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Ti1-x(Hf0.919Zr0.081)xNiSn的制备及热电性能

刘海强 唐新峰 王 焜 宋 晨 张清杰

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Ti1-x(Hf0.919Zr0.081)xNiSn的制备及热电性能

刘海强, 唐新峰, 王 焜, 宋 晨, 张清杰

Preparation and thermoelectric properties of Ti1-x(Hf0.919Zr0.081)xNiSn

Liu Hai-Qiang, Tang Xin-Feng, Wang Kun, Song Chen, Zhang Qing-Jie
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  • 采用固相反应法合成了单相的Ti1-x(Hf0.919Zr0.081) xNiSn (x=0.00—0.15),并用放电等离子烧结方法制备出密实块体材料. 研究 了Hf和Zr同时在Ti位上的等电子合金化对Ti基半Heusler化合物热电性能的影响规律. 结果 表明:少量的Hf和微量的Zr在Ti位上的等电子合金化,显著地降低了体系的热导率κ,同时 显著地提高了体系的Seebeck系数α. 组成为Ti0.85
    Single-phase Ti1-x(Hf0.919Zr0.081)xN iSn (x=0.00—0.15) compounds were synthesized by solid-state reaction and high- density polycrystalline bulk material was prepared by spark plasma sintering (SP S). The effect of Hf and Zr substitution for Ti on the thermoelectric propertie s of TiNiSn half-Heusler compounds were investigated. It was shown that the subs titution of a small amount Hf and trace Zr for Ti resulted in significant reduct ion of the thermal conductivity and remarkable enhancement of the Seebeck coeff icient. As a result, the dimensionless figure of merit ZT of Ti0.85(H f0.919Zr0.081)0.15NiSn reached a high maximum v alue of 0.56 at 700K and the enhancement of ZT was 190%—310% at the same temper ature compared with ternary TiNiSn compounds.
    • 基金项目: 国家自然科学基金重大国际合作项目(批准号:50310353)资助的课题.
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  • PDF下载量:  1310
  • 被引次数: 0
出版历程
  • 收稿日期:  2005-07-22
  • 修回日期:  2005-10-27
  • 刊出日期:  2006-02-05

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