搜索

x

留言板

尊敬的读者、作者、审稿人, 关于本刊的投稿、审稿、编辑和出版的任何问题, 您可以本页添加留言。我们将尽快给您答复。谢谢您的支持!

姓名
邮箱
手机号码
标题
留言内容
验证码

直接键合InP-GaAs结构界面的特性研究

劳燕锋 吴惠桢

引用本文:
Citation:

直接键合InP-GaAs结构界面的特性研究

劳燕锋, 吴惠桢

Study on infrared absorption of interfaces in direct wafer bonded InP-GaAs structures

Lao Yan-Feng, Wu Hui-Zhen
PDF
导出引用
  • 通过对直接键合InP-GaAs结构的红外吸收光谱分析以及断面扫描电子显微镜观察发现,样品制备过程中不均匀的外加压强导致InP-GaAs交界面局部出现了不连续过渡的空间层,实验上将熔融石蜡渗透并被填充到该空间层,利用其对3.509μm波长光的强烈吸收特性可表征 这种局部的键合不连续区域,二维扫描测试样品不同区域的吸收谱得到3.509μm波长吸收强 度等值线图,从而描绘出外加压强的不均匀分布.实验上通过改进键合装置的施压均匀性, 得到了连续过渡界面且均匀键合的InP-GaAs结构,利用这种均匀键合技术有望制备大尺寸器 件例如光学微腔等.
    Direct wafer bonded InP-GaAs structures are studied by FTIR infrared absorbance spectra and FESEM cross-sectional observations. Experiments show that the non-uniformity of bonding pressure during the fabricating step results in the appearance of a spacer-layer at the InP-GaAs interface. By melting wax and filling it into this spacer-layer, locally unbonded areas can be characterized upon the opt ical absorbance peaks at 3.509 μm. The 3.509 μm absorbance-intensity mapping images the non-uniform distribution of bonding pressure, which was obtained by t wo-dimensionally scanning measurement of infrared spectra of samples. Uniformly bonded InP-GaAs structures with uninterrupted interface are fabricated after imp roving the uniformity of pressure of fixture, which will be prospect of preparin g for large scale wafer bonding structures such as optical micro-cavity structur es.
    • 基金项目: 国家重点基础研究发展计划(批准号:2003CB314903)资助的课题.
计量
  • 文章访问数:  7124
  • PDF下载量:  1359
  • 被引次数: 0
出版历程
  • 收稿日期:  2004-12-19
  • 修回日期:  2005-02-28
  • 刊出日期:  2005-09-20

/

返回文章
返回