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复合薄膜NiFe2 O4-BiFeO3 中的磁电耦合

顾建军 刘力虎 岂云开 徐芹 张惠敏 孙会元

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复合薄膜NiFe2 O4-BiFeO3 中的磁电耦合

顾建军, 刘力虎, 岂云开, 徐芹, 张惠敏, 孙会元

Magnetoelectric coupling in NiFe2 O4-BiFeO3 composite films

Gu Jian-Jun, Liu Li-Hu, Qi Yun-Kai, Xu Qin, Zhang Hui-Min, Sun Hui-Yuan
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  • 采用化学溶液沉积法(CSD)在Au/Ti/SiO2/Si衬底上通过自组装生长制备了BiFeO3-NiFe2O4 (BFO-NFO)多铁性复合薄膜.X射线衍射图谱(XRD)显示形成了分离的钙钛矿结构的铁电相BFO和尖晶石结构的铁磁相NFO. NFO的引入导致复合薄膜的泄漏电流减小,剩余极化强度增加.相比于纯BFO薄膜,0.25NFO-0.75BFO样品泄漏电流下降了约两个数量级,剩余极化强度( M
    Multiferroic xNFO-(1-x)BFO (x =0.00 0.10, 0.15, 0.20, 0.25) composite films are prepared through self-assembling growth on Au/Ti/SiO2/Si substrates by chemical solution deposition (CSD). X-ray diffraction analysis shows that the perovskite BiFeO3 and the spinel structured NiFe2O4 phases are formed and separated. The leakage current density (J) in the film decreases and the remnant polarizations (M r) increases with the introduction of NFO. The value of J in 0.25NFO—0.75BFO film is found to be nearly two orders of magnitude lower than that in the BFO film, and the M r and the saturation magnetization ( M s) reach maxima, i.e. 2.3μC/cm2 and 70.2 kA·m-1, respectively. Therefore, from the calculation for magnetic moment of NFO we can conjecture that magnetoelectric coupling exists in the composite films.
    • 基金项目: 河北省自然科学基金 (批准号:A2009000254)、河北民族师范学院博士基金(批准号:201003)和河北师范大学博士基金(批准号:L2006B10) 资助的课题.
    [1]

    Wood V E, Austin A E 1974 Int. J. Magn. 5 303

    [2]

    Wang J, Neaton J B, Zheng H, Nagarajan V, Ogale S B, Liu B, Viehland D, Vaithyanathan V, Schlom D G, Waghmare U V, Spaldin N A, Rabe K M, Wuttig M, Ramesh R 2003 Science 299 1719

    [3]

    Zavaliche F, Zheng H, Mohaddes-Ardabili L, Yang S Y, Zhan Q, Shafer P, Reilly E, Chopdekar R, Jia Y, Wright P, Schlom D G, Suzuki Y, Ramesh R 2005 Nano Lett. 5 1793

    [4]

    Dix N, Muralidharan R, Caicedo J M, Hrabovsky D, Fina I, Fabrega L, Skumryev V, Varela M, Guyonnet J, Paruch P, Sanchez F, Fontcuberta J 2009 J. Magn. Magn. Mater. 321 1790

    [5]

    Zheng H, Straub F, Zhan Q, Yang P L, Hsieh W K, Zavaliche F, Chu Y H, Dahmen U, Ramesh R 2006 Adv. Mater. 18 2747

    [6]

    Kanamadi C M, Kim J S, Yang H K 2009 J. Alloys Compd. 481 781

    [7]

    Dix N, Muralidharan R, Guyonnet J, Warot-Fonrose B, Varela M, Paruch P, Snchez F, Fontcuberta J 2009 Appl. Phys. Lett. 95 062907.

    [8]

    Liu X M, Fu S Y, Huang C J 2005 Mater. Sci. Eng B 121 255

    [9]

    Smolenskii G A, Chupis I E 1982 Sov. Phys. Usp. 25 475

    [10]

    Sun Y, Huang Z F, Fan H G, Ming X, Wang C Z, Chen G 2009 Acta Phys. Sin. 58 193(in Chinese)[孙 源、黄祖飞、范厚刚、明 星、王春忠、陈 岗 2009 物理学报58 193]

    [11]

    Schwartz R W, Schneller T, Waser R 2004 C. R. Chimie. 7 433

    [12]

    Garino T J, Harrington M, Kingon A I, Myers E R, Tuttle B 1992 Mater. Res. Soc. Symp. Proc. 243 341

    [13]

    Zheng H, Zhan Q, Zavaliche F, Sherburne M, Straub F, Cruz M P, Chen L, Dahmen U, Ramesh R 2006 Nano Lett. 6 1401

    [14]

    Zavaliche F, Yang S Y, Shafer P, Ramesh R, Das R R, Kim D M, Eom C B 2005 Appl. Phys. Lett. 87 182912.

    [15]

    Zhong C G, Jiang Q, Fang J H, Ge C W 2009 Acta Phys. Sin. 58 3491(in Chinese)[仲崇贵、蒋 青、方靖淮、葛存旺 2009 物理学报 58 3491]

    [16]

    Ruette B, Zvyagin S, Pyatakov A P, Bush A, Li J F , Belotelov V I, Zvezdin A K, Viehland D 2004 Phys. Rev. B 69 064114

    [17]

    Zhang S T, Ding L Y, Lu M H, Luo Z L 2008 Solid State Commun. 148 420

    [18]

    Zhang Z T, Rondinone A J, Ma J X, Shen J, Dai S 2005 Adv. Mater. 17 1415

    [19]

    Kinemuchi Y, Ishizaka K, Suematsu H, Jiang W, Yatsui K 2002 Thin Solid Films 407 109

    [20]

    Park T J, Papaefthymiou G C, Viescas A J, Moodenbaugh A R, Wong S S 2007 Nano Lett. 7 766

    [21]

    Zhang H, Kajiyoshi K 2010 J. Am. Ceram. Soc. 93 3842

    [22]

    Kumar M, Yadav K L 2007 J. Phys. Chem. Solids 68 1791

    [23]

    Sun P N, Cui L, Lü T Q 2009 Chin. Phys. B 18 1658

  • [1]

    Wood V E, Austin A E 1974 Int. J. Magn. 5 303

    [2]

    Wang J, Neaton J B, Zheng H, Nagarajan V, Ogale S B, Liu B, Viehland D, Vaithyanathan V, Schlom D G, Waghmare U V, Spaldin N A, Rabe K M, Wuttig M, Ramesh R 2003 Science 299 1719

    [3]

    Zavaliche F, Zheng H, Mohaddes-Ardabili L, Yang S Y, Zhan Q, Shafer P, Reilly E, Chopdekar R, Jia Y, Wright P, Schlom D G, Suzuki Y, Ramesh R 2005 Nano Lett. 5 1793

    [4]

    Dix N, Muralidharan R, Caicedo J M, Hrabovsky D, Fina I, Fabrega L, Skumryev V, Varela M, Guyonnet J, Paruch P, Sanchez F, Fontcuberta J 2009 J. Magn. Magn. Mater. 321 1790

    [5]

    Zheng H, Straub F, Zhan Q, Yang P L, Hsieh W K, Zavaliche F, Chu Y H, Dahmen U, Ramesh R 2006 Adv. Mater. 18 2747

    [6]

    Kanamadi C M, Kim J S, Yang H K 2009 J. Alloys Compd. 481 781

    [7]

    Dix N, Muralidharan R, Guyonnet J, Warot-Fonrose B, Varela M, Paruch P, Snchez F, Fontcuberta J 2009 Appl. Phys. Lett. 95 062907.

    [8]

    Liu X M, Fu S Y, Huang C J 2005 Mater. Sci. Eng B 121 255

    [9]

    Smolenskii G A, Chupis I E 1982 Sov. Phys. Usp. 25 475

    [10]

    Sun Y, Huang Z F, Fan H G, Ming X, Wang C Z, Chen G 2009 Acta Phys. Sin. 58 193(in Chinese)[孙 源、黄祖飞、范厚刚、明 星、王春忠、陈 岗 2009 物理学报58 193]

    [11]

    Schwartz R W, Schneller T, Waser R 2004 C. R. Chimie. 7 433

    [12]

    Garino T J, Harrington M, Kingon A I, Myers E R, Tuttle B 1992 Mater. Res. Soc. Symp. Proc. 243 341

    [13]

    Zheng H, Zhan Q, Zavaliche F, Sherburne M, Straub F, Cruz M P, Chen L, Dahmen U, Ramesh R 2006 Nano Lett. 6 1401

    [14]

    Zavaliche F, Yang S Y, Shafer P, Ramesh R, Das R R, Kim D M, Eom C B 2005 Appl. Phys. Lett. 87 182912.

    [15]

    Zhong C G, Jiang Q, Fang J H, Ge C W 2009 Acta Phys. Sin. 58 3491(in Chinese)[仲崇贵、蒋 青、方靖淮、葛存旺 2009 物理学报 58 3491]

    [16]

    Ruette B, Zvyagin S, Pyatakov A P, Bush A, Li J F , Belotelov V I, Zvezdin A K, Viehland D 2004 Phys. Rev. B 69 064114

    [17]

    Zhang S T, Ding L Y, Lu M H, Luo Z L 2008 Solid State Commun. 148 420

    [18]

    Zhang Z T, Rondinone A J, Ma J X, Shen J, Dai S 2005 Adv. Mater. 17 1415

    [19]

    Kinemuchi Y, Ishizaka K, Suematsu H, Jiang W, Yatsui K 2002 Thin Solid Films 407 109

    [20]

    Park T J, Papaefthymiou G C, Viescas A J, Moodenbaugh A R, Wong S S 2007 Nano Lett. 7 766

    [21]

    Zhang H, Kajiyoshi K 2010 J. Am. Ceram. Soc. 93 3842

    [22]

    Kumar M, Yadav K L 2007 J. Phys. Chem. Solids 68 1791

    [23]

    Sun P N, Cui L, Lü T Q 2009 Chin. Phys. B 18 1658

计量
  • 文章访问数:  5102
  • PDF下载量:  1728
  • 被引次数: 0
出版历程
  • 收稿日期:  2011-01-03
  • 修回日期:  2011-02-21
  • 刊出日期:  2011-03-05

复合薄膜NiFe2 O4-BiFeO3 中的磁电耦合

  • 1. (1)河北师范大学物理科学与信息工程学院, 石家庄 050016;河北民族师范学院物理系, 承德 067000; (2)河北师范大学物理科学与信息工程学院, 石家庄 050016;河北民族师范学院物理系, 承德 067000;河北省新型薄膜材料重点实验室, 石家庄 050016; (3)河北师范大学物理科学与信息工程学院, 石家庄 050016;河北省新型薄膜材料重点实验室, 石家庄 050016
    基金项目: 

    河北省自然科学基金 (批准号:A2009000254)、河北民族师范学院博士基金(批准号:201003)和河北师范大学博士基金(批准号:L2006B10) 资助的课题.

摘要: 采用化学溶液沉积法(CSD)在Au/Ti/SiO2/Si衬底上通过自组装生长制备了BiFeO3-NiFe2O4 (BFO-NFO)多铁性复合薄膜.X射线衍射图谱(XRD)显示形成了分离的钙钛矿结构的铁电相BFO和尖晶石结构的铁磁相NFO. NFO的引入导致复合薄膜的泄漏电流减小,剩余极化强度增加.相比于纯BFO薄膜,0.25NFO-0.75BFO样品泄漏电流下降了约两个数量级,剩余极化强度( M

English Abstract

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