A spin valve is a typical multilayer stacked structure composed of two ferromagnetic layers separated by a nonmagnetic spacer layer. As a core component of spintronics, it is widely used in memory technologies such as magnetoresistive random-access memory, magnetic sensors, and programmable logic devices. In recent years, two-dimensional van der Waals (vdW) materials have exhibited unique advantages in atomically flat interfaces, low defect density, and adjustable electronic band structures, providing an effective pathway for the miniaturization and low power consumption of next-generation spin valve devices. In spin valves, the choice of spacer layer material is critical to device performance. Tellurium-doped black phosphorus (Te-doped BP) is a promising two-dimensional semiconductor with a tunable band gap. Te doping can effectively suppress oxidation degradation process of pristine black phosphorus and significantly enhanced environmental stability, which makes it as an ideal candidate for spin transport channels in vdW heterostructures. In this work, we successfully construct an all-two-dimensional Fe₃GeTe₂/Te-doped BP/Fe₃GeTe₂ vdW heterostructure, where the ferromagnetic Fe₃GeTe₂ nanosheets serve as the upper and lower magnetic electrodes, and the semiconductor Te-doped BP nanosheet acts as the intermediate nonmagnetic spacer layer. Systematic magnetotransport measurements are performed to investigate the spin-dependent transport behavior of the fabricated heterostructure. The measured magnetoresistance curves exhibit step-shape, indicating the spin-valve effect in the Fe₃GeTe₂/Te-doped BP/Fe₃GeTe₂ heterostructure. At the low temperature of 10 K, the heterostructure achieves a magnetoresistance ratio of 0.30%. Furthermore, the magnetoresistance remains largely unchanged as the direction of the applied magnetic field changes. This angular-insensitive magnetoresistance characteristic originates from strong perpendicular anisotropy of Fe₃GeTe₂, namely the fixed orientation of the magnetic moments relative to the applied magnetic field. These results not only confirm the feasibility of using Te-doped BP as a spin transport channel for two-dimensional spintronic devices but also clarify the angular-insensitive magnetoresistance property of Fe₃GeTe₂-based heterosture. This work broadens the potential application of doped black phosphorus in spintronic devices and provides a feasible experimental reference for the design and fabrication of low-dimensional spin valves with stable magnetotransport performance.