高剂量As离子注入对高阻Si电学特性的影响

朱贺; 张兵坡; 王淼; 胡古今; 戴宁; 吴惠桢

doi:10.7498/aps.63.136803

摘要

为了实现低电阻率厚度为纳米级的红外探测器电极材料，通过离子注入的方法将高浓度的As掺入高阻单晶硅，并经过快速退火处理，获得了厚度～ 200 nm、电阻率为10-4Ω·cm的Si：As电极层. 原子力显微镜测试结果表明，离子注入的样品表面依然较平整，表面均方根粗糙度仅为0.5 nm. 使用聚焦离子束设备（FIB）制备高分辨透射电镜（HRTEM）样品，高浓度的As掺入虽然会损伤Si晶格、引入大量的缺陷，但是HRTEM观察表明合适的退火工艺能够使得完整晶格得到恢复，而且霍尔效应和扩展电阻的测量分析表明，用离子注入方法制备的Si：As层载流子浓度达到2.5×1020 cm-3、电子迁移率高于40 cm2/V·s，具有优异的电学性能，适合用作各种Si基光电器件的背电极.

关键词:

Abstract

To achieve nanoscale infrared photodetector electrodes with low resistivity, ion-implantation is used to implant high dose of As ion into high-resistivity silicon, and followed by rapid thermal annealing (RTA). A 200 nm thick Si:As layer with resistivity of 10-4 Ω · cm is obtained. Characterization by atomic force microscopy shows that the surfaces of the ion-implanted samples are smooth with a root-mean-square (RMS) coarseness of 0.5 nm. Although introduction of As ions destroys the lattice structure of crystalline silicon and causes a plenty of defects, proper annealing can restore the crystal lattice, as evidenced by the HRTEM observation of the annealed sample prepared by using focused ion beam (FIB) technology. Besides, the measurements of hall effect and spreading resistance indicate that the Si:As layer has good electrical properties including high carrier concentrations 2.5 × 1020 cm-3, high electron mobilities 40 cm2/V · s, and high electrical conductivities. The low resistivity Si:As material obtained is suitable to be used as the back electrodes of silicon-based optoelectronic devices.

Keywords:

作者及机构信息

1.
浙江大学物理系和硅材料国家重点实验室, 杭州 310027;

2.
中国科学院上海技术物理研究所, 红外物理国家重点实验室, 上海 200083

基金项目: 国家自然科学基金（批准号：61290305和11374259）资助的课题.

Authors and contacts

1.
Department of Physics and State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China;

2.
Shanghai Institute of Technical Physics, Chinese Academy of Sciences, State Key Laboratory of Infrared Physics, Shanghai 200083, China

Funds: Project supported by the the National Natural Science Foundation of China (Grant Nos. 61290305, 11374259).

参考文献

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[2]	Wei X D, Cai C F, Zhang B P, Hu L, Wu H Z, Zhang Y G, Feng J W, Lin J M, Lin C, Fang W Z, Dai N 2011 J. Infrared Millim. Waves 30 293 (in Chinese) [魏晓东, 蔡春峰, 张兵坡, 胡炼, 吴惠桢, 张永刚, 冯靖文, 林加木, 林春, 方维政, 戴宁 2011 红外与毫米波学报 30 293]
[3]	Meng Q R, Yu Q, Zhang L W, Lv Y Q 2012 Acta Phys. Sin. 61 226103 (in Chinese)[孟庆端, 余倩, 张立文, 吕衍秋 2012 物理学报 61 226103]
[4]	Rogalski A 2003 Prog. Quant. Electron 27 59
[5]	Rogalski A 2011 Infrared Phys. Technol. 54 136
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[7]	Patrashin M, Hiromoto N, Fouks B, Maslov I A, Ledenev V M 1999 J. Appl. Phys. 86 3797
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[15]	Xu D Q, Zhang Y M, Lou Y L, Tong J 2014 Acta Phys. Sin. 63 047501 (in Chinese)[徐大庆, 张义门, 娄永乐, 童军 2014 物理学报 63 047501]
[16]	Fulks R T 1981 Appl. Phys. Lett. 39 604
[17]	Pandey K, Erbil A, Cargill G, Boehme R, Vanderbilt D 1988 Phys. Rev. Lett. 61 1282
[18]	Xu R, Jia G, Liu C L 2014 Acta Phys. Sin. 63 078501 (in Chinese)[许蓉, 贾光, 刘昌龙 2014 物理学报 63 078501]
[19]	Parisini A, Bourret A, Armigliato A, Servidori M, Solmi S, Fabbri R, Regnard J R, Allain J L 1990 J. Appl. Phys. 67 2320
[20]	Lindhard J, Scharff M, Schidtt H E 1963 Mat. Fys. Medd. Dan. Vid. Selsk. 33 14
[21]	Kevin M, Klein C P, Al F Tasch 1992 IEEE T. Electron Dev. 39 1614
[22]	Suzuki K 2009 FUJITSU Sci. Tech. J. 46 307
[23]	Solmi S, Nobili D, Shao J 2000 J. Appl. Phys. 87 658
[24]	Nobili D, Celotti G, Solmi S 1983 J. EIectrochem. Soc.: Solid-State Science and Technology 130 922
[25]	Nobili D, Solmi S, Parisini A, Derdour M, Armigliato A, Moro L 1994 Phys. Rev. B 49 2477

施引文献

[1]	Jiang T, Cheng X A, Xu Z J, Lu Q S 2013 Acta Phys. Sin. 62 097303 (in Chinese)[江天, 程湘爱, 许中杰, 陆启生 2013 物理学报 62 097303]
[2]	Wei X D, Cai C F, Zhang B P, Hu L, Wu H Z, Zhang Y G, Feng J W, Lin J M, Lin C, Fang W Z, Dai N 2011 J. Infrared Millim. Waves 30 293 (in Chinese) [魏晓东, 蔡春峰, 张兵坡, 胡炼, 吴惠桢, 张永刚, 冯靖文, 林加木, 林春, 方维政, 戴宁 2011 红外与毫米波学报 30 293]
[3]	Meng Q R, Yu Q, Zhang L W, Lv Y Q 2012 Acta Phys. Sin. 61 226103 (in Chinese)[孟庆端, 余倩, 张立文, 吕衍秋 2012 物理学报 61 226103]
[4]	Rogalski A 2003 Prog. Quant. Electron 27 59
[5]	Rogalski A 2011 Infrared Phys. Technol. 54 136
[6]	Rogalski A 2007 Infrared Phys. Technol. 50 240
[7]	Patrashin M, Hiromoto N, Fouks B, Maslov I A, Ledenev V M 1999 J. Appl. Phys. 86 3797
[8]	Cardozo B L, Reichertz L A, Beeman J W, Haller E E 2005 Infrared Phys. Technol. 46 400
[9]	Szmulowicz F, Madarasz F L 1987 J. Appl. Phys. 62 2533
[10]	Guo H, Wang Y H, Zhang Y M, Qiao D Y, Zhang Y M 2009 Chin. Phys. B 18 4470
[11]	Guo H, Zhang Y M, Qiao D Y, Sun L, Zhang Y M 2007 Chin. Phys. B 16 1753
[12]	Nylandsted Larsen A, O'Raifeartaigh C, Barklie R C, Holm B, Priolo F, Franzo G, Lulli G, Bianconi M, Nipoti R, Lindner J K N, Mesli A, Grob J J, Cristiano F, Hemment P L F 1997 J. Appl. Phys. 81 2208
[13]	Lietoila A, Gibbons J F, Magee T J, Peng J, Hong J D 1979 Appl. Phys. Lett. 35 532
[14]	Qin X F, Liang Y, Wang F X, Li S, Fu G, Ji Y J 2011 Acta Phys. Sin. 60 066101 (in Chinese)[秦希峰, 梁毅, 王凤翔, 李双, 付刚, 季艳菊 2011 物理学报 60 066101]
[15]	Xu D Q, Zhang Y M, Lou Y L, Tong J 2014 Acta Phys. Sin. 63 047501 (in Chinese)[徐大庆, 张义门, 娄永乐, 童军 2014 物理学报 63 047501]
[16]	Fulks R T 1981 Appl. Phys. Lett. 39 604
[17]	Pandey K, Erbil A, Cargill G, Boehme R, Vanderbilt D 1988 Phys. Rev. Lett. 61 1282
[18]	Xu R, Jia G, Liu C L 2014 Acta Phys. Sin. 63 078501 (in Chinese)[许蓉, 贾光, 刘昌龙 2014 物理学报 63 078501]
[19]	Parisini A, Bourret A, Armigliato A, Servidori M, Solmi S, Fabbri R, Regnard J R, Allain J L 1990 J. Appl. Phys. 67 2320
[20]	Lindhard J, Scharff M, Schidtt H E 1963 Mat. Fys. Medd. Dan. Vid. Selsk. 33 14
[21]	Kevin M, Klein C P, Al F Tasch 1992 IEEE T. Electron Dev. 39 1614
[22]	Suzuki K 2009 FUJITSU Sci. Tech. J. 46 307
[23]	Solmi S, Nobili D, Shao J 2000 J. Appl. Phys. 87 658
[24]	Nobili D, Celotti G, Solmi S 1983 J. EIectrochem. Soc.: Solid-State Science and Technology 130 922
[25]	Nobili D, Solmi S, Parisini A, Derdour M, Armigliato A, Moro L 1994 Phys. Rev. B 49 2477

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