基于双电源电压和双阈值电压的全局互连性能优化

董刚; 刘嘉; 薛萌; 杨银堂

doi:10.7498/aps.60.046602

摘要

基于双电源电压和双阈值电压技术,提出了一种优化全局互连性能的新方法.文中首先定义了一个包含互连延时、带宽和功耗等因素的品质因子用以描述全局互连特性,然后在给定延时牺牲的前提下,通过最大化品质因子求得优化的双电压数值用以节省功耗.仿真结果显示,在65 nm工艺下,针对5%,10%和20%的允许牺牲延时,所提方法相较于单电压方法可分别获得27.8%,40.3%和56.9%的功耗节省.同时发现,随着工艺进步,功耗节省更加明显.该方法可用于高性能全局互连的优化和设计.

关键词:

Abstract

Based on dual supply and dual threshold voltages technique, a novel methodology optimizing global interconnect performance in presented in this paper. The new figure of merit (FOM) is first defined as a function of bandwidth, delay and power consumption of global interconnect. Then, the optimal dual voltages can be obtained to save interconnect power by maximizing FOM function within a given delay penalty. Simulations show that in 65 nm technology, for the allowed delay penalties of 5%, 10% and 20%, the proposed methodology saves 27.8%, 40.3% and 56.9% power compared with the case with single supply and single threshold voltages, respectively. It can also be found that more power savings are achieved with the technology improving. The proposed methodology can be used to design and optimize global interconnects.

Keywords:

作者及机构信息

1.
西安电子科技大学微电子所宽禁带半导体材料与器件教育部重点实验室,西安 710071

基金项目: 国家自然科学基金(批准号:60606006),国家杰出青年基金(批准号:60725415)和西安电子科技大学基本科研业务费资助的课题.

Authors and contacts

1.
Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices,Microelectronics Institute, Xidian University, Xi'an 710071

参考文献

[1]	Wang J P, Hao Y 2009 Acta Phys. Sin. 58 4267 (in Chinese) [王俊平、郝跃 2009 物理学报 58 4267]
[2]	Li X, Wang J M, Tang W Q 2009 Acta Phys. Sin. 58 3603 (in Chinese) [李鑫、Janet M Wang、唐卫清 2009 物理学报 58 3603]
[3]	Zhu Z M, Qian L B, Yang Y T 2009 Acta Phys. Sin. 58 2631 (in Chinese) [朱樟明、钱利波、杨银堂 2009 物理学报 58 2631]
[4]	Li X C, Mao J F, Huang H F, Liu Y 2005 IEEE Transactions on Electron Devices 52 2272
[5]	Zhu Z M, Qian L B, Yang Y T 2009 Chin. Phys. B 18 1188
[6]	Banerjee K, Mehrotra A 2002 IEEE Transactions on Electron Devices 49 2001
[7]	Naeemi A, Venkatesan R, Meindl J D 2004 IEEE Transactions on Electron Devices 51 980
[8]	Mui M L, Banerjee K, Mehrotra A 2004 IEEE Transactions on Electron Devices 51 195
[9]	Zhu Z M, Hao B T, Li R, Yang Y T 2010 Acta Phys. Sin. 59 1997 (in Chinese) [朱樟明、郝报田、李儒、杨银堂 2010 物理学报 59 1997]
[10]	Ku J C, Ismail Y 2007 IEEE Transactions on VLSI Systems 15 963
[11]	Zhu Z M, Zhong B, Hao B T, Yang Y T 2009 Acta Phys. Sin. 58 7124 (in Chinese) [朱樟明、钟波、郝报田、杨银堂 2009 物理学报 58 7124]
[12]	Tam K H, Hu Y, He L 2008 IEEE Transactions on Computer Aided Design of Integrated Circuits and Systems 27 1498
[13]	Chang Y C, Tam K H, He L 2005 Proc. ISLPED, San Diego, USA, August 8—10, p137
[14]	Diril A U, Dhillon Y S, Chatterjee A, Singh A D 2005 IEEE Transactions on VLSI Systems 13 1103
[15]	Bakoglu H B, Circuits, Interconnections and Packaging for VLSI. Reading, MA: Addison-Wesley, 1990
[16]	Chen G, Friedman E Proc.International ASJC/SOC Conference, Santa Clara, USA, September 12—15, p335
[17]	Wong S C, Lee G Y, Ma D J 2000 IEEE Transactions on Semiconductor Manufacturing 13 108
[18]	Kim K K, Kim Y B 2009 IEEE Transactions on VLSI Systems 17 517
[19]	Amelifard B, Fallah F, Pedram M 2008 IEEE Transactions on VLSI Systems 16 851

施引文献

[1]	Wang J P, Hao Y 2009 Acta Phys. Sin. 58 4267 (in Chinese) [王俊平、郝跃 2009 物理学报 58 4267]
[2]	Li X, Wang J M, Tang W Q 2009 Acta Phys. Sin. 58 3603 (in Chinese) [李鑫、Janet M Wang、唐卫清 2009 物理学报 58 3603]
[3]	Zhu Z M, Qian L B, Yang Y T 2009 Acta Phys. Sin. 58 2631 (in Chinese) [朱樟明、钱利波、杨银堂 2009 物理学报 58 2631]
[4]	Li X C, Mao J F, Huang H F, Liu Y 2005 IEEE Transactions on Electron Devices 52 2272
[5]	Zhu Z M, Qian L B, Yang Y T 2009 Chin. Phys. B 18 1188
[6]	Banerjee K, Mehrotra A 2002 IEEE Transactions on Electron Devices 49 2001
[7]	Naeemi A, Venkatesan R, Meindl J D 2004 IEEE Transactions on Electron Devices 51 980
[8]	Mui M L, Banerjee K, Mehrotra A 2004 IEEE Transactions on Electron Devices 51 195
[9]	Zhu Z M, Hao B T, Li R, Yang Y T 2010 Acta Phys. Sin. 59 1997 (in Chinese) [朱樟明、郝报田、李儒、杨银堂 2010 物理学报 59 1997]
[10]	Ku J C, Ismail Y 2007 IEEE Transactions on VLSI Systems 15 963
[11]	Zhu Z M, Zhong B, Hao B T, Yang Y T 2009 Acta Phys. Sin. 58 7124 (in Chinese) [朱樟明、钟波、郝报田、杨银堂 2009 物理学报 58 7124]
[12]	Tam K H, Hu Y, He L 2008 IEEE Transactions on Computer Aided Design of Integrated Circuits and Systems 27 1498
[13]	Chang Y C, Tam K H, He L 2005 Proc. ISLPED, San Diego, USA, August 8—10, p137
[14]	Diril A U, Dhillon Y S, Chatterjee A, Singh A D 2005 IEEE Transactions on VLSI Systems 13 1103
[15]	Bakoglu H B, Circuits, Interconnections and Packaging for VLSI. Reading, MA: Addison-Wesley, 1990
[16]	Chen G, Friedman E Proc.International ASJC/SOC Conference, Santa Clara, USA, September 12—15, p335
[17]	Wong S C, Lee G Y, Ma D J 2000 IEEE Transactions on Semiconductor Manufacturing 13 108
[18]	Kim K K, Kim Y B 2009 IEEE Transactions on VLSI Systems 17 517
[19]	Amelifard B, Fallah F, Pedram M 2008 IEEE Transactions on VLSI Systems 16 851

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