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应变Si/(001)Si1-xGex空穴有效质量各向异性

宋建军 张鹤鸣 宣荣喜 胡辉勇 戴显英

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应变Si/(001)Si1-xGex空穴有效质量各向异性

宋建军, 张鹤鸣, 宣荣喜, 胡辉勇, 戴显英

Anisotropy of hole effective mass of strained Si/(001)Si1-xGex

Song Jian-Jun, Zhang He-Ming, Xuan Rong-Xi, Hu Hui-Yong, Dai Xian-Ying
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  • 基于应变Si/(001)Si1-xGex材料价带E(k)-k关系模型,研究获得了其沿不同晶向的空穴有效质量.结果表明,与弛豫材料相比,应变Si/(001)Si1-xGex材料价带带边(重空穴带)、亚带边(轻空穴带)空穴有效质量在某些k矢方向变化显著,各向异性更加明显.价带空穴有效质量与迁移率密切相关,该研究成
    There has been much interest in the Si-based strained materials lately, which was widely adopted in the high-speed and high-performance devices and circuits. Based on the valence band E(k)-k relation of strained Si/(001)Si1-xGex, the hole effective mass along arbitrarily k wavevector direction were obtained. It was found that in comparison with relaxed Si, the obvious change occurs in the hole effective mass of first and second valence band in strained Si/(001)Si1-xGex along specific k wavevector directions. The hole effective mass plays a significant role in the hole mobility enhancement. The results can supply valuable references to the investigation on the Si-based strained PMOS device performance and the conduction channel design related to stress and orientation.
    • 基金项目: 国家部委项目(批准号:51308040203,9140A08060407DZ0103)资助的课题.
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  • 文章访问数:  6326
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出版历程
  • 收稿日期:  2008-10-22
  • 修回日期:  2008-12-08
  • 刊出日期:  2009-07-20

应变Si/(001)Si1-xGex空穴有效质量各向异性

  • 1. 西安电子科技大学微电子学院,宽禁带半导体材料与器件教育部重点实验室,西安 710071
    基金项目: 国家部委项目(批准号:51308040203,9140A08060407DZ0103)资助的课题.

摘要: 基于应变Si/(001)Si1-xGex材料价带E(k)-k关系模型,研究获得了其沿不同晶向的空穴有效质量.结果表明,与弛豫材料相比,应变Si/(001)Si1-xGex材料价带带边(重空穴带)、亚带边(轻空穴带)空穴有效质量在某些k矢方向变化显著,各向异性更加明显.价带空穴有效质量与迁移率密切相关,该研究成

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