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中国物理学会期刊

基于阵列碳纳米管的射频电子学研究进展

Research Progress in Radio-Frequency Electronics Based on Aligned Carbon Nanotube Arrays

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  • 硅基CMOS晶体管进入3 nm以下工艺节点后,其继续微缩受到了来自物理极限、成本和功耗等多方面的限制,需要寻找新的技术。碳纳米管(CNT)凭借高载流子迁移率、大饱和速度及低寄生参数等本征优势,成为突破传统半导体射频器件性能瓶颈的核心候选材料。本文系统综述基于阵列碳纳米管的射频电子学研究进展,阐述了涵盖阈值电压、跨导等电学指标与电流增益截止频率(fT)、最大振荡频率(fmax)、1 dB增益压缩点(P1dB)、输入三阶交调点(IIP3)的综合性能评估体系;详细阐述了化学气相沉积(CVD)法与溶液分散法的技术演进,实现了高取向、高纯度(>99.9999%)、晶圆级(10 cm/4英寸硅片)阵列碳纳米管的规模化制备;梳理了碳基射频器件的结构创新(T形栅、Y型栅等)与性能突破,2025年Y型栅极器件的fmax达1024 GHz,首次实现太赫兹频率的突破;深入分析了放大器、混频器、移相器等碳基射频电路的工作原理与性能优势,其中毫米波射频放大器的综合指标已初步达到商用器件水平;最后探讨了该技术在5G增强/6G通信、毫米波雷达、柔性电子等领域的应用潜力,指出当前规模化制备中直径均匀性、接触电阻优化及高频封装等产业化挑战,为该领域从实验室研究走向实际应用提供参考。

     

    As silicon-based transistors advance toward sub-3-nm process nodes, issues such as excessive leakage current and parasitic effects pose severe constraints on further performance scaling. Carbon nanotubes (CNTs) have emerged as a leading candidate for overcoming the performance limitations of conventional semiconductor radio-frequency (RF) devices, thanks to their intrinsic advantages, including high carrier mobility, high saturation velocity, and low parasitic parameters. This paper systematically reviews recent progress in RF electronics based on aligned carbon nanotube arrays. It introduces a comprehensive performance evaluation framework encompassing key electrical metrics (e.g., threshold voltage and transconductance) as well as RF figures of merit, including current gain cutoff frequency (fT), maximum oscillation frequency (fmax), 1 dB gain compression point (P1dB), and input third-order intercept point (IIP3). The technological advancements in chemical vapor deposition (CVD) and solution-based deposition techniques are discussed, highlighting the realization of wafer-scale (10 cm silicon wafer) aligned CNT arrays with high orientation and ultra-high purity (>99.9999%). Structural innovations in carbon-based RF devices—including T-gate and Y-gate architectures—are summarized, along with their associated performance breakthroughs. Notably, in 2025, a Y-gate CNT device achieved an fmax of 1024 GHz, representing the first breakthrough into the terahertz frequency regime. The operating principles and performance advantages of carbon-based RF circuits, such as amplifiers, mixers, and phase shifters, are analyzed in detail. Among these, millimeter-wave RF amplifiers have exhibited overall performance metrics that approach commercial-grade standards. Finally, the application potential of this technology in 5G-Advanced/6G communications, millimeter-wave radar, and flexible electronics is explored. The paper also addresses current industrialization challenges—including diameter uniformity, contact resistance optimization, and high-frequency packaging—that hinder the scaling of this technology from laboratory research to practical applications.

     

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