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非晶铟锌氧化物薄膜晶体管的低频噪声特性与分析

刘远 吴为敬 李斌 恩云飞 王磊 刘玉荣

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非晶铟锌氧化物薄膜晶体管的低频噪声特性与分析

刘远, 吴为敬, 李斌, 恩云飞, 王磊, 刘玉荣

Analysis of low-frequency noise in the amorphous indium zinc oxide thin film transistors

Liu Yuan, Wu Wei-Jing, Li Bin, En Yun-Fei, Wang Lei, Liu Yu-Rong
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  • 本文针对底栅结构非晶铟锌氧化物薄膜晶体管的低频噪声特性开展实验与理论研究. 由实验结果可知:受铟锌氧化物与二氧化硅界面处缺陷态俘获与释放载流子效应的影响,器件沟道电流噪声功率谱密度随频率的变化遵循1/fγ(γ ≈ 0.75)的变化规律;此外,器件沟道电流归一化噪声功率谱密度随沟道长度与沟道宽度的增加而减小,证明器件低频噪声来源于沟道的闪烁噪声,可忽略源漏结接触及寄生电阻对器件低频噪声的影响. 最后,基于载流子数涨落及迁移率涨落模型,提取γ 因子与平均Hooge因子,为评价材料及器件特性奠定基础.
    Properties of low-frequency noise in the amorphous InZnO thin film transistors have been investigated in this paper. Due to the emission and trapping processes of carriers between trapping states located in the interface between the IZO layer and gate insulator, the drain current spectral density shows a 1/fγ(γ =0.75) low-frequency noise behavior. In addition, the normalized drain current spectral density is decreased linearly with the increase of gate length and width. This property confirms that the low-frequency noise in the IZO TFTs is due to the flicker noise in the channel, the contribution of source/drain contact and parasitic resistances can be ignored. Finally, based on the number fluctuation theory and the mobility fluctuation theory, the γ and average Hooge's parameters have been extracted to estimate the quality of devices and materials.
    • 基金项目: 国家自然科学基金(批准号:61204112,61204089,61306099)、中国博士后科学基金(批准号:2012M521628)和中央高校基本科研业务费(批准号:2012ZM0003)资助的课题.
    • Funds: Project supported by the National Natural Science Foundation of China (Grant Nos. 61204112, 61204089, 61306099), the China Postdoctoral Science Foundation (Grant No.2012M521628), and the Fundamental Research Funds for the Central Universities, China (Grant No. 2012ZM0003).
    [1]

    Lan L, Xiong N, Xiao P, Li M, Xu H, Yao R, Wen S, Peng J 2013 Appl. Phys Lett. 102 242102

    [2]

    Zhang G M, Guo L Q, Zhao K S, Yan Z H 2013 Acta Phys. Sin. 62 137201 (in Chinese)[张耕铭, 郭立强, 赵孔胜, 颜钟惠 2013 物理学报 62 137201]

    [3]

    Huang Y C, Liu D F, Liang J S, Gong H M 2005 Acta Phys. Sin. 54 2261 (in Chinese)[黄杨程, 刘大福, 梁晋穗等 2005 物理学报 54 2261]

    [4]

    Fung T C, Baek G, Kanicki J 2010 J. Appl. Phys. 108 074518

    [5]

    Kim S, Jeon Y, Lee J H, Ahn B D, Park S Y, Park J H, Kim J H, Park J, Kim D M, Kim D H 2010 IEEE Electron Device Lett. 31 1236

    [6]

    Lee J M, Cheong W S, Hwang C S, Cho I T, Kwon H I, Lee J H 2009 IEEE Electron Device Lett. 30 505

    [7]

    Choi H S, Jeon S, Kim H, Shin J, Kim C, Chung U I 2011 IEEE Electron Device Lett. 32 1083

    [8]

    9812B noise analyzer user's manual. 2008 (ProPlus Design Solutions, Inc.)

    [9]

    Vandamme L K J, Hooge 2008 IEEE Trans. Electron Device 55 3070

    [10]

    Dimitriadis C A, Brini J, Lee J I, Farmakis F V, Kamarinos 1999 J. Appl. Phys. 85 3934

    [11]

    Hooge F N 1994 IEEE Trans. Electron Device 41 1926

    [12]

    Rigaud D, Valenza M, Rhayem J 2002 IEE Proc. Circuits Devices Syst. 149 75

    [13]

    Ghibaudo G, Roux O, Nguyen-Duc C, Balestra F, Brini J 1991 Phys. Status Solidi A 124 571

    [14]

    Ioannidis E G, Tsormpatzoglou A, Tassis D H, Dimitriadis, Templier F, Kamarinos G 2010 J. Appl. Phys. 108 106103

    [15]

    Vandamme L K J, Hooge F N 2008 IEEE Trans. Electron Device 55 3070

    [16]

    Mercha A, Pichon L, Carin R, Mourgues K, Bonnaud O 2001 Thin Solid Films 383 303

    [17]

    Rhayem J, Rigaud D, Valenza M, Szydlo, Lebrun H 2000 J. Appl. Phys. 87 1983

    [18]

    Vandamme L K J, Feyaerts R, Trefan G, Detcheverry C 2002 J. Appl. Phys. 91 719

  • [1]

    Lan L, Xiong N, Xiao P, Li M, Xu H, Yao R, Wen S, Peng J 2013 Appl. Phys Lett. 102 242102

    [2]

    Zhang G M, Guo L Q, Zhao K S, Yan Z H 2013 Acta Phys. Sin. 62 137201 (in Chinese)[张耕铭, 郭立强, 赵孔胜, 颜钟惠 2013 物理学报 62 137201]

    [3]

    Huang Y C, Liu D F, Liang J S, Gong H M 2005 Acta Phys. Sin. 54 2261 (in Chinese)[黄杨程, 刘大福, 梁晋穗等 2005 物理学报 54 2261]

    [4]

    Fung T C, Baek G, Kanicki J 2010 J. Appl. Phys. 108 074518

    [5]

    Kim S, Jeon Y, Lee J H, Ahn B D, Park S Y, Park J H, Kim J H, Park J, Kim D M, Kim D H 2010 IEEE Electron Device Lett. 31 1236

    [6]

    Lee J M, Cheong W S, Hwang C S, Cho I T, Kwon H I, Lee J H 2009 IEEE Electron Device Lett. 30 505

    [7]

    Choi H S, Jeon S, Kim H, Shin J, Kim C, Chung U I 2011 IEEE Electron Device Lett. 32 1083

    [8]

    9812B noise analyzer user's manual. 2008 (ProPlus Design Solutions, Inc.)

    [9]

    Vandamme L K J, Hooge 2008 IEEE Trans. Electron Device 55 3070

    [10]

    Dimitriadis C A, Brini J, Lee J I, Farmakis F V, Kamarinos 1999 J. Appl. Phys. 85 3934

    [11]

    Hooge F N 1994 IEEE Trans. Electron Device 41 1926

    [12]

    Rigaud D, Valenza M, Rhayem J 2002 IEE Proc. Circuits Devices Syst. 149 75

    [13]

    Ghibaudo G, Roux O, Nguyen-Duc C, Balestra F, Brini J 1991 Phys. Status Solidi A 124 571

    [14]

    Ioannidis E G, Tsormpatzoglou A, Tassis D H, Dimitriadis, Templier F, Kamarinos G 2010 J. Appl. Phys. 108 106103

    [15]

    Vandamme L K J, Hooge F N 2008 IEEE Trans. Electron Device 55 3070

    [16]

    Mercha A, Pichon L, Carin R, Mourgues K, Bonnaud O 2001 Thin Solid Films 383 303

    [17]

    Rhayem J, Rigaud D, Valenza M, Szydlo, Lebrun H 2000 J. Appl. Phys. 87 1983

    [18]

    Vandamme L K J, Feyaerts R, Trefan G, Detcheverry C 2002 J. Appl. Phys. 91 719

计量
  • 文章访问数:  3196
  • PDF下载量:  645
  • 被引次数: 0
出版历程
  • 收稿日期:  2013-11-01
  • 修回日期:  2014-01-08
  • 刊出日期:  2014-05-05

非晶铟锌氧化物薄膜晶体管的低频噪声特性与分析

  • 1. 工业和信息化部电子第五研究所, 电子元器件可靠性物理及其应用技术国家重点实验室, 广州 510610;
  • 2. 华南理工大学, 发光材料与器件国家重点实验室, 广州 510640;
  • 3. 华南理工大学, 电子与信息学院, 广州 510640
    基金项目: 国家自然科学基金(批准号:61204112,61204089,61306099)、中国博士后科学基金(批准号:2012M521628)和中央高校基本科研业务费(批准号:2012ZM0003)资助的课题.

摘要: 本文针对底栅结构非晶铟锌氧化物薄膜晶体管的低频噪声特性开展实验与理论研究. 由实验结果可知:受铟锌氧化物与二氧化硅界面处缺陷态俘获与释放载流子效应的影响,器件沟道电流噪声功率谱密度随频率的变化遵循1/fγ(γ ≈ 0.75)的变化规律;此外,器件沟道电流归一化噪声功率谱密度随沟道长度与沟道宽度的增加而减小,证明器件低频噪声来源于沟道的闪烁噪声,可忽略源漏结接触及寄生电阻对器件低频噪声的影响. 最后,基于载流子数涨落及迁移率涨落模型,提取γ 因子与平均Hooge因子,为评价材料及器件特性奠定基础.

English Abstract

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