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InGaAs/GaAs量子点阵列中的能级计算

杨晓杰 王 青 马文全 陈良惠

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InGaAs/GaAs量子点阵列中的能级计算

杨晓杰, 王 青, 马文全, 陈良惠

Calculation of energy levels in InGaAs/GaAs quantum dot array

Yang Xiao-Jie, Wang Qing, Ma Wen-Quan, Chen Liang-Hui
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  • 根据八带k·p理论,在三维InGaAs/GaAs量子点阵列中求解kx=ky=kz=0处的有效质量哈密顿H0的本征值,得到InGaAs量子点中导带中电子基态EC1,第一激发态EC2和重空穴态EHH1
    The subbands of the ground state EC1, the first excited state EC2 and heavy hole state EHH1 are calculated by solving the eigenvalues of effective-mass Hamiltonian H0 which is derived from eight-band k·p theory and the calculations are performed at kx=ky=kz=0 for the three-dimensional array of InGaAs/GaAs quantum dots (QDs). With indium content in InGaAs QDs gradually increasing from 30% to 100%, the intersubband transition wavelength of EC2 to EC1 blue-shifts from 18.50 to 11.87 μm,while the transition wavelength of EC1 to EHH1 red-shifts from 1.04 to 1.73 μm. With the sizes of In0.5Ga0.5As and InAs QDs increasing from 1.0 to 5.0 nm, the intersubband transition from EC1 to EC2 transforms from bound-state-to-continuum-state to bound-state-to-bound-state, and the corresponding intersubband transition wavelengths red-shift from 8.12 μm (5.90 μm) to 53.47 μm (31.87 μm), respectively, and the transition wavelengths of EC1 to EHH1 red-shift from 1.13 μm (1.60 μm) to 1.27 μm (2.01 μm), respectively.
    • 基金项目: 中国航天科工集团三院科技创新基金(批准号:HT3Y83582005)资助的课题.
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出版历程
  • 收稿日期:  2006-12-11
  • 修回日期:  2007-01-10
  • 刊出日期:  2007-09-20

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