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位移辐射效应对量子阱激光器性能的影响

马晶 车驰 韩琦琦 周彦平 谭立英

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位移辐射效应对量子阱激光器性能的影响

马晶, 车驰, 韩琦琦, 周彦平, 谭立英

Displacement damage effect on the characteristics of quantum well laser

Ma Jing, Che Chi, Han Qi-Qi, Zhou Yan-Ping, Tan Li-Ying
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  • 使用加速器对量子阱半导体激光器进行了总通量110-16 cm-2的电子辐照实验. 辐射实验结果表明, 在辐射环境下激光器的输出功率下降、阈值电流增加. 从理论上分析了位移效应对量子阱激光器的影响, 并推导了电子通量与相对阈值电流变化、相对输出功率变化的函数关系式. 该公式的计算结果与实验测试结果符合很好, 有效地反映了电子辐照环境下激光器的性能变化趋势. 该公式可用于预测激光器在辐射环境下的性能变化, 有着较大实际应用价值.
    Quantum well lasers are irradiated by electrons with a total fluence of 1 10-16 cm-2. The output power is reduced and the threshold current is increased under electron irradiation. The displacement damage effect on quantum well laser is analyzed theoretically and we deduce the relationship between the radiation induced output power and threshold current change and the electron fluence. The formula fits the experiment data very well, and can describe the change trend of the laser performance under electron irradiation, it can also predict the behavior of quantum well laser under radiation environment and is valuable for practical application.
    [1]

    Warner J H 2008 Ph. D. Dissertation (Baltimore: University of Maryland)

    [2]

    Claeys C, Simoen E 2002 Radiation Effects in Advanced Semiconductor Materials and Devices (Berlin: Springer-Verlag)

    [3]

    Boutillier M, Gauthier-Lafaye O, Bonnefont S, Lozes-Dupuy F, Lombez F, Lagarde D, Marie, Vermersch F J X, Calligaro M, Lecomte M, Parillaud O, Krakowski M 2007 IEEE Trans. Nucl. Sci. 54 1110

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    Kalavagunta A, Bo C, Neifeld M A 2003 IEEE Trans. Nucl. Sci. 50 1982

    [6]

    Johnston A H, Miyahira T F 2004 IEEE Trans. Nucl. Sci. 51 3564

    [7]

    Lee S C, Zhao Y F, Schrimpf R D 1999 IEEE Trans. Nucl. Sci. 46 1797

    [8]

    Johnston A H 2001 IEEE Trans. Nucl. Sci. 48 1713

    [9]

    Suhara T (Translated by Zhou N S) 2002 Fundamental of Semiconductor Lasers (Beijing: Science Press) pp123-140 (in Chinese) [栖原敏明 2002 半导体激光器基础 (北京: 科学出版社) 第123—140页]

    [10]

    Ribbat C, Sellin R, Grundmann M, Bimberg D, Sobolev N A, Carmo M C 2001 Electron. Lett. 37 174

    [11]

    Cao J Z 1993 Radiation Effects in Semiconductor Material (Beijing: Science Press) pp152-170 [曹建中 1993 半导体材料的辐射效应 (北京: 科学出版社) 第152—170页]

    [12]

    Drabold D A, Estreicher S K 2007 Theory of Defects in Semicondcutors (Berlin: Springer-Verlag)

    [13]

    Agrawal G 1986 Long Wavelength Semiconductor Lasers (New York: Springer) pp30, 55-57

    [14]

    Svelto O 2010 Principles of Lasers (France: Springer) p108

    [15]

    Hu Y S, Wang L, Chen Z X 1990 Chin. J. Semicond. 11 889 (in Chinese) [胡雨生, 汪乐, 陈正秀 1990 半导体学报 11 889]

    [16]

    Walters R J, Shaw G J, Summers G P, Burke E A, Messenger S R 1992 IEEE Trans. Nucl. Sci. 39 2257

  • [1]

    Warner J H 2008 Ph. D. Dissertation (Baltimore: University of Maryland)

    [2]

    Claeys C, Simoen E 2002 Radiation Effects in Advanced Semiconductor Materials and Devices (Berlin: Springer-Verlag)

    [3]

    Boutillier M, Gauthier-Lafaye O, Bonnefont S, Lozes-Dupuy F, Lombez F, Lagarde D, Marie, Vermersch F J X, Calligaro M, Lecomte M, Parillaud O, Krakowski M 2007 IEEE Trans. Nucl. Sci. 54 1110

    [4]

    Taylor E W, Paxton A H, Schone H 1998 IEEE Trans. Nucl. Sci. 45 1514

    [5]

    Kalavagunta A, Bo C, Neifeld M A 2003 IEEE Trans. Nucl. Sci. 50 1982

    [6]

    Johnston A H, Miyahira T F 2004 IEEE Trans. Nucl. Sci. 51 3564

    [7]

    Lee S C, Zhao Y F, Schrimpf R D 1999 IEEE Trans. Nucl. Sci. 46 1797

    [8]

    Johnston A H 2001 IEEE Trans. Nucl. Sci. 48 1713

    [9]

    Suhara T (Translated by Zhou N S) 2002 Fundamental of Semiconductor Lasers (Beijing: Science Press) pp123-140 (in Chinese) [栖原敏明 2002 半导体激光器基础 (北京: 科学出版社) 第123—140页]

    [10]

    Ribbat C, Sellin R, Grundmann M, Bimberg D, Sobolev N A, Carmo M C 2001 Electron. Lett. 37 174

    [11]

    Cao J Z 1993 Radiation Effects in Semiconductor Material (Beijing: Science Press) pp152-170 [曹建中 1993 半导体材料的辐射效应 (北京: 科学出版社) 第152—170页]

    [12]

    Drabold D A, Estreicher S K 2007 Theory of Defects in Semicondcutors (Berlin: Springer-Verlag)

    [13]

    Agrawal G 1986 Long Wavelength Semiconductor Lasers (New York: Springer) pp30, 55-57

    [14]

    Svelto O 2010 Principles of Lasers (France: Springer) p108

    [15]

    Hu Y S, Wang L, Chen Z X 1990 Chin. J. Semicond. 11 889 (in Chinese) [胡雨生, 汪乐, 陈正秀 1990 半导体学报 11 889]

    [16]

    Walters R J, Shaw G J, Summers G P, Burke E A, Messenger S R 1992 IEEE Trans. Nucl. Sci. 39 2257

计量
  • 文章访问数:  5459
  • PDF下载量:  526
  • 被引次数: 0
出版历程
  • 收稿日期:  2012-01-29
  • 修回日期:  2012-05-24
  • 刊出日期:  2012-11-05

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