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中国物理学会期刊

射频磁控溅射沉积的ZnO薄膜的光致发光中心与漂移

CSTR: 32037.14.aps.53.867

Photoluminescence centers and shift of ZnO films deposited by rf magnetron sputtering

CSTR: 32037.14.aps.53.867
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  • 利用射频磁控溅射法在n型单晶硅衬底上制备了ZnO薄膜.通过改变源气体中氩气和氧气的流量比制备了具有不同化学计量比的ZnO薄膜,并且将它们在真空中作了加热后处理来研究ZnO薄膜的光致发光特性.这些在常温衬底上沉积的薄膜可发出强的蓝光,其峰位会随氧流量的减少而发生红移.从导带底到锌缺陷形成的受主能级之间的跃迁可能是产生蓝光发射的原因.

     

    ZnO films deposited by rf magnetron sputtering with different stoichimetries were made by varing Ar/O2 flow rate during the depositions, and annealed in vacuum. The photoluminescence measurements show that the films have strong blue emission. As O2 gas flow decreases, the blue emission peak moves to long wavelength side. The blue emission may correspond to the electron transition from the bottom of the conduction band to the acceptor level composed of zinc defects.

     

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