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中国物理学会期刊

SiS低激发态势能曲线和光谱性质的全电子组态相互作用方法研究

CSTR: 32037.14.aps.63.113102

All-electron configuration interaction study on potential energy curves of low-lying excited states and spectroscopic properties of SiS

CSTR: 32037.14.aps.63.113102
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  • 基于全电子的相关一致极化4-(aug-cc-pwCVQZ-DK)基组,采用高精度的多参考组态相互作用方法计算了SiS自由基与最低的解离极限Si(3Pg)+S(3Pg)对应的18个-S电子态的势能曲线. 计算中考虑了标量相对论效应以及Si(2s22p6)和S(2s22p6)内壳层电子产生的关联效应. 基于计算的势能曲线,拟合出了束缚态的光谱参数,包括平衡核间距Re,绝热激发能Te,振动常数e和ee,平衡转动常数Be;并分析了束缚态在不同键长位置处的电子组态. 计算了18个-S态的电偶极矩函数,阐明了电子态的组态变化对电偶极矩的影响. 给出了包含b3和A1态的自旋-轨道矩阵元随核间距变化的曲线,分析了邻近的电子激发态对b3和A1态的扰动. 计算了A1-X1+和E1+X1+跃迁的跃迁偶极矩和Franck-Condon因子,讨论了A1和E1+的最低五个振动能级的辐射寿命.

     

    The 18 -S states correlated to the lowest dissociation (Si(3Pg)+S(3Pg)) limit are computed with high-level multireference configuration interaction (MRCI(SD)) approach through utilizing all-electron aug-cc-pwCVQZ-DK basis set. The scalar relativistic effect and the core-valence correlation effect of Si (2s22p6) and S (2s22p6) are taken into account. On the basis of calculated potential energy curves, the spectroscopic constants of the bound states are fitted, including equilibrium distance Re, adiabatic transition energies Te, harmonic vibrational frequencies e, anharmonic terms exe, and rotational constant Be. The electronic configurations at different bond lengths are given. The electronic dipole moments of 18 -S states are calculated, illuminating the influence of electronic configuration variation on electronic dipole moment. With the help of nonvanishing spin-orbit matrix elements including b3 and A1 as a function of the internuclear distance, the nearby state perturbations to b3 and A1 are discussed in detail. Finally, the transition dipole moments and Franck-Condon factors of A1X1+ and E1+X1+ transitions are obtained, and radiative lifetimes of five lowest vibrational levels of the two singlet excited states are evaluated.

     

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