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采用在热ＨＮＯ3中对多孔度较低的多孔硅样品进行氧化的方法，我们获得了稳定性和均匀性都较好的多孔硅样品。这是一种不同于快速热氧化且更方便易行的方法。另外还用ＳＥＭ和ＦＴＩＲ对其特性进行了研究。Porous silicon of low porosity was oxidized in boiling HNO3 solution. Photo-luminescence, microluminescence and SEM studies show that the stability and the uniformity of the sample were greatly improved by such a treatment. This is a new method much easier to control than rapid thermal oxidation.
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