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中国物理学会期刊

双极磁性二茂镍基单分子结中栅压调控的热驱动纯自旋流和自旋极化电流

Gate-voltage-tunable thermally driven pure spin current and spin-polarized current in a nickelocene-based bipolar-magnetic-molecule junction

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  • 利用电子的自旋替代电荷特性进行信息的存储和传递可以大幅降低电子器件的能耗.在分子尺度上实现自旋流的产生以及电流自旋极化率的操控是纳米/分子自旋电子学和自旋热电子学研究的核心目标.本文利用第一性原理计算研究了二茂镍基双极磁性分子的热驱动自旋输运特性.由于二茂镍前线分子轨道具有独特的双极自旋极化特性,即最高占据分子轨道和最低未占据分子轨道具有不同的自旋特性,当分子结两端电极存在温度梯度时,自旋塞贝克效应会使分子结中产生热驱动的自旋流和自旋极化电流.研究表明,通过栅压可以调控分子结电流的大小、方向及其自旋极化率.更为有趣的是,可以选择合适大小的栅压使流经分子结的电流为零,而仅存在自旋流.这为设计热驱动分子自旋过滤器件和超低功耗热驱动分子自旋电子器件提供了新的路径.

     

    The conversion of waste heat into spin signals at the molecular scale is a key goal in spin caloritronics. Using first-principles density functional theory (DFT) and nonequilibrium Green’s function (NEGF) method, we investigate thermally driven spin transport in a single-molecule junction based on a nickelocene (NiCp2) bipolar magnetic molecule (BMM), where the occupied and unoccupied molecular orbitals near the Fermi energy possess opposite spin polarizations. A dual-gate architecture enables efficient electrostatic tuning of the frontier orbitals relative to the Fermi energy.
    Our calculations reveal three distinct transport regimes controlled by the gate voltage Vg. At Vg = 0, the junction exhibits a strongly spin-up-polarized current (I = 29.19 nA, I = -0.71 nA at TL = 400 K, ΔT = 60 K), giving nearly 100% spin-up filtering. At Vg = 1.8 V, the spin-up and spin-down contributions become almost equal and opposite (I = 1.83 nA, I = -1.83 nA), resulting in nearly complete suppression of the charge current (Ic ≃ 0) while a pure spin current of Is = 3.66 nA persists. This arises from gateinduced symmetrization of the HOMO-/HOMO-1-derived (spin-up) and LUMO/LUMO+1-derived (spindown) transmission peaks relative to the Fermi energy. At Vg = 4 V, the spin-down channel dominates (I = -14.16 nA, I = 0.48 nA), reversing both the spin-polarization direction and the current flow. Quantitative analysis shows that gate voltage shifts the molecular levels with an efficiency of 13.2%- 15.9% per volt.
    We further evaluate the Seebeck coefficients. At room temperature and Vg = 1.8 V, the values at the Fermi energy are S = 28.1 μV/K, S = -29.0 μV/K, Ss = 57.1 μV/K, and Sc = -0.9 μV/K. The spin Seebeck coefficient consistently exceeds the charge counterpart, confirming superior spin-dependent thermoelectric conversion. Although the absolute values are one order of magnitude lower than some reported systems—due to the relatively smooth change in transmission spectra—this points to future optimization via molecular engineering (e.g., side groups or anchor modification) to enhance the transmission slope near the Fermi energy.
    In conclusion, our work demonstrates that a single BMM junction can be gate-tuned among three functional modes: spin-up filtering, pure spin-current generation, and spin-down filtering with reversed current. The generation of pure spin current without charge current, and thus without Joule heating, makes NiCp2-based BMMs promising for ultra-low-power molecular spin caloritronic devices, such as thermal spin logic and spin-based thermoelectric converters.

     

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