搜索

x

留言板

尊敬的读者、作者、审稿人, 关于本刊的投稿、审稿、编辑和出版的任何问题, 您可以本页添加留言。我们将尽快给您答复。谢谢您的支持!

姓名
邮箱
手机号码
标题
留言内容
验证码

O2流量对磁控溅射N掺杂TiO2薄膜成分及晶体结构的影响

丁万昱 王华林 巨东英 柴卫平

引用本文:
Citation:

O2流量对磁控溅射N掺杂TiO2薄膜成分及晶体结构的影响

丁万昱, 王华林, 巨东英, 柴卫平

Composition and crystal structure of N doped TiO2 film deposited with different O2 flow rates

Ju Dong-Ying, Ding Wan-Yu, Chai Wei-Ping, Wang Hua-Lin
PDF
导出引用
  • 利用直流脉冲磁控溅射方法在室温下通过改变O2流量制备具有不同晶体结构的N掺杂TiO2薄膜,利用台阶仪、X射线光电子能谱仪、X射线衍射仪、紫外-可见分光光度计等设备对薄膜沉积速率、化学成分、晶体结构、禁带宽度等进行分析.结果表明:所制备的薄膜元素配比约为TiO1.68±0.06N0.11±0.01,N为替位掺杂,所有样品退火前后均未形成Ti—N相结构,N掺杂TiO2薄膜的沉积速率、晶体结构等主要依赖于O2流量.在O2流量为2 sccm时,N掺杂TiO2薄膜沉积速率相对较高,薄膜为非晶态结构,但薄膜内含有锐钛矿(anatase)和金红石(rutile)相晶核,退火后薄膜呈anatase和rutile相混合结构,禁带宽度仅为2.86 eV.随着O2流量的增加,薄膜沉积速率单调下降,退火后样品禁带宽度逐渐增加.当O2流量为12 sccm时,薄膜为anatase相择优生长,退火后呈anatase相结构,禁带宽度为3.2 eV.综合本实验的分析结果,要在室温条件下制备晶态N掺杂TiO2薄膜,需在高O2流量(>10 sccn)条件下制备.
    N doped TiO2 films were deposited in direct current pulsed magnetron sputtering system at room temperature. We have studied the influence of O2 flow rate on the crystal structure of deposited films by using stylus profilometer, X-ray photoelectron spectroscope, X-ray diffractometer, and ultraviolet-visible spectrophotometer. The results indicate that the growth behavior and crystal structure of N doped TiO2 film is dominated by the O2 flow rate. It was found that the chemical stiochiometry is close to TiO1.68±0.06N0.11±0.01 for all film samples, in which the N mainly exists in substitutional doped state. When O2 flow rate is 2 sccm (1 sccm=1 mL/min), N doped TiO2 film has amorphous structure with high growth rate, which contains both anatase phase and rutile phase crystal nucleuses. In this case, the film displays the mix-phase of anatase and rutile and the band gap is 2.86eV after annealing treatment. The film growth rate decreases with increasing O2 flow rate. After annealing treatment, the band gap of N doped TiO2 films decreases with increasing O2 flow rate. While N doped TiO2 film is anatase phase when O2 flow rate is 12sccm. In this case, the band gap is 3.2eV after annealing treatment. It should be noticed that no TiN phase appears for all samples before and after annealing treatment.
    • 基金项目: 大连理工大学三束材料改性教育部重点实验室开放课题(批准号:DP1050901)资助的课题.
    [1]

    Fujishima A, Honda K 1972 Nature 37 238

    [2]

    Wasielewski R, Domaradzki J, Wojcieszak D, Kaczmarek D, Borkowska A, Prociow E L, Ciszewski A 2008 Appl. Surf. Sci. 254 4396

    [3]

    Press) p73 (in Chinese)[菅井秀郎 2002 等离子体电子工程学 (北京:科学出版社)]

    [4]

    Solid Films 516 1434

    [5]

    Borrás A, Yanguas-Gil A, Barranco A, Cotrino A, González-Elipe A R 2007 Phys. Rev. B 76 235303

    [6]

    Tavares C J, Marques S M, Lanceros-Méndez S, Sencadas V, Teixeira V, Carneiro J O, Martins A J, Fernandes A J 2008 Thin

    [7]

    Hu L H, Dai J, Liu W Q, Wang K J, Dai S Y 2009 Acta Phys. Sin. 58 1115 (in Chinese)[胡林华、戴 俊、刘伟庆、王孔嘉、戴松元2009 物理学报 58 1115]

    [8]

    Shah I, Li W, Huang CP, Jung O, Ni C 2002 Proc. Natl. Acad. Sci. U. S. A. 99 6482

    [9]

    Li W, Frenkel A I, Woicik J C, Ni C, Shah S I 2005 Phys. Rev. B 72 155315

    [10]

    Asahi R, Morikawa T, Ohwaki T, Aoki K, Taga Y 2001 Science 293 269

    [11]

    Tavares C J, Marques S M, Viseu T, Teixeira V, Carneiro J O, Alves E, Barradas N P, Munnik F, Girardeau T, Rivière J P 2009 J. Appl. Phys. 106 113535

    [12]

    Sui R H, Young J L, Berlinguette C P 2010 J. Mater. Chem. 20 498

    [13]

    Yasunori T 2009 Thin Solid Films 517 3167

    [14]

    Tomás S A, Luna-Resendis A, Cortés-Cuautli L C, Jacinto D 2009 Thin Solid Films 518 1337

    [15]

    Ding W Y, Wang H L, Miao Z, Zhang J J, Chai W P 2009 Acta Phys. Sin. 58 432 (in Chinese)[丁万昱、王华林、苗 壮、张俊计、柴卫平2009 物理学报 58 432]

    [16]

    Zhang C, Ding W Y, Wang H L, Chai W P, Ju D Y 2008 J. Environ. Sci. 21 741

    [17]

    Tang W Z 2003 The Theory and Technology of the Thin Film Production (Beijing: Melallurgical Industry Press)(in Chinese) [唐伟忠 2003 薄膜材料制备原理、技术及应用 (北京: 冶金工业出版社)]

    [18]

    Sugai H 2002 Plasma Electronic Engineering (Beijing: Science

    [19]

    Wang J Y 1993 The Theory of Film Growth (Wuhan: Huazhong University of Science and Technology Press) (in Chinese)[王敬义 1993 薄膜生长理论 (武汉:华中理工大学出版社)]

    [20]

    Moulder J F, Stickle W F, Sobol P E, Bomben K D 1995 Handbook of X-ray Photoelectron Spectroscopy (Minnesota: Physical Electronics Inc. )

    [21]

    Ding W Y 2007 Ph. D. Dissertation (Dalian: Dalian University of Technology) (in Chinese) [丁万昱 2007 博士学位论文 (大连:大连理工大学)]

    [22]

    Ding W Y, Xu J, Lu W Q, Deng X L, Dong C 2009 Phys. Plasmas 16 053502

    [23]

    Ding W Y, Xu J, Lu W Q, Deng X L, Dong C 2010 Thin Solid Films 518 2077

    [24]

    PCPDFWIN card number: 00-021-1272 (Version 2.1, Copyright 2000)

    [25]

    PCPDFWIN card number: 00-021-1276 (Version 2.1, Copyright 2000)

    [26]

    Meng L J, Andritschky M, Santos dos M P 1993 Thin Solid Films 223 242

    [27]

    Hagfeldtt A, Gratzel M 1995 Chem. Rev. 95 49

    [28]

    Tauc J 1966 Physica Status Solidi B 15 627

    [29]

    Xu L, Tang C Q, Dai L, Tang D H, Ma X G 2007 Acta Phys. Sin. 56 1048 (in Chinese)[徐 凌、唐超群、戴 磊、唐代海、马新国2007 物理学报 56 1048]

    [30]

    PengL P, Xu L, Yin J W 2007 Acta Phys. Sin. 56 1585 (in Chinese)[彭丽萍、徐 凌、尹建武2007 物理学报 56 1585]

  • [1]

    Fujishima A, Honda K 1972 Nature 37 238

    [2]

    Wasielewski R, Domaradzki J, Wojcieszak D, Kaczmarek D, Borkowska A, Prociow E L, Ciszewski A 2008 Appl. Surf. Sci. 254 4396

    [3]

    Press) p73 (in Chinese)[菅井秀郎 2002 等离子体电子工程学 (北京:科学出版社)]

    [4]

    Solid Films 516 1434

    [5]

    Borrás A, Yanguas-Gil A, Barranco A, Cotrino A, González-Elipe A R 2007 Phys. Rev. B 76 235303

    [6]

    Tavares C J, Marques S M, Lanceros-Méndez S, Sencadas V, Teixeira V, Carneiro J O, Martins A J, Fernandes A J 2008 Thin

    [7]

    Hu L H, Dai J, Liu W Q, Wang K J, Dai S Y 2009 Acta Phys. Sin. 58 1115 (in Chinese)[胡林华、戴 俊、刘伟庆、王孔嘉、戴松元2009 物理学报 58 1115]

    [8]

    Shah I, Li W, Huang CP, Jung O, Ni C 2002 Proc. Natl. Acad. Sci. U. S. A. 99 6482

    [9]

    Li W, Frenkel A I, Woicik J C, Ni C, Shah S I 2005 Phys. Rev. B 72 155315

    [10]

    Asahi R, Morikawa T, Ohwaki T, Aoki K, Taga Y 2001 Science 293 269

    [11]

    Tavares C J, Marques S M, Viseu T, Teixeira V, Carneiro J O, Alves E, Barradas N P, Munnik F, Girardeau T, Rivière J P 2009 J. Appl. Phys. 106 113535

    [12]

    Sui R H, Young J L, Berlinguette C P 2010 J. Mater. Chem. 20 498

    [13]

    Yasunori T 2009 Thin Solid Films 517 3167

    [14]

    Tomás S A, Luna-Resendis A, Cortés-Cuautli L C, Jacinto D 2009 Thin Solid Films 518 1337

    [15]

    Ding W Y, Wang H L, Miao Z, Zhang J J, Chai W P 2009 Acta Phys. Sin. 58 432 (in Chinese)[丁万昱、王华林、苗 壮、张俊计、柴卫平2009 物理学报 58 432]

    [16]

    Zhang C, Ding W Y, Wang H L, Chai W P, Ju D Y 2008 J. Environ. Sci. 21 741

    [17]

    Tang W Z 2003 The Theory and Technology of the Thin Film Production (Beijing: Melallurgical Industry Press)(in Chinese) [唐伟忠 2003 薄膜材料制备原理、技术及应用 (北京: 冶金工业出版社)]

    [18]

    Sugai H 2002 Plasma Electronic Engineering (Beijing: Science

    [19]

    Wang J Y 1993 The Theory of Film Growth (Wuhan: Huazhong University of Science and Technology Press) (in Chinese)[王敬义 1993 薄膜生长理论 (武汉:华中理工大学出版社)]

    [20]

    Moulder J F, Stickle W F, Sobol P E, Bomben K D 1995 Handbook of X-ray Photoelectron Spectroscopy (Minnesota: Physical Electronics Inc. )

    [21]

    Ding W Y 2007 Ph. D. Dissertation (Dalian: Dalian University of Technology) (in Chinese) [丁万昱 2007 博士学位论文 (大连:大连理工大学)]

    [22]

    Ding W Y, Xu J, Lu W Q, Deng X L, Dong C 2009 Phys. Plasmas 16 053502

    [23]

    Ding W Y, Xu J, Lu W Q, Deng X L, Dong C 2010 Thin Solid Films 518 2077

    [24]

    PCPDFWIN card number: 00-021-1272 (Version 2.1, Copyright 2000)

    [25]

    PCPDFWIN card number: 00-021-1276 (Version 2.1, Copyright 2000)

    [26]

    Meng L J, Andritschky M, Santos dos M P 1993 Thin Solid Films 223 242

    [27]

    Hagfeldtt A, Gratzel M 1995 Chem. Rev. 95 49

    [28]

    Tauc J 1966 Physica Status Solidi B 15 627

    [29]

    Xu L, Tang C Q, Dai L, Tang D H, Ma X G 2007 Acta Phys. Sin. 56 1048 (in Chinese)[徐 凌、唐超群、戴 磊、唐代海、马新国2007 物理学报 56 1048]

    [30]

    PengL P, Xu L, Yin J W 2007 Acta Phys. Sin. 56 1585 (in Chinese)[彭丽萍、徐 凌、尹建武2007 物理学报 56 1585]

  • [1] 陈明, 周细应, 毛秀娟, 邵佳佳, 杨国良. 外加磁场对射频磁控溅射制备铝掺杂氧化锌薄膜影响的研究. 物理学报, 2014, 63(9): 098103. doi: 10.7498/aps.63.098103
    [2] 马海林, 苏庆. 氧分压对溅射制备氧化镓薄膜结构及光学带隙的影响. 物理学报, 2014, 63(11): 116701. doi: 10.7498/aps.63.116701
    [3] 江强, 毛秀娟, 周细应, 苌文龙, 邵佳佳, 陈明. 外加磁场对磁控溅射制备氮化硅陷光薄膜的影响. 物理学报, 2013, 62(11): 118103. doi: 10.7498/aps.62.118103
    [4] 张传军, 邬云骅, 曹鸿, 高艳卿, 赵守仁, 王善力, 褚君浩. 不同衬底和CdCl2退火对磁控溅射CdS薄膜性能的影响. 物理学报, 2013, 62(15): 158107. doi: 10.7498/aps.62.158107
    [5] 佟国香, 李毅, 王锋, 黄毅泽, 方宝英, 王晓华, 朱慧群, 梁倩, 严梦, 覃源, 丁杰, 陈少娟, 陈建坤, 郑鸿柱, 袁文瑞. 磁控溅射制备W掺杂VO2/FTO复合薄膜及其性能分析. 物理学报, 2013, 62(20): 208102. doi: 10.7498/aps.62.208102
    [6] 杨铎, 钟宁, 尚海龙, 孙士阳, 李戈扬. 磁控溅射(Ti, N)/Al纳米复合薄膜的微结构和力学性能. 物理学报, 2013, 62(3): 036801. doi: 10.7498/aps.62.036801
    [7] 苏元军, 徐军, 朱明, 范鹏辉, 董闯. 利用等离子体辅助脉冲磁控溅射实现多晶硅薄膜的低温沉积. 物理学报, 2012, 61(2): 028104. doi: 10.7498/aps.61.028104
    [8] 胡艳春, 王艳文, 张克磊, 王海英, 马恒, 路庆凤. 空穴掺杂Sr2FeMoO6的晶体结构及磁性研究. 物理学报, 2012, 61(22): 226101. doi: 10.7498/aps.61.226101
    [9] 张贺, 骆军, 朱航天, 刘泉林, 梁敬魁, 饶光辉. Cu掺杂AgSbTe2化合物的相稳定、晶体结构及热电性能. 物理学报, 2012, 61(8): 086101. doi: 10.7498/aps.61.086101
    [10] 李林娜, 陈新亮, 王斐, 孙建, 张德坤, 耿新华, 赵颖. H2 气对脉冲磁控溅射铝掺杂氧化锌薄膜性能的影响. 物理学报, 2011, 60(6): 067304. doi: 10.7498/aps.60.067304
    [11] 曹月华, 狄国庆. 磁控溅射制备Y2O3-TiO2薄膜形貌的研究. 物理学报, 2011, 60(3): 037702. doi: 10.7498/aps.60.037702
    [12] 任树洋, 任忠鸣, 任维丽, 操光辉. 3 T强磁场对真空蒸发Zn薄膜晶体结构的影响. 物理学报, 2009, 58(8): 5567-5571. doi: 10.7498/aps.58.5567
    [13] 丁万昱, 徐军, 陆文琪, 邓新绿, 董闯. 微波ECR磁控溅射制备SiNx薄膜的XPS结构研究. 物理学报, 2009, 58(6): 4109-4116. doi: 10.7498/aps.58.4109
    [14] 刘 峰, 孟月东, 任兆杏, 舒兴胜. 感应耦合等离子体增强射频磁控溅射沉积ZrN薄膜及其性能研究. 物理学报, 2008, 57(3): 1796-1801. doi: 10.7498/aps.57.1796
    [15] 张 辉, 刘应书, 刘文海, 王宝义, 魏 龙. 基片温度与氧分压对磁控溅射制备氧化钒薄膜的影响. 物理学报, 2007, 56(12): 7255-7261. doi: 10.7498/aps.56.7255
    [16] 胡 冰, 李晓娜, 董 闯, 姜 辛. 磁控溅射法合成纳米β-FeSi2/a-Si多层结构. 物理学报, 2007, 56(12): 7188-7194. doi: 10.7498/aps.56.7188
    [17] 刘志文, 谷建峰, 孙成伟, 张庆瑜. 磁控溅射ZnO薄膜的成核机制及表面形貌演化动力学研究. 物理学报, 2006, 55(4): 1965-1973. doi: 10.7498/aps.55.1965
    [18] 丁万昱, 徐 军, 李艳琴, 朴 勇, 高 鹏, 邓新绿, 董 闯. 微波ECR等离子体增强磁控溅射制备SiNx薄膜及其性能分析. 物理学报, 2006, 55(3): 1363-1368. doi: 10.7498/aps.55.1363
    [19] 周小莉, 杜丕一. 磁控溅射法制备的CaCu3Ti4O12薄膜. 物理学报, 2005, 54(4): 1809-1813. doi: 10.7498/aps.54.1809
    [20] 马平, 刘乐园, 张升原, 王昕, 谢飞翔, 邓鹏, 聂瑞娟, 王守证, 戴远东, 王福仁. 直流磁控溅射一步法原位制备MgB2超导薄膜. 物理学报, 2002, 51(2): 406-409. doi: 10.7498/aps.51.406
计量
  • 文章访问数:  6237
  • PDF下载量:  858
  • 被引次数: 0
出版历程
  • 收稿日期:  2010-04-01
  • 修回日期:  2010-05-24
  • 刊出日期:  2011-01-05

O2流量对磁控溅射N掺杂TiO2薄膜成分及晶体结构的影响

  • 1. (1)大连交通大学材料科学与工程学院,辽宁省教育厅光电材料与器件工程研究中心,大连 116028; (2)埼玉工业大学材料科学与工程学院,日本 埼玉 369-0293
    基金项目: 大连理工大学三束材料改性教育部重点实验室开放课题(批准号:DP1050901)资助的课题.

摘要: 利用直流脉冲磁控溅射方法在室温下通过改变O2流量制备具有不同晶体结构的N掺杂TiO2薄膜,利用台阶仪、X射线光电子能谱仪、X射线衍射仪、紫外-可见分光光度计等设备对薄膜沉积速率、化学成分、晶体结构、禁带宽度等进行分析.结果表明:所制备的薄膜元素配比约为TiO1.68±0.06N0.11±0.01,N为替位掺杂,所有样品退火前后均未形成Ti—N相结构,N掺杂TiO2薄膜的沉积速率、晶体结构等主要依赖于O2流量.在O2流量为2 sccm时,N掺杂TiO2薄膜沉积速率相对较高,薄膜为非晶态结构,但薄膜内含有锐钛矿(anatase)和金红石(rutile)相晶核,退火后薄膜呈anatase和rutile相混合结构,禁带宽度仅为2.86 eV.随着O2流量的增加,薄膜沉积速率单调下降,退火后样品禁带宽度逐渐增加.当O2流量为12 sccm时,薄膜为anatase相择优生长,退火后呈anatase相结构,禁带宽度为3.2 eV.综合本实验的分析结果,要在室温条件下制备晶态N掺杂TiO2薄膜,需在高O2流量(>10 sccn)条件下制备.

English Abstract

参考文献 (30)

目录

    /

    返回文章
    返回