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通过制作亲碳性铟锡氧化物(ITO)/Ti复合电极,改善移植型碳纳米管(CNT)冷阴极的导电电极与CNT膜层之间附着性能,从而消除CNT与电极间的界面势垒和非欧姆接触对CNT阴极场发射均匀性和稳定性的影响.采用磁控溅射技术和丝网印刷工艺制作了ITO/Ti基CNT阴极.用X射线衍射仪和场致发射扫描电子显微镜表征CNT阴极结构,结果显示热处理后的ITO/Ti基CNT阴极中可能有TiC相生成,从而使得导电电极与CNT形成有中间物的强作用体系.该体系降低甚至消除电极与CNT之间的界面势垒,增加了CNT与电极间形成欧姆接触的概率.用四探针技术分析电阻率,结果表明ITO/Ti复合电极具有电阻并联效果,CNT阴极导电性能提高.场致发射特性测试表明ITO/Ti基CNT阴极的场致发射电流达到384 μA/cm2,较普通ITO基CNT阴极的场致发射电流有显著提高,能够激发测试阳极发出均匀、稳定的高亮度荧光.制作ITO/Ti复合电极是实现场致发射稳定、均匀的低功耗CNT阴极的有效途径.Carbon nanotube (CNT) cathode with an indium tin oxide (ITO)/Ti composite electrode is successfully fabricated using both magnetron sputtering technology and screen-printed technology which can improve adhesive performance between electrode and CNT cathode of transplanted-type CNT cold cathode, thus eliminating the effects of interface barrier and non-ohmic contact on field emission uniformity and stability of CNT cathode. Microstrcture of ITO/Ti-based CNT cathode is studied by X-ray diffraction and field emission scanning electron microscopy. The results show that TiC phase forms in ITO/Ti-based CNT cathode, thereby a strong interaction system is created between CNT and Ti substrate which reduces, or even eliminates the interface barrier between electrode and CNT, and increases the probability of forming ohmic contact. The resistivity measurement by four probe technology shows that the ITO/Ti-based CNT cathode has performance of resistances in parallel and electric conductivity of CNT cathode increases. Characteristic test of ITO/Ti-based CNT cathode shows that field emission current reaches 384 μA/cm2 which significantly increases compared with that of ITO-based CNT cathode, and that the tested anode can be induced to emit stable, uniform and high luminance. So the ITO/Ti composite electrode is an effective way to make a CNT cathode with stable and uniform field emission and low power.
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Keywords:
- carbon nanotube /
- cold cathode /
- field emission /
- uniformity
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[1] Guo P S,Chen T,Cao Z Y,Zhang Z J,Chen Y W,Sun Z 2007 Acta Phys. Sin. 56 6705 (in Chinese) [郭平生、陈 婷、曹章轶、张哲娟、陈奕卫、孙 卓 2007物理学报 56 6705]
[2] Gu G R,Ito T 2009 Chin. Phys. B 18 4547
[3] Song J H,Zhang G M,Zhang Z X,Sun M Y,Xue Z Q 2004 Acta Phys. Sin. 53 4392 (in Chinese) [宋教花、张耿民、张兆祥、孙明岩、薛增泉 2004 物理学报 53 4392]
[4] Ma Y P,Shang X F,Gu Z Q,Li Z H,Wang M,Xu Y B 2007 Acta Phys. Sin. 56 6701 (in Chinese) [马燕萍、尚学府、顾智企、李振华、王 淼、徐亚伯 2007 物理学报 56 6701]
[5] Park J H,Son G H,Moon J S,Han J H,Berdinsky A S,Kuvshinov D G,Yoo J B,Park C Y 2005 J. Vac. Sci. Technol. B 23 749
[6] Park G G,Sohn Y J,Yim S D,Yang T H,Yoon Y G,Lee W Y,Eguchi K,Kim C S 2006 J. Power Sour. 163 113
[7] Bachtold A,Henny M,Terrier C,Strunk C,Schonenberger C 1998 Appl. Phys. Lett. 73 274
[8] Xue Y Q,Datta S 1999 Phys. Rev. Lett. 83 4844
[9] Tombler T W,Zhou C W,Alexseyev L,Kong J,Dai H J,Liu L,Jayanthi C S,Tang M J,Wu S Y 2000 Nature 405 769
[10] Kong K,Han S,Ihm J 1999 Phys. Rev. B 60 6074
[11] Menon M,Andriotis A N,Froudakis G E 2000 Chem. Phys. Lett. 320 425
[12] Andriotis A N,Menon M,Froudakis G E 2000 Appl. Phys. Lett. 76 3890
[13] Andriotis A N,Menon M 1999 Phys. Rev. B 60 4521
[14] Andriotis A N,Menon M,Froudakis G E,Lowther J E 1999 Chem. Phys. Lett. 301 503
[15] Tachibana T,Williams B E,Glass J T 1992 Phys. Rev. B 45 11975
[16] Qin Y X,Hu M 2008 Appl. Surf. Sci. 254 3313
[17] Qin Y X,Hu M 2008 Acta Phys. Sin. 57 3698 (in Chinese) [秦玉香、胡 明 2008 物理学报 57 3698]
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