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对文献[1]中提出的导电模型进行了定量处理。该模型能解释ZnO压敏电阻的V-l曲线、C-V(偏压、DC)曲线、退化现象等。更重要的是它还能预言颗粒-颗粒结的显微结构参数、电性能参数对压敏电阻电性能的影响规律,为压敏电阻材料设计提供了理论依据。The model of conduction proposed in the previous paper is treated quantitatively. This model is suitable for the explanation of V-I curve, C-V(DG) curve, and degradation phenomena of ZnO varistors. In addition, this model can also predict the influence of the microstrueture parameter and the elec trical characteristics parameter of grain-grain contact on the electrical characteristics of ZnO varistors. It provides a basis of the theory for materials design of ZnO varistors.
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