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能带工程对射频功率SiGe异质结双极晶体管热性能的改善

肖盈 张万荣 金冬月 陈亮 王任卿 谢红云

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能带工程对射频功率SiGe异质结双极晶体管热性能的改善

肖盈, 张万荣, 金冬月, 陈亮, 王任卿, 谢红云

Effect of bandgap engineering on thermal characteristic of radiofrequency power SiGe heterojunction bipolar transistor

Xiao Ying, Zhang Wan-Rong, Jin Dong-Yue, Chen Liang, Wang Ren-Qing, Xie Hong-Yun
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  • 众所周知,基区"能带工程"可以改善Si1-xGe x 基区异质结双极晶体管(HBT)的直流、频率和噪声等特性,但"能带工程"对HBT热学特性的影响的研究还很少。本文基于三维热电反馈模型,分析了"能带工程"对射频功率SiGe HBT热性能的影响。考虑到电流增益随温度的变化以及发射结电压负温度系数,给出了器件热稳定所需最小镇流电阻(REmin)的表达式,在此基础上给出了非均匀镇流电阻的设计,进一步提高了SiGe HBT的热稳定性
    As is well known, direct-current (DC) characteristic, frequency characteristic and noise characteristic of SiGe heterojunction bipolar transistor(HBT) can be improved by "bandgap engineering"(by Ge composition). However, the effect of "bandgap engineering" on the thermal characteristic of HBT has not been reported. In this paper, the effect of "bandgap engineering" is analyzed by the use of 3D thermal-electric feedback model. Considering the temperature dependence of emitter junction voltage and current gain, the expression of the minimum emitter ballasting resistance (REmin), which is necessary for SiGe HBT thermal stability, is presented. Furthermore, non-uniform ballasting resistance design is given so as to further enhance the thermal stability of device. It is found that the surface temperature of the device decreases with the increase of Ge composition in SiGe base. This is because SiGe HBT internally possesses the thermal-electrical negative feedback. For the same dissipated power, the REmin decreases as Ge composition increases, which is beneficial to the improvment of the performance of radio frequancy(RF) power SiGe HBT. These results provide a good guide to further optimization of RF power SiGe HBT performance, especially thermal design.
    • 基金项目: 国家自然科学基金(批准号:60776051),北京市自然科学基金(批准号:4082007),北京市教委科技发展计划(批准号:KM200710005015,KM200910005001)资助的课题.
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  • [1]

    Comeau J P, Najafizadeh L, Andrews J M, Gnana A P, Cressler J D 2007 IEEE Microw. Wirel Compon. Lett. 17 349

    [2]

    Ma L, Gao Y 2009 Chin. Phys. B 18 303

    [3]

    Lin G J, Lai H K, Li C, Chen S Y,Yu J Z 2008 Chin. Phys. B 17 3479

    [4]

    Dong W F, Yang Q Q, Li J, Wang Q M, Chui Q, Zhou J M, Huang Q 1996 Chin. Phys. 5 456

    [5]

    Lai C J, Li Z H, Li Z J, Zhang B, Zhang Y R 2009 Chin. Phys. B 18 763

    [6]

    Hu H Y, Zhang H M, Dai X Y, Jia X Z, Cui X Y, Wang W, Ou J F, Wang X Y 2005 Chin. Phys. 14 1439

    [7]

    Cao Q J, Zhang Y M 2008 Chin. Phys. B 17 4622

    [8]

    Zhou S L,Huang H, Huang Y Q, Ren X M 2007 Acta Phys. Sin. 56 2890 (in Chinese) [周守利、黄 辉、黄永清、任晓敏 2007 物理学报 56 2890]

    [9]

    Vassighi A, Sachdev M 2006 IEEE Trans. on Device Mater. Reliab. 6 300

    [10]

    Liou J J, Liou L L, Huang C I 1994 IEEE Proc. Circuits Device Syst. 141 469

    [11]

    Shinohara Y, Ishikawa R, Honjo K 2008 IEEE Trans. Microw. Theory Tech. 56 747

    [12]

    Zhu Y, Twynam J K, Yagura M, Hasegawa M, Hasegawa T, Eguchi Y, Amano Y, Suematsu E, Sakuno K, Matsumoto N, Sato H, Hashizume N 1999 IEEE MTT-S International Microwave Symposium Digest Anaheim, USA, June 13—19, 1999 p431

    [13]

    Gao G B, Wang M Z, Gui X, Morkoc H 1989 IEEE Trans. on Electron. Devices 36 854

    [14]

    Hidaka O, Morizuka K,Mochizuki H 1995 Jpn. J. Appl. Phys. 34 886

    [15]

    Schuppen A, Gerlach S, Dietrich H, Wandrei D, Seiler U,Konig U 1996 IEEE Microw. Guid. Wave Lett. 6 341

    [16]

    Klaassen D B L, Slotboom J W, Degraaff H C 1992 Solid-State Electron 35 125

    [17]

    Zhang W R, Yang J W, Liu H J 2004 IEEE International Conference on Microwave and Milli-wave Technology Beijing, China, August 18—21, 2004 p594

    [18]

    Hower P L, Govil P K 1974 IEEE Trans. on Electron. Devices 21 617

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出版历程
  • 收稿日期:  2010-06-21
  • 修回日期:  2010-07-25
  • 刊出日期:  2011-02-05

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