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低工作电压聚噻吩薄膜晶体管

刘玉荣 陈伟 廖荣

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低工作电压聚噻吩薄膜晶体管

刘玉荣, 陈伟, 廖荣

Low-operating-voltage polymer thin-film transistors based on poly(3-hexylthiophene)

Liu Yu-Rong, Chen Wei, Liao Rong
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  • 以高掺杂Si单晶片作为衬底且充当栅电极,采用磁控溅射法在硅片上沉积HfTiO薄膜作为栅介质层,聚三己基噻吩(P3HT)薄膜作为半导体活性层,金属Au作为源、漏电极,并采用十八烷基三氯硅烷(OTS)对栅介质层表面修饰,在空气环境下成功地制备出聚合物薄膜晶体管(PTFT).PTFT器件测试结果表明,该晶体管在低的驱动电压(-2 cm2/V ·s.通过对金属-聚合物-氧化物
    Polymer-based thin film transistors (PTFTs) with poly(3-hexylthiophene) (P3HT) as semiconducting active layers are successfully fabricated on silicon substrates in air which are used as gate electrods. HfTiO film deposited by RF sputtering method is used as gate insulators,and gold metal is used as source and drain electrodes. The HfTiO surface is modified by using octadecyltrichlorosilane solution in the fabrication process. Experimental results indicate that the PTFTs show good saturation behaviors at low drive voltages (-2 cm2/V ·s. The frequency-dependence and hysteresis effect are observed in the C-V measurements for the metal-polymer-oxide-silicon (MPOS) capacitors,and discussed in detail to understand their physical mechanism.
    • 基金项目: 国家自然科学基金(批准号:845106410100257),广东省自然科学基金(批准号:8451064101000257)资助的课题.
    [1]

    Ryu G S,Choe K B,Song C K 2006 Thin Solid Films 514 302

    [2]

    Torsi L,Tafuri A,Cioffi N,Gallazzi M C,Sassella A,Sabbatini L,Zambonin P G 2003 Sensor Actuat. B 93 257

    [3]

    Zou J H,Lan L F,Xu R X,Yang W,Peng J B 2010 Acta Phys. Sin. 59 1275 (in Chinese) [邹建华、兰林峰、徐瑞霞、杨 伟、彭俊彪 2010 物理学报 59 1275]

    [4]

    Dunn L,Basu D,Wang L,Dodabalapur A,2006 Appl. Phys. Lett. 88 063507

    [5]

    Tao C L,Zhang X H,Dong M J,Liu Y Y,Sun S,Ou G P,Zhang F J,Zhang H L 2008 Chin. Phys. B 17 281

    [6]

    Yuan G C,Xu Z,Zhao S L,Zhang F J,Jiang W W,Huang J Z,Song D D,Zhu H N,Huang J Y,Xu X R 2008 Acta Phys. Sin. 57 5911 (in Chinese) [袁广才、徐 征、赵谡玲、张福俊、姜薇薇、黄金昭、宋丹丹、朱海娜、黄金英、徐叙瑢 2008 物理学报 57 5911]

    [7]

    Sirringhaus H,Tessler N,Friend R H 1999 Synth. Met. 102 857

    [8]

    Liu Y R,Wang Z X,Yu J L,Xu H H 2009 Acta Phys. Sin. 58 8566 (in Chinese) [刘玉荣、王智欣、虞佳乐、徐海红 2009 物理学报 58 8566]

    [9]

    Cho S,Lee K,Yuen J,Wang G M,Moses D,Heeger A J,Surin M,Lazzaroni R 2006 J. Appl. Phys. 100 14503

    [10]

    Tian X Y,Xu Z,Zhao S L,Zhang F J,Xu X R,Yuan G C Li J,Sun Q J,Wang Y 2009 Chin. Phys. B 18 5078

    [11]

    Kim J M,Lee J W,Kim J K,Ju B K,Kim J S,Lee Y H,Oh M H 2004 Appl. Phys. Lett. 85 6368

    [12]

    Hu W,Zhao Y,Hou J Y,Ma C S,Liu S Y 2007 Microelectron. J. 38 632

    [13]

    Bartic C,Jansen H,Campitelli A,Borghs S 2002 Org. Electron. 3 65

    [14]

    Wang G M,Moses D,Heeger A J 2004 J. Appl. Phys. 95 316

    [15]

    Majewski L A,Schroeder R,Grell M,Glarvey P A,Turner M L 2004 J. Appl. Phys. 96 5781

    [16]

    Raval H N,Tiwari S P,Navan R R,Mhaisalkar,Rao V R 2009 IEEE Electron Device Lett. 30 484

    [17]

    Nicollian E H,Brews J R 1982 MOS (Metal Oxide Semicon-ductor) Physics and Technology (New York:John Wiley and Sons,Inc.) p223

    [18]

    Schroder D K 1998 Semiconductor Material and Device Character-ization,2nd Edition (New York:John Wiley and Sons,Inc.) p376

  • [1]

    Ryu G S,Choe K B,Song C K 2006 Thin Solid Films 514 302

    [2]

    Torsi L,Tafuri A,Cioffi N,Gallazzi M C,Sassella A,Sabbatini L,Zambonin P G 2003 Sensor Actuat. B 93 257

    [3]

    Zou J H,Lan L F,Xu R X,Yang W,Peng J B 2010 Acta Phys. Sin. 59 1275 (in Chinese) [邹建华、兰林峰、徐瑞霞、杨 伟、彭俊彪 2010 物理学报 59 1275]

    [4]

    Dunn L,Basu D,Wang L,Dodabalapur A,2006 Appl. Phys. Lett. 88 063507

    [5]

    Tao C L,Zhang X H,Dong M J,Liu Y Y,Sun S,Ou G P,Zhang F J,Zhang H L 2008 Chin. Phys. B 17 281

    [6]

    Yuan G C,Xu Z,Zhao S L,Zhang F J,Jiang W W,Huang J Z,Song D D,Zhu H N,Huang J Y,Xu X R 2008 Acta Phys. Sin. 57 5911 (in Chinese) [袁广才、徐 征、赵谡玲、张福俊、姜薇薇、黄金昭、宋丹丹、朱海娜、黄金英、徐叙瑢 2008 物理学报 57 5911]

    [7]

    Sirringhaus H,Tessler N,Friend R H 1999 Synth. Met. 102 857

    [8]

    Liu Y R,Wang Z X,Yu J L,Xu H H 2009 Acta Phys. Sin. 58 8566 (in Chinese) [刘玉荣、王智欣、虞佳乐、徐海红 2009 物理学报 58 8566]

    [9]

    Cho S,Lee K,Yuen J,Wang G M,Moses D,Heeger A J,Surin M,Lazzaroni R 2006 J. Appl. Phys. 100 14503

    [10]

    Tian X Y,Xu Z,Zhao S L,Zhang F J,Xu X R,Yuan G C Li J,Sun Q J,Wang Y 2009 Chin. Phys. B 18 5078

    [11]

    Kim J M,Lee J W,Kim J K,Ju B K,Kim J S,Lee Y H,Oh M H 2004 Appl. Phys. Lett. 85 6368

    [12]

    Hu W,Zhao Y,Hou J Y,Ma C S,Liu S Y 2007 Microelectron. J. 38 632

    [13]

    Bartic C,Jansen H,Campitelli A,Borghs S 2002 Org. Electron. 3 65

    [14]

    Wang G M,Moses D,Heeger A J 2004 J. Appl. Phys. 95 316

    [15]

    Majewski L A,Schroeder R,Grell M,Glarvey P A,Turner M L 2004 J. Appl. Phys. 96 5781

    [16]

    Raval H N,Tiwari S P,Navan R R,Mhaisalkar,Rao V R 2009 IEEE Electron Device Lett. 30 484

    [17]

    Nicollian E H,Brews J R 1982 MOS (Metal Oxide Semicon-ductor) Physics and Technology (New York:John Wiley and Sons,Inc.) p223

    [18]

    Schroder D K 1998 Semiconductor Material and Device Character-ization,2nd Edition (New York:John Wiley and Sons,Inc.) p376

计量
  • 文章访问数:  6947
  • PDF下载量:  712
  • 被引次数: 0
出版历程
  • 收稿日期:  2010-01-18
  • 修回日期:  2010-02-22
  • 刊出日期:  2010-11-15

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