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一价铝离子能级结构的多通道量子亏损理论分析

杨力

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一价铝离子能级结构的多通道量子亏损理论分析

杨力

AN ANALYSIS OF ENERGY LEVEL STRUCTURES FOR SINGLE IONIZED ALUMINUM BY MQDT

YANG LI
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  • 利用多通道量子亏损理论(MQDT)对一价铝离子(AIII)的各受干扰序列:3sns 1S0,3snp 3P0,1,2O,1P1O,3snd 1D2和3snf3F2,3,4O的能级结构进行理论分析。结果表明:前两个序列所受到的干扰较弱,后三个序列则受到了来自干扰态3p4s 1P1O,3p2 1D2和3p3d3F2,3,4O的强烈干扰,而3snf 1F3O序列则受到来自电离限上方干扰态的影响。利用获得的MQDT参数推算出3p3d 1F3O干扰态位于电离限上方5613cm-1处,这一结果与其他作者的预言相符合。
    All the perturbed Rydberg series, i. e., 3sns 1S0,3snp 1P1O, 3P0,1,2O,3snd 1D2 and 3snf 3F2,3,4O, have been studied by the multichannel quantum defect theory (MQDT). The analysis show that, the first two series are weakly disturbed, the rest, however, are strongly perturbed by the core-excited states: 3p4s 1P1O,3p2 1D2 and 3p3d 3F2,3,4O, respectively and 3snf 1F3O by 3p3d 1F3O which may be located 5613 cm-1 above the first ionizing potential according to our estimation. This prediction agrees with those made by other authors.
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出版历程
  • 收稿日期:  1991-01-14
  • 刊出日期:  1991-06-05

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