接触电阻对碳纳米管场发射的影响

吕文辉; 张帅

doi:10.7498/aps.61.018801

摘要

基于改进的悬浮球模型,计算了碳纳米管和衬底间的接触电阻存在时碳纳米管顶端的局域电场, 并结合Fowler-Nordheim (F-N)场发射规律研究了接触电阻对碳纳米管场发射的影响.研究表明,接触电阻的存在,在高电场区域接触电阻抑制了碳纳米管的电子场发射,导致在高电场区域出现电流饱和及FN直线偏折现象.其原因可归结为接触电阻使得在碳纳米管顶端的局域电场相对于没有接触电阻时相对地减少.

关键词:

After accounting for a contact resistance between carbon nanotube (CNT) and substrate, the local electric filed of top of CNT were calculated by combining an improved floated sphere model and the Fowler-Nordheim theory for understand the effect of the contact resistance on field emission from CNT. It is found that the field emission current is limited and current saturation and nonlinear characteristics of the Fowler-Nordheim plots are produced by the contact resistance in region of high electric field. The origin can be attributed to the local electric filed of top of CNT remarkably debases as compared to without the contact resistance.

Keywords:

作者及机构信息

吕文辉¹,
张帅²

1.
湛江师范学院物理系, 湛江 524048;

2.
湛江师范学院科技处, 湛江 524048

基金项目: 广东高校优秀青年创新人才培育项目(批准号:LYM08075)和浙江大学硅材料国家重点实验室开放课题(批准号:SKL2010-5)资助的课题.

Authors and contacts

Lu Wen-Hui¹,
Zhang Shuai²

1.
Department of Physics, Zhanjiang Normal College, Zhanjiang 524048, China;

2.
Science and technology office, Zhanjiang Normal College, Zhanjiang 524048, China

Funds: Project supported by the Foundation for Distinguished Young Talents in Higher Education of Guangdong, China (No:LYM08075), and the Open Project of State Key Laboratory of Silicon Materials, Zhejiang University, China (No.SKL2010-5).

参考文献

[1]	Bethune D, Kiang C-H, de Vries M, Gorman G, Savoy R, Vazquez J, Beyers R 1993 Nature 363 605
[2]	de Heer W A, Chatelain A, Ugarte D 1995 Science 270 1179
[3]	Zhong D Y, Zhang G Y, Liu S, Sakurai T, Wang E G 2002 Appl. Phys. Lett. 80 506
[4]	Choi W B, Chung D S, Kang J H 1999 Appl. Phys. Lett. 75 312
[5]	Zhang J, Yang G, Cheng Y, Gao B, Qiu Q, Cheng Y, Gao B, Qiu Q, Lu J P , Zhou O 2003 Appl. Phys. Lett. 86 184104
[6]	Park J H, Son G H, Moon J S, Han J H, Berdinsky A S, Kuvshinov D G, Yoo J B, Park C Y, Nam J W, Park J, Lee C G, Choe D H 2005 J. Vac. Sci. Technol. B 23 749
[7]	Fowler R H, Nordheim D L 1928 Proc. Roy. Soc. London, Ser. A 119 173
[8]	Zhang J H, Wang X, Yang W W, Yu W D, Feng T, Li Q, Liu X H 2006 Carbon 44 418
[9]	Chen L F, Song H, Zhao H F, Liu X, Guo W G, Li D B, Jiang H, Cao L Z, Li Z M 2009 J. Appl. Phys. 106 033703
[10]	Yamashita T, Hasegawa S, Nishida S, Ishimaru M, Hirotsu Y, Asahi H 2005 Appl. Phys. Lett. 44 082109
[11]	Wang X Q,Wang M, He P M, Xu Y B, Li Z H 2004 J. Appl. Phys. 96 6752
[12]	Wang X Q, Wang M, Li Z H, Yang B, Wang F F, He P M, Xu Y B 2005 Acta Phys. Sin. 54 1347 (in Chinese) [王新庆,王淼,李振华,杨兵,王凤飞,何丕模,徐亚伯 2005 物理学报 54 1347]
[13]	Wang M, Shang X F, Li Z H, Wang X Q, Xu Y B 2006 Acta Phys. Sin. 55 797 (in Chinese) [王淼,尚学府,李振华,王新庆,徐亚伯 2005 物理学报 54 797]
[14]	She J C , Xu N S, Deng S Z, Chen J, Bishop H, Huq S E, Wang L, Zhong D Y, Wang E G 2003 Appl. Phys. Lett. 83 2671
[15]	Xu X P, Brandes G R 1999 Appl. Phys. Lett. 74 2549
[16]	Dean K A, Chalamala B R 2000 Appl. Phys. Lett. 76 375

施引文献

[1]	Bethune D, Kiang C-H, de Vries M, Gorman G, Savoy R, Vazquez J, Beyers R 1993 Nature 363 605
[2]	de Heer W A, Chatelain A, Ugarte D 1995 Science 270 1179
[3]	Zhong D Y, Zhang G Y, Liu S, Sakurai T, Wang E G 2002 Appl. Phys. Lett. 80 506
[4]	Choi W B, Chung D S, Kang J H 1999 Appl. Phys. Lett. 75 312
[5]	Zhang J, Yang G, Cheng Y, Gao B, Qiu Q, Cheng Y, Gao B, Qiu Q, Lu J P , Zhou O 2003 Appl. Phys. Lett. 86 184104
[6]	Park J H, Son G H, Moon J S, Han J H, Berdinsky A S, Kuvshinov D G, Yoo J B, Park C Y, Nam J W, Park J, Lee C G, Choe D H 2005 J. Vac. Sci. Technol. B 23 749
[7]	Fowler R H, Nordheim D L 1928 Proc. Roy. Soc. London, Ser. A 119 173
[8]	Zhang J H, Wang X, Yang W W, Yu W D, Feng T, Li Q, Liu X H 2006 Carbon 44 418
[9]	Chen L F, Song H, Zhao H F, Liu X, Guo W G, Li D B, Jiang H, Cao L Z, Li Z M 2009 J. Appl. Phys. 106 033703
[10]	Yamashita T, Hasegawa S, Nishida S, Ishimaru M, Hirotsu Y, Asahi H 2005 Appl. Phys. Lett. 44 082109
[11]	Wang X Q,Wang M, He P M, Xu Y B, Li Z H 2004 J. Appl. Phys. 96 6752
[12]	Wang X Q, Wang M, Li Z H, Yang B, Wang F F, He P M, Xu Y B 2005 Acta Phys. Sin. 54 1347 (in Chinese) [王新庆,王淼,李振华,杨兵,王凤飞,何丕模,徐亚伯 2005 物理学报 54 1347]
[13]	Wang M, Shang X F, Li Z H, Wang X Q, Xu Y B 2006 Acta Phys. Sin. 55 797 (in Chinese) [王淼,尚学府,李振华,王新庆,徐亚伯 2005 物理学报 54 797]
[14]	She J C , Xu N S, Deng S Z, Chen J, Bishop H, Huq S E, Wang L, Zhong D Y, Wang E G 2003 Appl. Phys. Lett. 83 2671
[15]	Xu X P, Brandes G R 1999 Appl. Phys. Lett. 74 2549
[16]	Dean K A, Chalamala B R 2000 Appl. Phys. Lett. 76 375

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