In掺杂对n型方钴矿化合物的微结构及热电性能的影响规律

周龙; 李涵; 苏贤礼; 唐新峰

doi:10.7498/aps.59.7219

摘要

用熔融退火法结合放电等离子烧结(SPS)技术成功制备了具有不同 In含量的InxCo4Sb12(x=0.1—0.4)方钴矿化合物.X射线衍射分析和扫描电镜分析结果表明,当In的掺杂量超过一定值时,化合物中会原位析出纳米InSb的第二相,且其含量会随In掺杂量的增加而增大.研究结果表明,InSb第二相的存在增大了化合物的功率因子,降低了化合物的晶格热导率,显著提高了化合物的热电性能.在温度为800 K时,In

关键词:

InSb /
CoSb3 /
热电性能

Abstract

Skutterudite compounds InxCo4Sb12(x=0.1—0.4) have been synthesized by a melt-quench-anneal-spark plasma sintering method. x-ray diffraction (XRD) and filed emission scanning electron microscopy (FESEM) results show that doping of In results in a nano structured InSb phase distributed in the grain boundaries when the content of In exceeds its filling fraction limit in the skutterudites. Furthermore, the content of InSb increases with increasing In content. Our research indicates that the existence of nanostructured secondary phase InSb increases the power factor, decreases the lattice thermal conductivity, and therefore remarkably improves the thermoelectric properties of the compounds. The highest thermoelectric figure of merit ZT=1.21 is achieved at 800 K in the In0.35Co4Sb12 compound.

Keywords:

作者及机构信息

1.
武汉理工大学材料复合新技术国家重点实验室,武汉 430070

基金项目: 国家重点基础研究发展计划(批准号:2007CB607501)、国家自然科学基金重点项目(批准号:50731006)和国家111计划(批准号:B07040)资助的课题.

Authors and contacts

1.
State Key Laboratory of Advanced Technology for Material Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, China

参考文献

[1]	Nolas G S, Cohn J L, Slack G A 1998 Phys. Rev. B 58 164
[2]	Chen B X, Xu J H, Uher C 1997 Phys. Rev. B 55 1476
[3]	Luo P F, Tang X F, Li H, Liu T X 2004 Acta Phys. Sin. 53 3234 (in Chinese) [罗派峰、唐新峰、李涵、刘桃香 2004 物理学报 53 3234]
[4]	Li H, Tang X F, Zhao W Y, Zhang Q J 2006 Acta Phys. Sin. 55 6505 (in Chinese) [李涵、唐新峰、赵文俞、张清杰 2006 物理学报 55 6505]
[5]	Mallik R C, Stiewe C, Karoinski G, Hassdorf R, Muller E 2009 J. Electron. Mater. 38 1338
[6]	He T, Chen J Z, Rosenfeld H D, Subramanian M A 2006 Chem. Mater. 18 759
[7]	Shi X, Kong H, Li C P, Uher C, Yang J, Salvador J R, Wang H, Chen L, Zhang W 2008 Appl. Phys. Lett. 92 182101
[8]	Su X L 2009 M. S. Dissertation (Wuhan: Wuhan University of Technology) (in Chinese) [苏贤礼 2009 硕士学位论文 (武汉: 武汉理工大学)]
[9]	Liu E K, Zhu B S, Luo J S 1994 Semiconductor Physics (Beijing: Defense Industrial Press) pp289—290 (in Chinese) [刘恩科、朱秉升、罗晋生 1994 半导体物理学 (北京: 国防工业出版社) 第289—290页]
[10]	Pei Y Z, Chen L D, Zhang W, Shi X, Bai S Q, Mei Z G, Li X Y 2006 Appl. Phys. Lett. 89 221107
[11]	Pei Y Z, Bai S Q, Zhao X Y, Zhang W, Chen L D 2008 Solid State Sci. 10 1422
[12]	Chen L D, Kawahara T, Tang X F, Goto T, Hirai T, Dyck J S, Chen W, Uher C 2001 J. Appl. Phys. 90 1864

施引文献

[1]	Nolas G S, Cohn J L, Slack G A 1998 Phys. Rev. B 58 164
[2]	Chen B X, Xu J H, Uher C 1997 Phys. Rev. B 55 1476
[3]	Luo P F, Tang X F, Li H, Liu T X 2004 Acta Phys. Sin. 53 3234 (in Chinese) [罗派峰、唐新峰、李涵、刘桃香 2004 物理学报 53 3234]
[4]	Li H, Tang X F, Zhao W Y, Zhang Q J 2006 Acta Phys. Sin. 55 6505 (in Chinese) [李涵、唐新峰、赵文俞、张清杰 2006 物理学报 55 6505]
[5]	Mallik R C, Stiewe C, Karoinski G, Hassdorf R, Muller E 2009 J. Electron. Mater. 38 1338
[6]	He T, Chen J Z, Rosenfeld H D, Subramanian M A 2006 Chem. Mater. 18 759
[7]	Shi X, Kong H, Li C P, Uher C, Yang J, Salvador J R, Wang H, Chen L, Zhang W 2008 Appl. Phys. Lett. 92 182101
[8]	Su X L 2009 M. S. Dissertation (Wuhan: Wuhan University of Technology) (in Chinese) [苏贤礼 2009 硕士学位论文 (武汉: 武汉理工大学)]
[9]	Liu E K, Zhu B S, Luo J S 1994 Semiconductor Physics (Beijing: Defense Industrial Press) pp289—290 (in Chinese) [刘恩科、朱秉升、罗晋生 1994 半导体物理学 (北京: 国防工业出版社) 第289—290页]
[10]	Pei Y Z, Chen L D, Zhang W, Shi X, Bai S Q, Mei Z G, Li X Y 2006 Appl. Phys. Lett. 89 221107
[11]	Pei Y Z, Bai S Q, Zhao X Y, Zhang W, Chen L D 2008 Solid State Sci. 10 1422
[12]	Chen L D, Kawahara T, Tang X F, Goto T, Hirai T, Dyck J S, Chen W, Uher C 2001 J. Appl. Phys. 90 1864

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