水蒸气退火多孔硅发光性能的正电子谱学研究

李卓昕; 王丹妮; 王宝义; 薛德胜; 魏龙; 秦秀波

doi:10.7498/aps.59.8915

摘要

使用正电子湮没寿命谱和正电子寿命-动量关联谱对水蒸气和真空条件下退火的多孔硅样品的微观缺陷结构进行表征,结合发射光谱测量结果,对影响多孔硅发光性能的因素进行了讨论.实验结果表明,水蒸气退火后样品孔壁表面的悬挂键减少,并出现新的E'γ和EX类缺陷.水蒸气退火后样品中两种缺陷数量发生变化是导致多孔硅样品发光增强的直接原因;真空退火未使样品中发光相关缺陷发生变化,样品的发光性能没有显著改变.

关键词:

Porous silicon (PS) treated by water vapor annealing and vacuum annealing has been studied by positron annihilation lifetime spectroscopy and age-momentum correlation measurement. It is found that after water vapor annealing, non-radiative defects are reduced and defects dominating light source appear. These two types of defects change the lifetime and the S parameter of the positron annihilation and cause a drastic enhancement in the photoluminescence (PL) efficiency. Defects that cause the PL of PS show no obvious change after annealing at 300 ℃ in vacuum, therefore the PL of the sample is not influenced.

Keywords:

作者及机构信息

(1)兰州大学磁学与磁性材料教育部重点实验室,兰州 730000; (2)兰州大学磁学与磁性材料教育部重点实验室,兰州 730000;中国科学院高能物理研究所核分析技术重点实验室,北京 100049; (3)中国科学院高能物理研究所核分析技术重点实验室,北京 100049

基金项目: 国家自然科学基金(批准号:10835006,10705031)资助的课题.

Authors and contacts

(1)Key Laboratory for Magnetism and Magnetic Materials of Ministry of Education, Lanzhou University, Lanzhou 730000, China; (2)Key Laboratory for Magnetism and Magnetic Materials of Ministry of Education, Lanzhou University, Lanzhou 730000, China;Key Laboratory of Nuclear Analysis Techniques, Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, China; (3)Key Laboratory of Nuclear Analysis Techniques, Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, China

参考文献

[1]	Canham L T 1990 Appl. Phys. Lett. 57 1046
[2]	Rahmani M, Moadhen A, Zahi M A, Elhouichet H, Oueslati M 2008 J. Lumin. 128 1763
[3]	Gelloz B, Koshida N 2006 Thin Solid Films 508 406
[4]	Gelloz B, Kojima A, Koshida N 2005 Appl. Phys. Lett. 87 031107
[5]	Qin G G, Li Y J 2003 Phys. Rev. B 68 085309
[6]	Huang W Q, Wang X Y, Zhang R T, Yu S Q, Qin C J 2009 Acta Phys. Sin. 58 4652 (in Chinese)[黄伟奇、王晓允、张荣涛、于示强、秦朝建 2009 物理学报 58 4652]
[7]	Puzder A, Williamson A J, Grossman J C, Galli G 2002 Phys. Rev. Lett. 88 097401
[8]	Hadjisavvas G, Kelires P C 2004 Phys. Rev. Lett. 93 226104
[9]	Godefroo S, Hayne M, Jivanescu M, Stesmans A, Zacharias M, Lebedev O I, Van Tendeloo G, Moshchalkov V V 2008 Nanotechnology 3 174
[10]	Pradeep J A, Agarwal P 2008 J. Appl. Phys. 104 123515
[11]	Lambrecht M, Almazouzi A 2009 J. Nucl. Mater. 385 334
[12]	Wang Z C, Teng M K, Liu Y C 1991 Acta Phys. Sin. 40 1973 (in Chinese)[王志超、藤敏康、刘吟春 1991 物理学报 40 1973]
[13]	Cassidy D B, Mills A P Jr 2008 Phys. Rev. Lett. 100 013401
[14]	Cassidy D B, Yokoyama K T, Deng S H M, Griscom D L, Miyadera H, Tom H W K, Varma C M, Mills A P Jr 2007 Phys. Rev. B 75 085415
[15]	Zhang T B, Xu M 1990 High Ener. Phys. Nucl. Phys. 14 289 (in Chinese)[张天保、徐敏 1990 高能物理与核物理 14 289]
[16]	Kansy J 1996 Nucl. Instrum. Meth. A 374 235
[17]	Gelloz B, Shibata T, Koshida N 2006 Appl. Phys. Lett. 89 191103
[18]	Dutta D, Ganguly B N, Gangopadhyay D, Mukherjee T, Dutta-Roy B 2004 J. Phys. Chem. B 108 8947
[19]	Itoh Y, Murakami H, Kinoshita A 1994 Hyper. Inter. 84 121
[20]	Wang S J, Chen Z Q, Wang B, Wu Y C, Fang P F, Zhang Y X 2008 Applied Positron Spectroscopy (Wuhan: Hubei Science and Technology Press) p131(in Chinese) [王少阶、陈志权、王波、吴亦初、方鹏飞、张永学 2008 应用正电子谱学(武汉:湖北科学技术出版社)第131页]
[21]	Stesmans A, Afanas’ev V V 1998 J. Appl. Phys. 83 2449
[22]	Stesmans A, Nouwen B, Afanas’ev V V 1998 Phys. Rev. B 58 15801
[23]	Delerue C, Allan G, Lannoo M 1993 Phys. Rev. B 48 10024
[24]	Shinohara N, Suzuki N, Chang T, Hyodo T 2001 Phys. Rev. A 64 042702
[25]	Sato K, Murakami H, Ito K, Hirata K, Kobayashi Y 2009 Mater. Sci. Forum 607 53
[26]	Stesmans A, Scheerlinck F 1994 Phys. Rev. B 50 5204
[27]	Suzuki R, Mikado T, Ohgaki H, Chiwaki M, Yamazaki T 1994 Phys. Rev. B 49 17484
[28]	Gupta P, Colvin V L, George S M 1988 Phys. Rev. B 37 8234
[29]	Robinson M B, Dillon A C, Haynes D R, George S M 1992 Appl. Phys. Lett. 61 1414

施引文献

[1]	Canham L T 1990 Appl. Phys. Lett. 57 1046
[2]	Rahmani M, Moadhen A, Zahi M A, Elhouichet H, Oueslati M 2008 J. Lumin. 128 1763
[3]	Gelloz B, Koshida N 2006 Thin Solid Films 508 406
[4]	Gelloz B, Kojima A, Koshida N 2005 Appl. Phys. Lett. 87 031107
[5]	Qin G G, Li Y J 2003 Phys. Rev. B 68 085309
[6]	Huang W Q, Wang X Y, Zhang R T, Yu S Q, Qin C J 2009 Acta Phys. Sin. 58 4652 (in Chinese)[黄伟奇、王晓允、张荣涛、于示强、秦朝建 2009 物理学报 58 4652]
[7]	Puzder A, Williamson A J, Grossman J C, Galli G 2002 Phys. Rev. Lett. 88 097401
[8]	Hadjisavvas G, Kelires P C 2004 Phys. Rev. Lett. 93 226104
[9]	Godefroo S, Hayne M, Jivanescu M, Stesmans A, Zacharias M, Lebedev O I, Van Tendeloo G, Moshchalkov V V 2008 Nanotechnology 3 174
[10]	Pradeep J A, Agarwal P 2008 J. Appl. Phys. 104 123515
[11]	Lambrecht M, Almazouzi A 2009 J. Nucl. Mater. 385 334
[12]	Wang Z C, Teng M K, Liu Y C 1991 Acta Phys. Sin. 40 1973 (in Chinese)[王志超、藤敏康、刘吟春 1991 物理学报 40 1973]
[13]	Cassidy D B, Mills A P Jr 2008 Phys. Rev. Lett. 100 013401
[14]	Cassidy D B, Yokoyama K T, Deng S H M, Griscom D L, Miyadera H, Tom H W K, Varma C M, Mills A P Jr 2007 Phys. Rev. B 75 085415
[15]	Zhang T B, Xu M 1990 High Ener. Phys. Nucl. Phys. 14 289 (in Chinese)[张天保、徐敏 1990 高能物理与核物理 14 289]
[16]	Kansy J 1996 Nucl. Instrum. Meth. A 374 235
[17]	Gelloz B, Shibata T, Koshida N 2006 Appl. Phys. Lett. 89 191103
[18]	Dutta D, Ganguly B N, Gangopadhyay D, Mukherjee T, Dutta-Roy B 2004 J. Phys. Chem. B 108 8947
[19]	Itoh Y, Murakami H, Kinoshita A 1994 Hyper. Inter. 84 121
[20]	Wang S J, Chen Z Q, Wang B, Wu Y C, Fang P F, Zhang Y X 2008 Applied Positron Spectroscopy (Wuhan: Hubei Science and Technology Press) p131(in Chinese) [王少阶、陈志权、王波、吴亦初、方鹏飞、张永学 2008 应用正电子谱学(武汉:湖北科学技术出版社)第131页]
[21]	Stesmans A, Afanas’ev V V 1998 J. Appl. Phys. 83 2449
[22]	Stesmans A, Nouwen B, Afanas’ev V V 1998 Phys. Rev. B 58 15801
[23]	Delerue C, Allan G, Lannoo M 1993 Phys. Rev. B 48 10024
[24]	Shinohara N, Suzuki N, Chang T, Hyodo T 2001 Phys. Rev. A 64 042702
[25]	Sato K, Murakami H, Ito K, Hirata K, Kobayashi Y 2009 Mater. Sci. Forum 607 53
[26]	Stesmans A, Scheerlinck F 1994 Phys. Rev. B 50 5204
[27]	Suzuki R, Mikado T, Ohgaki H, Chiwaki M, Yamazaki T 1994 Phys. Rev. B 49 17484
[28]	Gupta P, Colvin V L, George S M 1988 Phys. Rev. B 37 8234
[29]	Robinson M B, Dillon A C, Haynes D R, George S M 1992 Appl. Phys. Lett. 61 1414

计量

文章访问数: 7930
PDF下载量: 838
被引次数: 0

姓名
邮箱
手机号码
标题
留言内容
验证码

搜索

留言板