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中国物理学会期刊

GaAs薄膜的有效量子限制长度及其极化子特性

CSTR: 32037.14.aps.62.197302

Effective length of quantum confinement and polaron effect in a GaAs film

CSTR: 32037.14.aps.62.197302
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  • 本文用分数维方法研究AlxGa1-xAs衬底上GaAs薄膜中的极化子特性, 提出了确定GaAs薄膜的有效量子限制长度的一个新方法, 解决了原来方法中在衬底势垒处有效量子限制长度发散的困难, 得到了AlxGa1-xAs衬底上GaAs薄膜中的极化子的维数和结合能.

     

    The polaron confined in a GaAs film deposited on AlxGa1-xAs substrate are investigated in the framework of the fractional-dimensional space approach. We propose a new approach to define the effective length of quantum confinement. Limitations of the definition of original effective well width are discussed. The dimension and the binding energy of a polaron confined in a GaAs film deposited on Al0.3Ga0.7As substrate are obtained and investigated.

     

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