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37BiScO3-63PbTiO3铁电陶瓷的极化翻转行为研究

余罡 董显林 王根水 陈学锋 曹菲

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37BiScO3-63PbTiO3铁电陶瓷的极化翻转行为研究

余罡, 董显林, 王根水, 陈学锋, 曹菲

Ferroelectric polarization reversal behavior in 63PbTiO3-37BiScO3 bulk ceramics

Yu Gang, Dong Xian-Lin, Wang Gen-Shui, Chen Xue-Feng, Cao Fei
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  • 在正弦电场E=E0sin(2πft)加载下,通过改变电场E0(5—55 kV/cm)和频率f(0.1—100 Hz),测量了37BiScO3-63PbTiO3铁电陶瓷材料的电滞回线.数据拟合结果表明:在低电场和高电场阶段,剩余极化强度Pr的对数和矫顽场强Ec的对数都与电场强度E0的对数存在线性关系,而介于高电场与低电场之间则无线性关系存在,这种三阶段行为有别于现有的两阶段行为.这可归结于铁电陶瓷在不同的电场作用下铁电极化机理的不同.
    The ferroelectric hysteresis loops of 63PbTiO3-37BiScO3 ceramics are measured under sinusoidal electric field varying from 5 to 55 kV/cm in a frequency range from 0.1 to 100 Hz. The fitting results show that the logarithm of remanent polarization and the logarithm of coercive electric field are both linearly related to electric field in the first and third field regions, but not in the second region. The three-stage behavior is distinct from the existing two-stage behavior, and it can be attributed to the dependence of ferroelectric polarization behavior on field stage.
    • 基金项目: 国家高技术研究发展计划(批准号:2007AA03Z106, 2006AA03Z431)资助的课题.
    [1]

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    [2]

    Scott J F 1997 Thin Film Ferroelectric Materials and Devices (Boston: Kluwer Academic)

    [3]

    Zhang Y F, Wang C L, Zhao M L, Li J C, Zhang R Z 2009 Chin. Phys. B 18 1665

    [4]

    Chen X F, Li H M, Li D J, Cao F, Dong X L 2008 Acta Phys. Sin. 57 7298 (in Chinese) [陈学峰、 李华梅、 李东杰、 曹 菲、 董显林 2008 物理学报 57 7298]

    [5]

    Haertling G H 1999 J. Am. Ceram. Soc. 82 797

    [6]

    Scott J F 2000 Ferroelectric Memories (Berlin: Springer)

    [7]

    Li B S, Zhu Z G, Li G R, Yin Q R, Ding A L 2005 Acta Phys. Sin. 54 939 (in Chinese) [李宝山、 朱志刚、 李国荣、 殷庆瑞、 丁爱丽 2005物理学报 54 939]

    [8]

    Li Z Q, Chen M, Shen W B, Li J D 2001 Acta Phys. Sin. 50 2477 (in Chinese) [李智强、 陈 敏、 沈文彬、 李景德 2001 物理学报 50 2477]

    [9]

    Wang Y L 2003 Properties and Applications of Functional Ceramics (Beijing: Science Press) p16 (in Chinese) [王永龄 2003 功能陶瓷性能与应用 (北京:科学出版社) 第16页]

    [10]

    Yimnirun R, Laosiritaworn Y, Wongsaenmai S, Ananta S 2006 Appl. Phys. Lett. 89 162901

    [11]

    Yimnirun R, Wongmaneerung R, Wongsaenmai S, Ngamjarurojana A, Ananta S, Laosiritaworn Y 2007 Appl. Phys. Lett. 90 112908

    [12]

    Wongdamnern N, Ngamjarurojana A, Laosiritaworn Y, Ananta S, Yimnirun R 2009 J. Appl. Phys. 105 044109

    [13]

    Liu J M, Li H P, Ong C K, Lim L C 1999 J. Appl. Phys. 86 5198

    [14]

    Viehland D, Li J F 2001 J. Appl. Phys. 90 2995

    [15]

    Jullian C, Li J F, Viehland D 2003 Appl. Phys. Lett. 83 1196

    [16]

    Eitel R E, Randall C A, Shrout T R, Park S E 2002 Jpn. J. Appl. Phys. 41 2099

    [17]

    Chen S, Dong X L, Mao C L, Cao F 2006 J. Am. Ceram. Soc. 89 3270

    [18]

    Kamel T M, Kools F X N M, With G 2007 J. Eur. Ceram. Soc. 27 2471

    [19]

    Hlbling T, Sylemezo Agˇ lu N, Waser R 2002 J. Electroceram. 9 87

    [20]

    Zhou B, Zhan H, Liu G, Chen Y L 2009 Acta Phys. Sin. 58 2762 (in Chinese) [周 波、 詹 鹤、 刘 刚、 陈云琳 2009 物理学报 58 2762]

    [21]

    Chen J H, Qu S B, Wei X Y, Xu Z, Zhu L H 2009 Acta Phys. Sin. 58 554 (in Chinese) [陈建华、 屈绍波、 魏晓勇、 徐 卓、 朱林户 2009 物理学报 58 554]

    [22]

    Viehland D, Chen Y H 2000 J. Appl. Phys. 88 6696

    [23]

    Chen Y H, Viehland D 2000 Appl. Phys. Lett. 77 133

    [24]

    Randall C A, Eitel R E, Shrout T R, Woodward D I, Reaney I M 2003 J. Appl. Phys. 93 9271

    [25]

    Lente M H, Picinin A, Rino J P, Eiras J A 2004 J. Appl. Phys. 95 2646

    [26]

    Lente M H, Eiras J A 2001 J. Appl. Phys. 89 5093

  • [1]

    Uchino K 2000 Ferroelectric Devices (New York: Marcel Dekker)

    [2]

    Scott J F 1997 Thin Film Ferroelectric Materials and Devices (Boston: Kluwer Academic)

    [3]

    Zhang Y F, Wang C L, Zhao M L, Li J C, Zhang R Z 2009 Chin. Phys. B 18 1665

    [4]

    Chen X F, Li H M, Li D J, Cao F, Dong X L 2008 Acta Phys. Sin. 57 7298 (in Chinese) [陈学峰、 李华梅、 李东杰、 曹 菲、 董显林 2008 物理学报 57 7298]

    [5]

    Haertling G H 1999 J. Am. Ceram. Soc. 82 797

    [6]

    Scott J F 2000 Ferroelectric Memories (Berlin: Springer)

    [7]

    Li B S, Zhu Z G, Li G R, Yin Q R, Ding A L 2005 Acta Phys. Sin. 54 939 (in Chinese) [李宝山、 朱志刚、 李国荣、 殷庆瑞、 丁爱丽 2005物理学报 54 939]

    [8]

    Li Z Q, Chen M, Shen W B, Li J D 2001 Acta Phys. Sin. 50 2477 (in Chinese) [李智强、 陈 敏、 沈文彬、 李景德 2001 物理学报 50 2477]

    [9]

    Wang Y L 2003 Properties and Applications of Functional Ceramics (Beijing: Science Press) p16 (in Chinese) [王永龄 2003 功能陶瓷性能与应用 (北京:科学出版社) 第16页]

    [10]

    Yimnirun R, Laosiritaworn Y, Wongsaenmai S, Ananta S 2006 Appl. Phys. Lett. 89 162901

    [11]

    Yimnirun R, Wongmaneerung R, Wongsaenmai S, Ngamjarurojana A, Ananta S, Laosiritaworn Y 2007 Appl. Phys. Lett. 90 112908

    [12]

    Wongdamnern N, Ngamjarurojana A, Laosiritaworn Y, Ananta S, Yimnirun R 2009 J. Appl. Phys. 105 044109

    [13]

    Liu J M, Li H P, Ong C K, Lim L C 1999 J. Appl. Phys. 86 5198

    [14]

    Viehland D, Li J F 2001 J. Appl. Phys. 90 2995

    [15]

    Jullian C, Li J F, Viehland D 2003 Appl. Phys. Lett. 83 1196

    [16]

    Eitel R E, Randall C A, Shrout T R, Park S E 2002 Jpn. J. Appl. Phys. 41 2099

    [17]

    Chen S, Dong X L, Mao C L, Cao F 2006 J. Am. Ceram. Soc. 89 3270

    [18]

    Kamel T M, Kools F X N M, With G 2007 J. Eur. Ceram. Soc. 27 2471

    [19]

    Hlbling T, Sylemezo Agˇ lu N, Waser R 2002 J. Electroceram. 9 87

    [20]

    Zhou B, Zhan H, Liu G, Chen Y L 2009 Acta Phys. Sin. 58 2762 (in Chinese) [周 波、 詹 鹤、 刘 刚、 陈云琳 2009 物理学报 58 2762]

    [21]

    Chen J H, Qu S B, Wei X Y, Xu Z, Zhu L H 2009 Acta Phys. Sin. 58 554 (in Chinese) [陈建华、 屈绍波、 魏晓勇、 徐 卓、 朱林户 2009 物理学报 58 554]

    [22]

    Viehland D, Chen Y H 2000 J. Appl. Phys. 88 6696

    [23]

    Chen Y H, Viehland D 2000 Appl. Phys. Lett. 77 133

    [24]

    Randall C A, Eitel R E, Shrout T R, Woodward D I, Reaney I M 2003 J. Appl. Phys. 93 9271

    [25]

    Lente M H, Picinin A, Rino J P, Eiras J A 2004 J. Appl. Phys. 95 2646

    [26]

    Lente M H, Eiras J A 2001 J. Appl. Phys. 89 5093

计量
  • 文章访问数:  7011
  • PDF下载量:  803
  • 被引次数: 0
出版历程
  • 收稿日期:  2010-01-18
  • 修回日期:  2010-08-05
  • 刊出日期:  2010-06-05

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