of the deterministic single-ion source is (1.01±0.06)×10–10 m·rad·eV1/2, and the brightness is (7.2±0.8)×102 A·m–2·Sr–1·eV–1, meeting the requirements for the development of deterministic single-ion nanobeam technology. This approach offers excellent scalability in terms of ion species and single-ion manipulation. On the one hand, the method is applicable to all atomic systems that can be laser-cooled; on the other hand, by combining dynamic lens electric fields with electron-ion momentum correlation control, it is expected to enable ion beam aberration correction and spot optimization, further enhancing its overall performance. Therefore, this deterministic single-ion source holds broad application prospects in cutting-edge fields such as ion microscopy and high-precision single-ion implantation.

     

    目录

    /

    返回文章
    返回