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中国物理学会期刊

Kekulé蜂窝晶格中拓扑角态与边界态的光电导响应特征

Optical conductivity signature of topological corner and edge states in Kekulé honeycomb lattice

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  • 本文通过研究六边形有限尺寸的Kekulé晶格纳米盘,发现了二维高阶拓扑绝缘体的拓扑角态和边界态在光电导中的特征响应。通过数值计算,研究了不同边长六边形纳米盘的能带结构和光电导。确认了满足边长条件L=4a0+3na0 (其中a0为每条键的长度,n=0,1,2,...)的六边形Kekulé晶格纳米盘属于二维高阶拓扑绝缘体。由于体能隙中存在拓扑角态和边界态,其光电导在低频区出现了额外的共振峰。而对于拓扑平庸绝缘体而言,光电导在该频段消失。研究发现这些额外光电导共振峰归因于二维高阶拓扑绝缘体的能带结构和光学选择定则。此外,只要化学势位于体能隙内,这些独特的光电导特征就可以被观察到,并且对无序引起的散射展宽具有一定鲁棒性。本文的研究从动力学角度扩展了对二维高阶拓扑绝缘体中拓扑角态和边界态的理解。同时,光电导的额外共振峰为光学探测二维高阶拓扑绝缘体的角态和边界态提供了一条有前景的途径。

     

    Over the past decades, the investigation of conventional first-order topological insulators (TIs) has attracted much attention in condensed matter physics. In contrast to conventional TIs with gapless edge states, two-dimensional higher-order topological insulators (2D HOTIs) host zero-dimensional in-gap corner states, which are spatially localized at geometric corners and energetically separated from both edge and bulk bands. Due to their localized nature and weak coupling to propagating states in external leads, these corner states do not naturally form robust transport channels, making their detection via direct current measurements challenging. Optical conductivity provides valuable information on charge dynamics and intrinsic band structures that is often diffcult to access through transport measurements. It is therefore natural to ask whether optical transitions among isolated corner states, edge states, and bulk states can generate distinct optical conductivity signatures.
    In this work, we take finite-size hexagonal nanodisks of the Kekulé lattice as a concrete example and identify optical conductivity signatures of topological corner and edge states in 2D HOTIs. We numerically investigate the band structures and optical conductivities of hexagonal nanodisks with different side lengths. Specifically, for the side length L = 4a0 + 3na0, where a0 is the length of each bond and n = 0, 1, 2,..., the hexagonal nanodisks of the Kekulé lattice are confirmed to be 2D HOTIs. In this case, additional corner and edge states appear within the band gap of the bulk states. Since optical transitions involving corner states, edge states, and bulk states provide extra transition channels in the bulk gap, they give rise to the characteristic low-frequency optical conductivity response. As a consequence, the optical conductivity exhibits additional resonant peaks in the low-frequency region, where the optical conductivity vanishes for trivial insulators. These additional resonant peaks are absent in trivial insulating nanodisks because there are no corresponding in-gap corner or edge states to participate in the optical transition processes. Moreover, these distinctive features of optical conductivity can be observed as long as the chemical potential is located in the bulk gap, and they are robust against disorder-induced scattering broadening. Our findings extend the theoretical understanding of the dynamical aspects of topological corner and edge states in 2D HOTIs. The additional resonant peaks in optical conductivity provide a promising route toward the optical detection of corner and edge states in 2D HOTIs.

     

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