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高k介质在新型半导体器件中的应用

黄力 黄安平 郑晓虎 肖志松 王 玫

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高k介质在新型半导体器件中的应用

黄力, 黄安平, 郑晓虎, 肖志松, 王 玫

Application of high-k dielectrics in novel semiconductor devices

Huang Li, Huang An-Ping, Zheng Xiao-Hu, Xiao Zhi-Song, Wang Mei
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  • 当CMOS器件特征尺寸缩小到45 nm以下, SiO2作为栅介质材料已经无法满足性能和功耗的需要, 用高k材料替代SiO2是必然选择. 然而, 由于高k材料自身存在局限性, 且与器件其他部分的兼容性差, 产生了很多新的问题如界面特性差、阈值电压增大、迁移率降低等. 本文简要回顾了高k栅介质在平面型硅基器件中应用存在的问题以及从材料、结构和工艺等方面采取的解决措施, 重点介绍了高k材料在新型半导体器件中的应用, 并展望了未来的发展趋势.
    As the feature size of MOSFET scales beyond 45 nm, SiO2 as gate dielectric fails to meet the performance requirement because of the high gate oxide leakage current. It is necessary to replace SiO2 with high-k materials. However, high-k materials as gate dielectric have some limitations and are not expectedly compatible with the conventional structure, inducing new challenges such as bad interfacial quality, increased threshold voltage, mobility degradation, etc. In this paper we review the problems encountered in the introduction of high-k gate dielectric into planar devices and the solutions in terms of material, device structure and process integration. Some novel applications of high-k materials in new devices and the future trend are also reviewed.
    • 基金项目: 国家自然科学基金(批准号: 51172009, 51172013和11074020) 和教育部新世纪优秀人才计划(NCET-08-0029)资助的课题.
    • Funds: Project supported by the National Natural Science Foundation of China (Grant Nos. 51172009, 51172013, 11074020), and the Program for New Century Excellent Talents in University of Ministry of Education of China (Grant No. NCET-08-0029).
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    Sun J, Lind E, Maximov I, Xu H Q 2011 IEEE Electron Dev. Lett. 32 131

    [25]

    Yan X B, Xia Y D, Xu H N, Gao X, Li H T, Li R, Yin J, Liu Z G 2010 Appl. Phys. Lett. 97 112101

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    Menke T, Meuffels P, Dittmann R, Szot K, Waser R 2009 J. Appl. Phys. 105 066104

    [27]

    Driscoll T, Kim H-T, Chae B-G, Ventra M D, Basov D N 2009 Appl. Phys. Lett. 95 043503

    [28]

    Yang Z, Ko C, Ramanathan S 2011 Annu. Rev. Mater. Res. 41 337

    [29]

    Xia Q F, Robinett W, Cumbie M W, Banerjee N, Cardinali T J, Yang J J, Wu W, Li X, Tong W M, Strukov D B, Snider G S, Medeiros-Ribeiro G, Williams R S 2009 Nano Lett. 9 3640

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  • [1]

    Robertson J 2006 Rep. Prog. Phys. 69 327

    [2]

    Zheng X H, Huang A P, Yang Z C, Xiao Z S, Wang M, Cheng G A 2011 Acta Phys. Sin. 60 017702 (in Chinese) [郑晓虎, 黄安平, 杨智超, 肖志松, 王 玫, 程国安 2011 物理学报 60 017702]

    [3]

    Weng Y, Wang H 2008 Semiconductor Technology 33 1 (in Chinese) [翁 妍, 汪 辉 2008 半导体技术 33 1]

    [4]

    Fischetti M V, Neumayer D A, Cartier E A 2001 J. Appl. Phys. 90 4587

    [5]

    Weber O, Casse M, Thevenod L, Ducroquet F, Ernst T, Deleonibus S 2006 Solid-State Electron. 50 626

    [6]

    Yang Z C, Huang A P, Xiao Z S 2010 Physics 39 113 (in Chinese) [杨智超, 黄安平, 肖志松 2010 物理 39 113]

    [7]

    Datta S, Dewey G, Doczy M, Doyle B S, Jin B, Kavalieros J, Kotlyer R, Metz M, Zelick N, Chau R 2003 IEEE International Electron Devices Meeting, Washington, D.C., December 08-10, 2003 p653

    [8]

    Maitra K, Frank M M, Narayanan V, Misra V, Cartier E A 2007 J. Appl. Phys. 102 114507

    [9]

    Weber O, Damlencourt J F, Andrieu F, Ducroquet F, Ernst T, Hartmann J M, Papon A M, Renault O, Guillaumot B, Deleonibus S 2006 IEEE Trans. Electron Devices 53 449

    [10]

    Lin Y X, Ozturk M C, Chen B, Rhee S J, Lee J C, Misra V 2005 Appl. Phys. Lett. 87 071903

    [11]

    Johansson M, Yousif M Y A, Lundgren P, Bengtsson S, Sundqvist J, Harsta A, Radamson H H 2003 Semicond. Sci. Technol. 18 820

    [12]

    Chung K B, Lucovsky G, Lee W J, Cho M H, Jeon H 2009 Appl. Phys. Lett. 94 042907

    [13]

    Chau R, Datta S, Doczy M, Doyle B, Kavalieros J, Metz M 2004 IEEE Electron Dev. Lett. 25 408

    [14]

    Hisamoto D, Lee W C, Kedzierski J, Takeuchi H, Asano K, Kuo C, Anderson E, King T J, Bokor J, Hu C M 2000 IEEE Trans. Electron Devices 47 2320

    [15]

    Agrawal S, Fossum J G 2008 IEEE Trans. Electron Devices 55 1714

    [16]

    Manoj C R, Rao V R 2007 IEEE Electron Dev. Lett. 28 295

    [17]

    Shishir R S, Ferry D K 2009 J. Phys.: Condens. Matter 21 232204

    [18]

    Moon J S, Curtis D, Hu M, Wong D, McGuire C, Campbell P M, Jernigan G, Tedesco J L, VanMil B, Myers-Ward R, Eddy C, Gaskill D K 2009 IEEE Electron Dev. Lett. 30 650

    [19]

    Liao L, Bai J W, Cheng R, Lin Y C, Jiang S, Huang Y, Duan X F 2010 Nano Lett. 10 1917

    [20]

    Strukov D B, Snider G S, Stewart D R, Williams R S 2008 Nature 453 80

    [21]

    Szot K, Rogala M, Speier W, Klusek Z, Besmehn A, Waser R 2011 Nanotechnology 22 254001

    [22]

    Lee H Y, Chen P S, Wang C C, Maikap S, Tzeng P J, Lin C H, Lee L S 2007 Jpn. J. Appl. Phys. 46 2175

    [23]

    Lee H Y, Chen P S, Wu T Y, Chen Y S, Wang C C, Tzeng P J, Lin C H, Chen F, Lien C H, Tsai M J 2008 IEEE International Electron Devices Meeting, San Francisco CA, December 15-17, 2008 p1

    [24]

    Sun J, Lind E, Maximov I, Xu H Q 2011 IEEE Electron Dev. Lett. 32 131

    [25]

    Yan X B, Xia Y D, Xu H N, Gao X, Li H T, Li R, Yin J, Liu Z G 2010 Appl. Phys. Lett. 97 112101

    [26]

    Menke T, Meuffels P, Dittmann R, Szot K, Waser R 2009 J. Appl. Phys. 105 066104

    [27]

    Driscoll T, Kim H-T, Chae B-G, Ventra M D, Basov D N 2009 Appl. Phys. Lett. 95 043503

    [28]

    Yang Z, Ko C, Ramanathan S 2011 Annu. Rev. Mater. Res. 41 337

    [29]

    Xia Q F, Robinett W, Cumbie M W, Banerjee N, Cardinali T J, Yang J J, Wu W, Li X, Tong W M, Strukov D B, Snider G S, Medeiros-Ribeiro G, Williams R S 2009 Nano Lett. 9 3640

    [30]

    Pershin Y V, Ventra M D 2010 IEEE Trans. Circuits Syst. I, Reg. Papers 57 1857

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出版历程
  • 收稿日期:  2011-10-19
  • 修回日期:  2011-12-05
  • 刊出日期:  2012-07-05

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