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中国物理学会期刊

高压下准二维手性磁性材料Cr1/3TaS2的电输运性质研究

Electrical transport properties of quasi-two-dimensional chiral magnetic material Cr1/3TaS2 under high pressure

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  • 手性螺旋磁性材料Cr1/3TaS2具有强烈的自旋-晶格耦合效应与独特的拓扑磁态,是探索自旋电子学与量子输运现象的理想平台。本文利用金刚石对顶砧技术,系统研究了Cr1/3TaS2单晶在0.6-34.0 GPa的宽压力范围内的电输运及磁阻演化规律。研究发现,在0.6 GPa至5.0 GPa的低压区间,该材料保持良好的金属性,且长程磁有序转变温度随压力的增加从~150 K显著抑制至~75 K。当压力升高至7.0-20.0 GPa的中压区间时,材料表现出反常的类半导体输运行为,但电阻率绝对值依然维持在中等导体量级,表明可能的局域化效应或费米面赝能隙的打开主导了此压力区间下材料的散射机制。在23.0 GPa以上的高压区,晶格压缩引起的能带展宽使材料重新恢复为金属行为。此外,磁阻测试揭示,低压下材料由于自旋无序散射被抑制而呈现负磁阻,且在磁有序转变温度附近达到峰值;随着压力增加至13.0 GPa,磁阻发生由负转正的符号反转,从输运层面上暗示了体系内长程磁有序态可能发生了解体,且局域磁矩受到了强烈的压制。本工作系统揭示了Cr1/3TaS2在极端压力条件下的电输运及磁序演化规律,为理解层状磁性材料中晶格、电荷与自旋自由度的相互作用提供了关键的实验依据。

     

    The chiral helimagnetic material Cr1/3TaS2 features strong spin-lattice coupling effects and unique topological magnetic states, making it an ideal platform for exploring spintronics and quantum transport phenomena. In this study, high-quality Cr1/3TaS2 single crystals were synthesized via the chemical vapor transport method. We systematically investigated the in-plane electrical transport and magnetoresistance evolution of the material over a broad pressure range of 0.6 to 34.0 GPa. High-pressure measurements were conducted using a diamond anvil cell with a standard four-probe configuration in a physical property measurement system, covering temperatures down to 2 K and magnetic fields up to 9 T. Our experimental results reveal a complex, pressure-induced evolution of the electronic and magnetic ground states. In the low-pressure regime (0.6-5.0 GPa), the material maintains robust metallicity, while the long-range magnetic ordering transition temperature TC is significantly suppressed from ~150 K down to ~75 K, driven by enhanced interlayer coupling and modulated Ruderman-Kittel-Kasuya-Yosida interactions. As pressure increases to the intermediate range (7.0-20.0 GPa), the system exhibits an anomalous semiconductor-like transport behavior. However, the absolute resistivity remains on the order of a moderate conductor, suggesting that the scattering mechanism is dominated by weak localization effects or the opening of a pseudogap at the Fermi surface rather than a complete metal-insulator transition. Upon further compression above 23.0 GPa, extreme volume reduction induces severe band broadening, which overcomes the localization potentials and drives a re-entrant transition back to a conventional metallic state. Crucially, magnetoresistance measurements reveal a distinct sign reversal from negative to positive at 13.0 GPa. This anomaly provides compelling evidence for a pressure-induced "spin collapse" effect, marking the dissolution of the long-range magnetic ordered state and the severe suppression of local magnetic moments. This work elucidates the pressure-dependent electronic landscape of Cr1/3TaS2, providing vital experimental insights into the intricate interplay among the lattice, charge, and spin degrees of freedom in intercalated van der Waals magnetic materials.

     

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