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氧压对Ba0.6Sr0.4TiO3薄膜晶格常数的影响及BaTiO3/Ba0.6Sr0.4TiO3超晶格的制备

尚杰 张辉 曹明刚 张鹏翔

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氧压对Ba0.6Sr0.4TiO3薄膜晶格常数的影响及BaTiO3/Ba0.6Sr0.4TiO3超晶格的制备

尚杰, 张辉, 曹明刚, 张鹏翔

Influence of oxygen pressure on the lattice constants of Ba0.6Sr0.4TiO3 thin films and preparation of BaTiO3/Ba0.6Sr0.4TiO3 superlattices

Shang Jie, Zhang Hui, Cao Ming-Gang, Zhang Peng-Xiang
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  • 采用脉冲激光沉积(PLD)技术,经一系列的优化实验成功地制备了BaTiO3(BT)和Ba0.6Sr0.4TiO3(BST)单层膜.X射线衍射分析表明,在LaAlO3(001)单晶平衬底上生长的BT和BST薄膜都是沿[001]取向的近外延生长.且随着氧压在10-3—25 Pa范围内逐渐增大,BST薄膜的晶格常数与氧压之间近似满足Boltzmann函数关系.其次,在此优化条件下还
    Using pulsed laser deposition (PLD) technology, BaTiO3 (BT) and Ba0.6Sr0.4TiO3 (BST) single-layer films were successfully prepared through a series of optimization experiments. X-ray diffraction investigations indicated that BT and BST thin films were nearly (001)-epitaxially grown on LaAlO3 (001) substrates. And functional relation between the lattice constants of BST thin films and the oxygen pressure was close to Boltzmann function from 10-3 to 25 Pa. Then the high-quality BT/BST superlattices were also prepared under these optimal conditions. The surface topography measurement by atomic force microscopy (AFM) demonstrated that the root-mean-square (RMS) roughness of BT/BST superlattice was only 0.3048 nm. The surface smoothness has achieved the atomic scale. In addition, satellite peaks were clearly observed in the XRD spectrum. According to the position of satellite peaks that belong to (002) diffraction peak, the superperiod of superlattices was calculated and the deposition rates of BT and BST thin films were deduced. Finally, laser induced thermoelectric voltage (LITV) effect was measured for the first time in BT/BST superlattices grown on vicinal-cut single crystal substrates, which was not found in BT and BST single-layer films.
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    Horwitz J S, Chang W, Carter A C, Pond J M, Kirchoefer S W, Chrisey D B, Levy J, Hubert C 1998 in: O. Auciello (Ed.), Integrated Ferroelectrics, Proceedings of the 10th International Symposium on Integrated Ferroelectrics, Monterey, U.S.A, March 1—4 22 279

    [16]

    Jain M, Majumder S B, Katiyar R S, Miranda F A, Van Keuls F W 2003 Appl. Phys. Lett. 82 1911

    [17]

    Joshi P C, Cole M W 2000 Appl. Phys. Lett. 77 289

    [18]

    Kim W J, Chang W, Qadri S B, Pond J M, Kirchoefer S W, Chrisey D B, Horwitz J S 2000 Appl. Phys. Lett. 76 1185

    [19]

    Hubert C, Levy J, Rivkin T V, Carlson C, Parilla P A, Perkins J D, Ginley D S 2001 Appl. Phys. Lett. 79 2058

    [20]

    Kim W J, Wu H D, Chang W, Qadri S B, Pond J M, Kirchoefer S W, Chrisey D B, Horwitz J S 2000 J. Appl. Phys. 88 5448

    [21]

    Navi N, Kim H, Horwitz J S, Wu H D, Qadri S B 2003 Appl. Phys. A 76 841

    [22]

    Ding Y P, Wu J S, Meng Z Y, Chan H L, Choy Z L 2002 Materials Chemistry and Physics 75 220

    [23]

    Park B H, Gim Y, Fan Y, Jia Q X, Lu P 2000 Appl.Phy.Lett. 77 2587

    [24]

    Carlson C M, Rivkin T V, Parilla P A, Perking J D, Ginley D B, Kozyerv A B, Oshadchy V N, Pavlov A S 2000 Appl.Phy.Lett. 76 1920

    [25]

    Lebedev O I, Hamet J F, Van Tendeloo G , Beaumont V , Raveau B 2001 J . Appl. Phys .90 5261

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    Schuller Y K 1980 Phys. Rev. B 24 1597

  • [1]

    Cao W W, Lü T Q, Xie W G, Zhou J 2009 Chin. Phys. B 18 3054

    [2]

    Cui L, Lü T Q, Sun P N 2009 Chin. Phys. B 18 1658

    [3]

    Li J J, Yu J, Li J, Yang W M, Wu Y Y, Wang G B 2009 Acta Phys. Sin. 58 1246 (in Chinese) [李建军、于 军、李 佳、杨卫明、吴云翼、王耘波 2009 物理学报 58 1246]

    [4]

    Wang L H, Yu J, Wang Y B, Cao J X, Zhao S L 2008 Acta Phys. Sin. 57 1207 (in Chinese) [王龙海、于 军、王耘波、高俊雄、赵素玲 2008 物理学报 57 1207]

    [5]

    Aulika I, Pokorny J, Zauls V, Kundzins K, Rutkis M, Petzelt J 2008 Optical Materials 30 1017

    [6]

    Scarisoreanu N, Filipescu M, Ioachim A, Toacsan M I, Banciu M G, Nedelcu L, Dutu A, Buda M, Alexandru H V, Dinescu M 2007 Applied Surface Science 253 8254

    [7]

    Benoit G, Julie G, Emmanuel D, Pierre G, David W, Bernard A, Frédéric L, Roland P, Xavier G, Marc A 2007 Journal of the European Ceramic Society 27 3851

    [8]

    Scott J F, Annu 1998 Rev. Mater. Sci. 28 79

    [9]

    Takasu H 2000 J. Electroceram. 4 327

    [10]

    Cheng H F 1996 J. Appl. Phys. 79 7965

    [11]

    Lariviere G P, Frigerio J M, Rivory J, Abeles F 1992 Appl. Opt. 31 6509

    [12]

    Borgogno J P, Flory F, Roche P, Schmitt B, Albert G, Pelletier E, Macleod H A 1984 Appl. Opt. 23 3567

    [13]

    Ning Z Y, Jing M F, Xin Y, Ye C 2008 Thin Solid Film Materials and Preparation Technology (Beijing: Science Press) p108 (in Chinese) [宁兆元、江美福、辛 煜、叶 超 2008 固体薄膜材料与制备技术(北京:科学出版社) 第108页]

    [14]

    Wu H D, Barnes F S 1998 in: O. Auciello (Ed.), Integrated Ferroelectrics,Proceedings of the 10th International Symposium on Integrated Ferroelectrics,Monterey, U.S.A, March 1—4 22 291

    [15]

    Horwitz J S, Chang W, Carter A C, Pond J M, Kirchoefer S W, Chrisey D B, Levy J, Hubert C 1998 in: O. Auciello (Ed.), Integrated Ferroelectrics, Proceedings of the 10th International Symposium on Integrated Ferroelectrics, Monterey, U.S.A, March 1—4 22 279

    [16]

    Jain M, Majumder S B, Katiyar R S, Miranda F A, Van Keuls F W 2003 Appl. Phys. Lett. 82 1911

    [17]

    Joshi P C, Cole M W 2000 Appl. Phys. Lett. 77 289

    [18]

    Kim W J, Chang W, Qadri S B, Pond J M, Kirchoefer S W, Chrisey D B, Horwitz J S 2000 Appl. Phys. Lett. 76 1185

    [19]

    Hubert C, Levy J, Rivkin T V, Carlson C, Parilla P A, Perkins J D, Ginley D S 2001 Appl. Phys. Lett. 79 2058

    [20]

    Kim W J, Wu H D, Chang W, Qadri S B, Pond J M, Kirchoefer S W, Chrisey D B, Horwitz J S 2000 J. Appl. Phys. 88 5448

    [21]

    Navi N, Kim H, Horwitz J S, Wu H D, Qadri S B 2003 Appl. Phys. A 76 841

    [22]

    Ding Y P, Wu J S, Meng Z Y, Chan H L, Choy Z L 2002 Materials Chemistry and Physics 75 220

    [23]

    Park B H, Gim Y, Fan Y, Jia Q X, Lu P 2000 Appl.Phy.Lett. 77 2587

    [24]

    Carlson C M, Rivkin T V, Parilla P A, Perking J D, Ginley D B, Kozyerv A B, Oshadchy V N, Pavlov A S 2000 Appl.Phy.Lett. 76 1920

    [25]

    Lebedev O I, Hamet J F, Van Tendeloo G , Beaumont V , Raveau B 2001 J . Appl. Phys .90 5261

    [26]

    Schuller Y K 1980 Phys. Rev. B 24 1597

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出版历程
  • 收稿日期:  2010-03-16
  • 修回日期:  2010-04-28
  • 刊出日期:  2011-01-15

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