-
报道了选用厚度为0.05mm的不锈钢箔作衬底,B掺杂P型氢化纳米硅作窗口层,制备成功开路 电压和填充因子分别达到090V和070的nip非晶硅基薄膜单结太阳电池.UV-VIS透射谱和 微区Raman谱证实所用p层具有典型氢化纳米硅的宽能隙和含有硅结晶颗粒的微结构特征.明 确指出导致这种氢化纳米硅能隙展宽的物理机制是量子尺寸效应.
-
关键词:
- 氢化纳米硅 /
- 量子尺寸效应 /
- a-Si∶H太阳电池
The successful application of boron_doped hydrogenated nanocrystalline silicon a s window layer in a-Si∶H nip solar cells on stainless steel foil with a thickne ss of 005mm is reported. Open circuit voltage and fill factor of the fabricate d solar cell were 090V and 070 respectively. The optical and structural prop erties of the p-layers have been investigated by using UV-VIS and Raman spectros copy. It is confirmed that the p-layer is hydrogenated nanocrystalline silicon w ith a wide optical gap due to quantum size effect.
计量
- 文章访问数: 6766
- PDF下载量: 727
- 被引次数: 0