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中国物理学会期刊

射频磁控溅射法制备SnO2:Sb薄膜的结构和光致发光性质研究

CSTR: 32037.14.aps.54.1731

Structural and photoluminescence characters of SnO22:Sb thin films pr epared by rf magnetron sputtering

CSTR: 32037.14.aps.54.1731
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  • 采用射频磁控溅射法在玻璃衬底上制备出锑掺杂的氧化锡(SnO22:Sb)薄膜.制 备薄膜是具有纯氧化锡四方金红石结构的多晶膜薄,晶粒生长的择优取向为[110].室温下光致发光测量结果表明,在392nm附近存在强的紫外-紫光发射.研究了不同氧分压对薄膜结构及发光性质的影响,并对SnO22:Sb的光致发光机制进行了探索性研究.

     

    SnO22:Sb films have been prepared on glass substrates by rf magnetron sputtering method. The prepared samples are polycrystalline thin films with rutile structure of pure SnO22 and have orientation of [110] direction. The phot oluminescence of the samples was measured at room temperature. An ultraviolet-violet luminescence peak near 392nm was observed. The effect of different oxygen partia l pressures on the structure and luminescence was investigated, and the luminesc ent mechanism was also tentatively investigated.

     

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