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采用射频磁控溅射法在玻璃衬底上制备出锑掺杂的氧化锡(SnO22:Sb)薄膜.制 备薄膜是具有纯氧化锡四方金红石结构的多晶膜薄,晶粒生长的择优取向为[110].室温下光致发光测量结果表明,在392nm附近存在强的紫外-紫光发射.研究了不同氧分压对薄膜结构及发光性质的影响,并对SnO22:Sb的光致发光机制进行了探索性研究.
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关键词:
- SnO22:Sb薄膜 /
- 结构特征 /
- 光致发光 /
- 射频磁控溅射
SnO22:Sb films have been prepared on glass substrates by rf magnetron sputtering method. The prepared samples are polycrystalline thin films with rutile structure of pure SnO22 and have orientation of [110] direction. The phot oluminescence of the samples was measured at room temperature. An ultraviolet-violet luminescence peak near 392nm was observed. The effect of different oxygen partia l pressures on the structure and luminescence was investigated, and the luminesc ent mechanism was also tentatively investigated.-
Keywords:
- SnO22:Sb thin films /
- structural character /
- photoluminesce nce /
- rf magnetron sputtering method







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