免掺杂、非对称异质接触晶体硅太阳电池的研究进展

赵生盛; 徐玉增; 陈俊帆; 张力; 侯国付; 张晓丹; 赵颖

doi:10.7498/aps.68.20181991

摘要

免掺杂、非对称异质接触的新型太阳电池由于近几年的飞速发展, 理论转化效率已达到28%, 具有较大的发展空间, 引起了人们的重视. 由于传统晶硅太阳电池产业存在生产设备成本高、原材料易燃易爆等诸多限制, 市场对太阳电池产业低成本、绿色无污染的期待越来越高, 极大地增加了免掺杂、非对称异质接触的新型太阳电池研究和开发的必要性. 为了进一步加快免掺杂、非对称异质接触晶体硅太阳电池的研究进度, 本文对其发展现状进行了综述, 着重讨论了过渡金属氧化物(TMO)载流子选择性运输的基本原理、制备技术以及空穴传输层、电子传输层和钝化层对基于TMO构建的免掺杂、非对称异质接触(DASH)太阳电池性能的影响, 以期对电池的工作机理、材料选择有更深刻的认识, 为新型高效的DASH太阳电池制备提供指导.

关键词:

Abstract

Due to the rapid development of dopant free asymmetric heterogeneous contacts in recent years, the theoretical conversion efficiency can reach 28%, which has large room for development and has attracted one’s attention. With the expectation of low cost and green pollution-free solar cell, the traditional crystalline silicon solar cell has many limitations due to its high equipment cost and flammable and explosive raw materials. It greatly increases the necessity of research and development of new solar cells with no doping and asymmetric heterogeneous contacts. The new solar cell is safe and environmental friendly due to the multi-faceted advantages of dopant-free asymmetric heterogeneous contact (DASH) solar cells constructed by transition metal oxide (TMO): the TMO has been widely studied as an alternative option, because of its wide band gap, little parasitic absorption, as well as repressed auger recombination, and conducing to the increase of the short-circuit current density of the solar cells; the DASH solar cell has high efficiency potential, its theoretical efficiency has reached 28%, and it can be produced by low-cost technology such as thermal evaporation or solution method; it always avoids using flammable, explosive and toxic gases in the manufacturing process. Our group proposed using MoO_x as a hole selective contact and ZnO as an electron selective contact to construct a new and efficient DASH solar cell. It has achieved a conversion efficiency of 16.6%. Another device, in which MoO_x is used as the hole selective contact and n-nc-Si:H as the electron selective, was fabricated, and its efficiency has reached 14.4%. In order to further speed up the research progress of the dopant-free asymmetric heterogeneous contact crystalline silicon solar cell, the development status is reviewed, and the basic principle and preparation technology of selective transport of transition metal oxide (TMO) carriers are discussed. And the effect of the hole transport layer, the electron transport layer and the passivation layer on the performance of the TMO dopant-free asymmetric heterogeneous contact (DASH) solar cells are discussed in order to have an in-depth understanding of the working mechanism and material selection of the battery, thereby providing guidance in preparing new and efficient DASH solar cells.

Keywords:

作者及机构信息

1.
南开大学光电子薄膜器件与技术研究所, 天津　300350

2.
天津市光电子薄膜器件与技术重点实验室, 天津　300350

3.
薄膜光电子技术教育部工程研究中心, 天津　300350

4.
天津市中欧太阳能光伏发电技术联合研究中心, 天津　300350

通信作者: 侯国付, gfhou@nankai.edu.cn

基金项目: 国家自然科学基金(批准号: 61474066, 61504069)、天津市自然科学基金(批准号: 15JCYBJC21200)、高等学校学科创新引智计划(批准号: B16027)、光学信息技术科学教育部重点实验室开放基金(批准号: 2017KFKT015)和中央高校基本科研业务费资助的课题.

Authors and contacts

1.
Institute of Photoelectronic Thin Film Devices and Technology of Nankai University, Tianjin 300350, China

2.
Key Laboratory of Photoelectronic Thin Film Devices and Technology of Tianjin, Tianjin 300350, China

3.
Engineering Center of Thin Film Photoelectronic Technology of Ministry of Education, Tianjin 300350, China

4.
Sino-Euro Joint Research Center for Photovoltaic Power Generation of Tianjin, Tianjin 300350, China

Corresponding author: Hou Guo-Fu, gfhou@nankai.edu.cn

Funds: Project supported by the National Natural Science Foundation of China (Grant Nos. 61474066, 61504069), the Natural Science Foundation of Tianjin, China (Grant No. 15JCYBJC21200), the Key Laboratory of Optical Information Technical Science, Ministry of Education of China (Grant No. 2017KFKT015), and the Fundamental Research Fund for the Central Universities, China.

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施引文献

图 1 钝化接触太阳电池结构及载流子输运方式^[13]

Fig. 1. Passivated contact solar cell structure and carrier transport mode^[13].

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图 2 能带结构示意图

Fig. 2. energy band structure diagram.

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图 3 NiO/c-Si/TiO₂结构太阳电池示意图^[9]

Fig. 3. Schematics of the NiO/c-Si/TiO₂ solar cell structure^[9].

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图 4 (a) MoO_x/c-Si异质结太阳电池结构的示意图; (b)通过扫描电子显微镜成像的横截面图^[16]

Fig. 4. (a) Schematics of the MoO_x/n-Si heterojunction solar cell structure; (b) cross section imaged by scanning electron microscopy^[16].

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图 5 全背接触结构的太阳电池示意图^[10]

Fig. 5. Schematics of the full back contact solar cell structure^[10].

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图 6 (a)BackPEDOT太阳电池正面; (b)BackPEDOT太阳电池横截面示意图^[39]

Fig. 6. (a)BackPEDOT solar cell front; (b) schematic cross-section of the BackPEDOT solar cell^[39].

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图 7 MLBC太阳电池结构^[11]

Fig. 7. The structure of MLBC solar cell^[11].

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图 8 使用MoO_x作为空穴选择性接触的硅异质结电池结构　(a)n-a-Si:H作为电子选择性接触; (b)ZnO:B作为电子选择性接触^[47]

Fig. 8. Silicon heterojunction cell structure using MoO_x as hole selective contact; (a) n-a-Si:H as electron selective contact; (b) ZnO:B as electron selectivecontact^[47].

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图 9 采用MoO_x作为空穴选择性接触, 分别n+-a-Si:H和ZnO:B作为电子选择性接触的硅异质结电池特性　(a)J-V曲线; (b)EQE曲线^[47]

Fig. 9. Characteristics of silicon heterojunction cells with MoO_x as hole selective contact, n+-a-Si:H and ZnO:B as electron selective contact respectively: (a) J-V curve; (b) EQE curve^[47].

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图 10 (a)在c-Si上沉积MoO_x薄膜的横截面图像; (b)MoO_x和c-Si的交界处图像; (c)EDS线扫描区域的横截面STEM图像; (d)使用EDS线测量每个元素的组成分布, 显示在MoO_x和c-Si之间形成薄的SiO_x层^[35]

Fig. 10. (a) The image of an as-deposited MoO_x film on c-Si; (b) the image of the MoO_x and c-Si interface; (c) cross-sectional STEM image for the region of the EDS line scan; (d) compositional distribution of each element measured using the EDS line scan showing a thinSiO_x layer formed between the MoO_x and the c-Si^[35].

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表 1 基于TMO载流子选择性接触的硅异质结太阳电池研究现状

Table 1. Summary of Silicon Heterojunction Solar Cells Based on TMO Carrier Selective Contact.

Device Architecture	J_sc/mA·cm^-2	V_oc/mV	FF	Efficiency/%	Reference(Year)
MoO_x/nc-Si/n a-Si:H	37.8	580	65	14.3	Battaglia et al.^[16](2014)
MoO_x/i a-Si:H/c-Si/i a-Si:H/n a-Si:H	38.6	725.4	80.36	22.5	Jonas et al.^[26](2015)
p⁺-Si/p-c-Si/MoO_x	37	616	72	16.4	Bullock et al.^[43](2015)
p⁺-Si/n-c-Si/TiO₂	39.2	639	79.1	19.8	Yang et al.^[44](2015)
MoO_x/a-Si:H(i)/c-Si/a-Si:H(i)/LiF_x	37.07	716.4	73.15	19.42	Bullock et al.^[8](2016)
MoO_x/ia-Si:H/nc-Si/ia-Si:H/n a-Si:H	39.4	711	67.2	18.8	Battaglia et al.^[17](2016)
V₂O_x/c-Si/ n a-Si:H	34.4	606	75.3	15.7	Gerling et al.^[15](2016)
MoO_x/c-Si/ n a-Si:H	34.1	581	68.8	13.6	Gerling et al.^[15](2016)
WO_x/c-Si/ n a-Si:H	33.3	577	65	12.5	Gerling et al.^[15](2016)
p⁺-Si/n-c-Si/SiO₂/TiO₂	39.5	650	80	20.5	Yang et al.^[45](2016)
V₂O_x /Au /V₂O_x	38.7	651	75.49	19.02	Wu et al.^[11](2017)
p⁺-Si/n-c-Si/MgO_x	39.5	628	80.6	20	Wan et al.^[46](2017)
MoO_x/i a-Si:H/c-Si/i a-Si:H/BZO	38.1	599	72.7	16.6	Wang et al.^[47](2017)
MoO_x/a-Si:H(i)/c-Si/a-Si:H(i)/TiO_x/LiF	38.4	706	76.2	20.7	Bullock et al.^[32](2018)

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