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通过对200kV离子注入机的改造,设计出一台飞行时间(TOF)谱仪,在提高脉冲束时间分辨方面,做了很大努力。测量了单晶、多晶及非晶硅的正、负离子簇飞行谱(质量谱)。比较这三种不同结构Si样品的谱数据,发现溅射离子簇质谱分布与靶物质结构密切相关,这为理论上研究Si离子簇的溅射形成机制提供了实验依据。A Time-of-Flight Mass Spectrometer was developed by modification of a 200kV Ion Im-planter. The time resolution of the 20keV pulsed Ar beam was greatly improved using a part of rising edge of the scanning voltage.Mass distributions of positive and negative microclusters were measured for monocrysta-lline, polycrystalline and amorphous silicon sa microclusters were measured for monocrysta-mass spectra would be strongly related to the structure of the silicon targets.
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