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中国物理学会期刊

单层正交晶格MO2(M=Ge,Sn,Pb)电子结构、光电特性及SnO2/MoOCl2范德华异质结界面接触性质

Electronic Structure, Photoelectric Properties of the Orthogonal Lattice MO2 (M = Ge, Sn, Pb) monolayers and Interface Contact Properties of SnO2/MoOCl2 van der Waals Heterojunctions

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  • 基于密度泛函理论的第一性原理计算方法,系统研究单层正交晶格MO2(M=Ge、Sn、Pb)的电子结构、光学性质及SnO2/MoOCl2范德华异质结界面接触性质。研究结果表明,单层GeO2、SnO2和PbO2是带隙为2.92、2.12和0.95 eV的间接带隙半导体,具有良好的动力学、力学、热力学稳定性以及面内各向异性机械性能。单层GeO2、PbO2和SnO2带隙随着-6%~6%双轴拉伸应变的增大而减小,单层GeO2和PbO2带隙随着双轴压缩应变的增大逐渐增大,单层SnO2带隙随着双轴压缩应变的增大先增大后减小。单层GeO2和SnO2带隙在-6%~6%双轴应变范围内均超过1.23 eV,符合光催化分解水的带隙条件,在压缩应变范围内强酸和中性条件下具有光催化分解水的能力,单层PbO2仅在-6%压缩应变的强酸性条件下满足作为光催化剂分解水的基本条件。研究发现MO2单层的光学特性呈现各向异性,在拉伸应变下其光学吸收峰红移,有望更充分地吸收可见光以利于分解水。SnO2/MoOCl2范德华异质结界面呈现稳定n型欧姆接触特征。正交晶格MO2半导体在定向设计光电器件方面极具潜力,GeO2和SnO2单层可作为光催化剂候选材料,本文研究结果有望为MO2单层在纳米光电子学和光催化领域提供理论依据和设计思路。

     

    Two-dimensional materials have garnered significant attention due to their exceptional potential in electronic, optic and flexible nanodevices. Using first-principles calculations based on density functional theory, this paper systematically investigates the electronic structure, optical properties of the orthotropic MO2 (M=Ge, Sn, Pb) monolayers and interface contact properties of the SnO2/MoOCl2 van der Waals heterojunction. It has been demonstrated that the GeO2, SnO2 and PbO2 monolayers exhibit excellent dynamical, mechanical and thermodynamic stabilities, as well as in-plane anisotropic mechanical properties, and its indirect bandgap is 2.92, 2.12 and 0.95 eV, respectively. The bandgaps of the GeO2, PbO2 and SnO2 monolayers decrease with the increasing of the biaxial tensile strain, while those of the GeO2 and PbO2 monolayers gradually increase with increasing biaxial compressive strain. The bandgaps of the GeO2 and SnO2 monolayers both exceed 1.23 eV under the biaxial strains, falling within the bandgap range required for photocatalytic water splitting, and demonstrate full water-splitting capability under strong acidic and neutral conditions under the compressive strains. The optical absorption peak of the MO2 monolayers should redshift with the tensile strain, enhancing visible light absorption and facilitating water decomposition. Investigations on the contact properties of the SnO2/MoOCl2 van der Waals heterojunction interface reveal that it exhibits a strong n-type ohmic contact type. The findings indicate that the orthotropic lattice MO2 semiconductors behave significant potential for the directional design of optoelectronic devices. The GeO2 and SnO2 monolayers should be promising candidates for photocatalysts, providing both theoretical foundations and design insights for the application of two-dimensional materials in optoelectronic devices and photocatalysis.

     

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