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不连续Co/SiO2多层膜的结构及其输运性质的研究

葛世慧 刘春明 寇晓明 姜丽仙 李斌生 李成贤

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不连续Co/SiO2多层膜的结构及其输运性质的研究

葛世慧, 刘春明, 寇晓明, 姜丽仙, 李斌生, 李成贤

Study on the structure and transport properties of discontinuous Co/SiO2 multilayers

Ge Shi-Hui, Liu Chun-Ming, Kou Xiao-Ming, Jiang Li-Xian, Li Bin-Sheng, Li Cheng-Xian
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  • 用射频磁控溅射方法制备了系列Co/SiO2不连续磁性金属绝缘体多层膜(DMIM) .经研究发现:对[SiO2(2.4 nm)/Co(t)]20体系,在Co层厚度小于2.5 nm时,Co层由连续变为不连续;Co层不连续时,其导电机理为热激发的电子隧穿导电,lnR与T-1/2接近正比关系; 隧道磁电阻(TMR)在Co层厚度为1.4 nm时出现极大值-3%.DMIM 的性质 不仅与磁性金属层厚度密切相关,而且与绝缘层厚度有密切的关系.在固定Co层厚度为 1.9 nm的情况下,研究了TMR随SiO2层厚度的变化
    In this paper, charge storage and its dynamics in positively corona char ged polytetrafluoroethylene(PTFE) film electrets have been studied. It is foun d that from room temperature to 100℃ and from about 150℃, especially from 180 ℃ to higher temperatures, slow retrapping controls the transport of detrapped c h arge; however, from about 100℃ to 150℃ the fast retrapping plays a dominant ro le. The increase of the initial surface potential will lead to a significant decay of charge density, so by means of properly controlling the charging parameter an d the heat treatment process we can get positively and negatively charged PTFE f ilm electrets with the same charge density, which not only have a similar charge storage life but also an outstanding charge storage stability. 
    • 基金项目: 国家自然科学基金(批准号:59971023)资助的课题.
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  • 文章访问数:  6580
  • PDF下载量:  687
  • 被引次数: 0
出版历程
  • 收稿日期:  2003-10-20
  • 修回日期:  2004-01-18
  • 刊出日期:  2004-05-05

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