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本文用化学腐蚀方法, 从含有漩涡缺陷的原生CZ硅单晶中分离出尺寸在1000--6000埃间的氧沉淀, 制成萃取复型样品,用T E M 对氧沉淀作微区电子衍射分析. 同时, 观察硅薄膜中漩涡缺陷的TEM 象, 确定了二者的对应关系. 结果表明, 构成漩涡缺陷的氧沉淀主要是呈方形片的热液石英(keatite, siliea k) 及少量呈六角片的。方英石(a-cristobalite ), 沉淀片周边沿 方向, 惯习面前者的为{ 100} , 后者的为{ 1 1 1}. 样品的红外吸收光谱表明, 方片状热液石英沉淀可能与1 2 2 4 (1/cm ), 吸收峰相对应.The oxide precipitates (1000-6000A) were separated from as-grown CZ silicon crystal containing the swirl defects by means of chemical etching method. The selected-area electron diffraction analysis of the precipitates, which had been prepareted into the extraction replica specimens, was carried out in TEM. Simultaneously, the morphology of the swirl defects in silicon thin foil specimens was observed with TEM. Thereby, the corresponding relation between the particles in the extracrion replicas and the swirl defects in the silicon thin foils was established. It was concluded that a great number of the swirl defects are keatite (silica k) in the form of square-shaped platelets with {100} habit planes and sides in parallel with direction, and a small part of the swirl defects are a-cristobalite in the form of hexagon-shaped platelets with {111) habit planes and sides in parallel with . IR absorption spectra of as-grown CZ silicon samples showed that the square plate-shaped keatite were probably associated with the absorptior band at 1224 1/cm.
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