准弹道输运纳米MOSFET散粒噪声的抑制研究

贾晓菲; 杜磊; 唐冬和; 王婷岚; 陈文豪

doi:10.7498/aps.61.127202

摘要

目前研究准弹道输运纳米MOSFET散粒噪声的抑制时, 采取了完全不考虑其抑制, 或只强调抑制的存在而并未给出抑制公式的方式进行研究. 本文基于Navid模型推导了准弹道输运纳米MOSFET散粒噪声, 并得到了其在费米作用、库仑作用和二者共同作用三种情形下的抑制因子. 在此基础上, 对各抑制因子随源漏电压、栅极电压、温度及源漏掺杂浓度的变化特性进行了研究. 两者共同作用的抑制因子随源漏电压和栅极电压变化特性与文献中给出的实验结论相符合, 从而对实验上得到两者共同作用下的抑制因子随源漏电压和栅极电压的变化特性给出了理论解释.

关键词:

Abstract

Previous studies of shot noise suppression in nano-MOSFET either ignored its suppression or emphasized only its existence but gave no deeper research. In this paper, based on the Navid model, the expressions of shot noise suppression factor (Fano) in quasi-ballistic transport nano-MOSFETs are derived with separately considering Fermi effect, Coulomb interaction and the combination of the two effects. The variations of suppression-factors with source-drain voltage, gate voltage, temperature and source-drain doping are investigated. The results we obtained with considering the combination of the two effects are consistent with those from experiments, and the theoretical explanation is given.

Keywords:

shot noise /
Fano /
nano-MOSFET

作者及机构信息

1.
西安电子科技大学技术物理学院, 西安 710071;

2.
安康学院电子与信息工程系, 安康 72500

基金项目: 国家自然科学基金(批准号: 61076101)资助的课题.

Authors and contacts

1.
School of Technical Physics, Xidian University, Xi’an 710071, China;

2.
Department of Electronic and Information Engineering, Ankang University, Ankang 725000, China

Funds: Project supported by the National Natural Science Foundation of China (Grant No. 61076101).

参考文献

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[11]	Tang D H, Du L, Wang T L, Chen H, Jia X F 2011 Acta Phy. Sin. 60 097202 (in Chinese) [唐冬和, 杜磊, 王婷岚, 陈华, 贾晓菲 2011 物理学报 60 097202]
[12]	An X T, Li Y X, Liu J J 2007 Acta Phy. Sin. 56 4105 (in Chinese) [安兴涛, 李玉现, 刘建军 2007 物理学报 56 4105]
[13]	Chen H, Du L, Zhuang Y Q 2008 Acta Phy. Sin. 57 2438 (in Chinese) [陈华, 杜磊, 庄奕琪 2008 物理学报 56 2438]
[14]	Ji Y, Nan L, Mouthaan K 2009 Asia Pacific Microwave Conference Singapore, Singapore December 07---10 2009 p1659
[15]	Lundstrom M 1997 IEEE Electron Dev. Lett. 18 361
[16]	Martin J S, Bournel A, Dollfus P 2004 IEEE T. Electron. Dev. 51 1148
[17]	Rahman A, Lundstrom M S 2002 IEEE T. Electron. Dev. 49 481
[18]	Khanna V K 2004 Phys. Rep. 398 67
[19]	Ong S N, Yeo K S, Chew K W J, Chan L H K, Loo X S, Do M A, Boon C C 2010 12th International Symposium on Integrated Circuits Singapore, Singapore December 14---16 2009 p556
[20]	Lundstrom M, Guo J 2006 Nanoscale Transisitors: Device Physics, Modeling and Simulation (Beijing: Science Press) p105
[21]	Naveh Y, Averin D, Likharev K 1998 Phys. Rev. B 58 15371
[22]	Lundstrom M, Ren Z, Datta S 2002 IEEE T. Electron Dev. 49 133
[23]	Rahman A, Guo J, Datta S, Lundstrom M S 2003 IEEE T. Electron Dev. 50 1853
[24]	Rhew J H, Ren Z, Lundstrom M S 2002 Solid State Electron. 46 1899
[25]	Bulashenko O, Rub'i J 2001 Phys. Rev. B 64 45307
[26]	Gomila G, Cantalapiedra I, González T, Reggiani L 2002 Phys. Rev. B 66 75302
[27]	González T, Mateos J, Pardo D, Bulashenko O, Reggiani L 1999 Phys. Rev. B 60 2670

施引文献

[1]	Jeon J, Lee J, Kim J, Park C H, Lee H, Oh H, Kang H K, Park B G, Shin H 2009 Symposium on VLSI Technology Honolulu, June 16---18, 2009, 48
[2]	Tang D H, Du L, Wang T L, Chen H, Chen W H 2011 Acta Phy. Sin. 60 107201 (in Chinese) [唐冬和, 杜磊, 王婷岚, 陈华, 陈文豪 2011 物理学报 60 107201]
[3]	Iannaccone G 2004 J. Comput. Electron. 3 199
[4]	Mugnaini G, Iannaccone G 2006 J. Comput. Electron. 5 91
[5]	Timp G, Bude J, Bourdelle K K, Garno J, Ghetti A, Gossmann H, Green M, Forsyth G, Kim Y, Kleiman R, Klemens F, Kornblit A, Lochstampfor C, Mansfield W, Moccio S, Sorsch T, Tennant D M, Timp W, Tung R 1999 Electron Devices Meeting 1999 IEDM Technical Digest. International Washington DC, USA, December 5---8, 1999 p55
[6]	Palestri P, Esseni D, Eminente S, Fiegan C, Sangiorgi E, Selmi L 2005 IEEE T. Electron. Dev. 52 2727
[7]	Eminente S, Esseni D, Palestri P, Fiegan C, Selmi L, Sangiorgi E 2005 IEEE T. Electron. Dev. 52 2736
[8]	Isobe Y, Hara K, Navarro D, Takeda Y, Ezaki T, Miura-mattausch M 2007 IEICE Transactions On Electronics. 90 885
[9]	Navid R, Jungemann C, Lee T, Dutton R 2007 J. Appl. Phys. 101 124501
[10]	Navid R, Dutton R W 2002 International Conference on Simulation of Semiconductor Processes and Devices Kobe, Japan, September 4---6 2002 p75
[11]	Tang D H, Du L, Wang T L, Chen H, Jia X F 2011 Acta Phy. Sin. 60 097202 (in Chinese) [唐冬和, 杜磊, 王婷岚, 陈华, 贾晓菲 2011 物理学报 60 097202]
[12]	An X T, Li Y X, Liu J J 2007 Acta Phy. Sin. 56 4105 (in Chinese) [安兴涛, 李玉现, 刘建军 2007 物理学报 56 4105]
[13]	Chen H, Du L, Zhuang Y Q 2008 Acta Phy. Sin. 57 2438 (in Chinese) [陈华, 杜磊, 庄奕琪 2008 物理学报 56 2438]
[14]	Ji Y, Nan L, Mouthaan K 2009 Asia Pacific Microwave Conference Singapore, Singapore December 07---10 2009 p1659
[15]	Lundstrom M 1997 IEEE Electron Dev. Lett. 18 361
[16]	Martin J S, Bournel A, Dollfus P 2004 IEEE T. Electron. Dev. 51 1148
[17]	Rahman A, Lundstrom M S 2002 IEEE T. Electron. Dev. 49 481
[18]	Khanna V K 2004 Phys. Rep. 398 67
[19]	Ong S N, Yeo K S, Chew K W J, Chan L H K, Loo X S, Do M A, Boon C C 2010 12th International Symposium on Integrated Circuits Singapore, Singapore December 14---16 2009 p556
[20]	Lundstrom M, Guo J 2006 Nanoscale Transisitors: Device Physics, Modeling and Simulation (Beijing: Science Press) p105
[21]	Naveh Y, Averin D, Likharev K 1998 Phys. Rev. B 58 15371
[22]	Lundstrom M, Ren Z, Datta S 2002 IEEE T. Electron Dev. 49 133
[23]	Rahman A, Guo J, Datta S, Lundstrom M S 2003 IEEE T. Electron Dev. 50 1853
[24]	Rhew J H, Ren Z, Lundstrom M S 2002 Solid State Electron. 46 1899
[25]	Bulashenko O, Rub'i J 2001 Phys. Rev. B 64 45307
[26]	Gomila G, Cantalapiedra I, González T, Reggiani L 2002 Phys. Rev. B 66 75302
[27]	González T, Mateos J, Pardo D, Bulashenko O, Reggiani L 1999 Phys. Rev. B 60 2670

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