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The transport properties and I-V characteristics of boron-carbon and boron-nitride quantum dot devices are investigated by first principles method. The results of the B-C and B-N devices consisting of the same number of atoms have significant differences. There is large density of states near the Fermi energy for B-C device. A wide gap in the density of states of B-N device exists and the Fermi energy lies in the gap. The B-C device reveals metal property and the B-N devices appear as semiconductors.
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Keywords:
- boron-carbon /
- boron-nitride /
- quantum dot device /
- transport property
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[10] Evans M H, Joannopoulos J D, Pantelides S T 2005 Phys. Rev. B 72 045434
[11] Lau K C, Pandey R 2007 J. Phys. Chem. C 111 2906
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[13] Li G Q 2010 Chin. Phys. B 19 017201
[14] Lowther J E, Zinin P V, Ming L C 2009 Phys. Rev. B 79 033401
[15] Tian W, Datta S 1998 J. Chem. Phys. 109 2874
[16] Zahid F, Paulsson M, Datta S 2003 Electrical Conduction Through Molecules (New York: Academic)
[17] Lide D R 2000 CRC Handbook of Chemistry and Physics ( Boca Raton FL: CRC)
[18] Li G Q, Cai J 2009 Acta Phys. Sin. 58 6453 (in Chinese) [李桂琴、蔡 军 2009 物理学报 58 6453]
[19] Pacilé D, Meyer J C, Girit C , Zettl A 2008 Appl. Phys. Lett. 92 133107
[20] Zhi C, Bando Y, Tang C, Golberg D 2005 Appl. Phys. Lett. 87 063107
[21] Golberg D, Rode A, Bando Y, Mitome M, Gamaly E, Luther-Davies B 2003 Diamond Relat. Mater. 12 1269
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[1] Novoselov K S, Geim A K, Morozov S V, Jiang D, Katsnelson M I, Grigorieva I V, Dubonos S V, Firsov A A 2005 Nature 438 197
[2] Zhang Y, Tan Y W, Stormer H L, Kim P 2005 Nature 438 202
[3] Nomura K, MacDonald A H 2007 Phys. Rev. Lett. 98 076602
[4] Peres N M R, Guinea F, Castro N A H 2006 Phys. Rev. B 73 125411
[5] Andriotis A N, Richter E, Menon M 2007 Appl. Phys. Lett. 91 152105
[6] Li A H, Zhang K W, Meng L J, Li J, Liu W L, Zhong J X 2008 Acta Phys. Sin. 57 4356 (in Chinese) [李爱华、张凯旺、孟利军、李 俊、刘文亮、钟建新 2008 物理学报 57 4356]
[7] Li G Q, Cai J, Deng J K, Rocha A R, Sanvito S 2008 Appl. Phys. Lett. 92 163104
[8] Tan C L, Tan Z B, Ma L, Chen J, Yang F, Qu F M, Liu G T, Yang H F, Yang C L, Lü L 2009 Acta Phys. Sin. 58 5726 (in Chinese) [谭长玲、谭振兵、马 丽、陈 军、杨 帆、屈凡明、刘广同、杨海方、杨昌黎、吕 力 2009 物理学报 58 5726]
[9] Tang H, Ismail-Beigi S 2007 Phys. Rev. Lett. 99 115501
[10] Evans M H, Joannopoulos J D, Pantelides S T 2005 Phys. Rev. B 72 045434
[11] Lau K C, Pandey R 2007 J. Phys. Chem. C 111 2906
[12] Li G Q 2009 Appl. Phys. Lett. 94 193116
[13] Li G Q 2010 Chin. Phys. B 19 017201
[14] Lowther J E, Zinin P V, Ming L C 2009 Phys. Rev. B 79 033401
[15] Tian W, Datta S 1998 J. Chem. Phys. 109 2874
[16] Zahid F, Paulsson M, Datta S 2003 Electrical Conduction Through Molecules (New York: Academic)
[17] Lide D R 2000 CRC Handbook of Chemistry and Physics ( Boca Raton FL: CRC)
[18] Li G Q, Cai J 2009 Acta Phys. Sin. 58 6453 (in Chinese) [李桂琴、蔡 军 2009 物理学报 58 6453]
[19] Pacilé D, Meyer J C, Girit C , Zettl A 2008 Appl. Phys. Lett. 92 133107
[20] Zhi C, Bando Y, Tang C, Golberg D 2005 Appl. Phys. Lett. 87 063107
[21] Golberg D, Rode A, Bando Y, Mitome M, Gamaly E, Luther-Davies B 2003 Diamond Relat. Mater. 12 1269
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