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高分辨电子显微镜研究α-Si3N4晶格缺陷

温树林 冯景伟

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高分辨电子显微镜研究α-Si3N4晶格缺陷

温树林, 冯景伟

LATTICE DEFECTS IN α-Si3N4 STUDIED BY HREM

WEN SHU-LIN, FENG JING-WEI
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  • 对于用MgO和LiF作为添加剂以热压法制备的α-Si3N4进行高分辨电子显微镜观察时,发现结构缺陷。观察到在三晶粒晶界处有分相现象,这表明晶界玻璃相化学成分不均匀。在晶粒中,由晶格变形和(100)晶面位移所引起应力区域时有发现。在有些区域晶格变形是如此严重,以致晶胞的六方对称性都失掉了。晶格的形变可借助于(100)晶面间距与正常值6.771?的偏离加以衡量。用高分辨电子显微镜,我们发现α-Si3N4存在辐射损伤,这可能
    The structure defects were observed by HREM in α-Si3N4, which was made by hot-pressing method with MgO and LiF as the additives. The observations indicate that the phenomenon of phase seperation occured in the grain boundaries of three grains junction, showing inhomogeneous chemical composition in glassy phase of grain boundaries. In the grains, the stress areas caused by lattice distortion and displacement of (100) planes were found. The distortions of the lattices are so serious in some regions that the hexagonal symmetry in the unit-cell gets lost. The distortion of the lattices could be measured by the deviation of the spacings of (100) planes from the normal value, 6.771?. With HREM we have found electron radiation damage of α-Si3N4 grains at lattice level caused probably by the distortion of the unit-cells of α-Si3N4. As compared with β-Si3N4, α-Si3N4 is less stable thermodynamically. According to our observations of both α-Si3N4 and β-Si3N4 made by hot-pressing method, the defects of the structure in α-Si3N4 are much more than that in β-Si3N4. This indicates that the phenomenon probably arises from easier distortion of the α-Si3N4 lattices than that in β-Si3N4.
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出版历程
  • 收稿日期:  1984-07-29
  • 刊出日期:  2005-03-31

高分辨电子显微镜研究α-Si3N4晶格缺陷

  • 1. 中国科学院上海硅酸盐研究所

摘要: 对于用MgO和LiF作为添加剂以热压法制备的α-Si3N4进行高分辨电子显微镜观察时,发现结构缺陷。观察到在三晶粒晶界处有分相现象,这表明晶界玻璃相化学成分不均匀。在晶粒中,由晶格变形和(100)晶面位移所引起应力区域时有发现。在有些区域晶格变形是如此严重,以致晶胞的六方对称性都失掉了。晶格的形变可借助于(100)晶面间距与正常值6.771?的偏离加以衡量。用高分辨电子显微镜,我们发现α-Si3N4存在辐射损伤,这可能

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