聚偏氟乙烯基复合材料储能特性优化策略

查俊伟; 查磊军; 郑明胜

doi:10.7498/aps.72.20222012

摘要

介质电容器具有充放电速率快、低损耗以及柔性易加工等优点, 广泛应用于电子电力系统中的关键储能器件, 但介质电容器储能密度较低, 难以适用于现阶段电气工程更高的应用需求, 聚偏氟乙烯(PVDF)基聚合物因具有较高的介电常数与较高的击穿强度得到广泛关注, 因此本文着重介绍了以PVDF为基体的储能复合材料, 归纳和讨论包括介电常数、击穿强度和充放电效率3个提高储能密度的机理及其优化策略. 最后对高储能PVDF基复合材料现阶段存在的问题以及将来所需要研究的重点进行总结与展望.

关键词:

Abstract

Dielectric capacitors have been widely used in crucial energy storage systems of electronic power systems because of their advantages such as fast charge discharge rates, long cycle lifetimes, low losses, and flexible and convenient processingc. However, the dielectric capacitors have lower energy storage densities than electrochemical energy storage devices, which makes them difficult to meet higher application requirements for electrical engineering at the present stage. Polyvinylidene fluoride (PVDF) based polymers show great potential in achieving improved energy storage properties, which is attributed to their high dielectric constants and high breakdown strengths. This work systematically reviews PVDF-based nanocomposites for energy storage applications. Dielectric constant, breakdown strength and charge discharge efficiency are three main parameters related to energy storage properties, which are proposed to discuss their mechanisms of action and optimization strategies. Finally, the key scientific problems of PVDF-based high energy storage composites are summarized and considered, and the future development trend of dielectric capacitors is also prospected.

Keywords:

作者及机构信息

1.
北京科技大学化学与生物工程学院, 北京　100083

2.
北京科技大学北京材料基因工程高精尖创新中心, 北京　100083

通信作者: 查俊伟, zhajw@ustb.edu.cn

作者简介:

查俊伟, 北京科技大学教授, 博导, 国家优秀青年科学基金获得者, 北京市科技新星计划及香江学者计划入选者, IET Fellow, IEEE Senior Member, 获2019年教育部自然科学一等奖及2021中国复合材料学会青年科学家奖. 长期从事电介质储能材料、绝缘导热、智能柔性电工材料等领域的应用基础研究工作, 在Adv Mater、Energy Environm Sci.等期刊共发表论文160篇, 其中SCI论文120余篇, 他引6800余次; 已授权发明专利13项; 合著英文书籍4部, 中文书籍1部. 现担任IET Nanodielectrics期刊主题编辑以及Energy & Environmental Materials、Chinese Physics Letters、Chinese Physics B、《物理学报》和《物理》等多个期刊客座主编、青年编委, CIGRE WG D1.73委员, IEEE/DEIS纳米电介质技术委员会委员, 中国复合材料学会介电高分子复合材料与应用专委会秘书长、青工委执行委员, 中国电工技术学会储能系统与装备专委会委员、工程电介质专委会委员及青工委先进储能科学与应用学组副主任等

基金项目: 国家自然科学基金(批准号: 51977114)资助的课题.

Authors and contacts

1.
School of Chemistry and Biological Engineering, University of Science and Technology Beijing, Beijing 100083, China

2.
Beijing Advanced Innovation Center for Materials Genome Engineering, University of Science and Technology Beijing, Beijing 100083, China

Corresponding author: Zha Jun-Wei, zhajw@ustb.edu.cn

Funds: Project supported by the National Natural Science Foundation of China (Grant No. 51977114).

文章全文 : translate this paragraph

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施引文献

图 1 介质电容器的应用

Fig. 1. Application of Dielectric Capacitors.

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图 2 D-E曲线示意图^[14]

Fig. 2. Schematic illustration of electric displacement (D)-electric field (E) loop ^[14].

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图 3 不同铁电结构电介质及其D-E曲线^[16]

Fig. 3. Dielectrics with different ferroelectric structures and their D-E curves^16].

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图 4 沿c轴观察的PVDF四种相的单胞^[28]

Fig. 4. Unit cells of four PVDF phases observed along the c-axis^28].

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图 5 (a) NH₂-GNDs/RGO/PVDF三元复合物制备流程; (b)不同PVDF基复合材料介电常数^[43]

Fig. 5. (a) NH₂-GNDs/RGO/PVDF ternary complex preparation process; (b) different PVDF-based composite dielectric constants^[43].

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图 6 (a) PDA表面改性减少漏电流示意图^[50]; (b)不同小分子改性剂改性后击穿强度^[52]

Fig. 6. (a) schematic diagram of PDA surface modification to reduce leakage current ^[50]; (b) breakdown strength after modification with different small molecule modifiers ^[52].

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图 7 (a) BTO@TO纳米纤维及其与聚合物复合材料示意图与元素图; (b) PVDF基复合材料能量密度; (c)P(VDF-HFP)基复合材料能量密度^[55,56]

Fig. 7. (a) schematic and elemental diagrams of BTO@TO nanofibers and their composites with polymers; (b) energy density of PVDF-based composites; (c)energy density of P(VDF-HFP)-based composites ^[55,56].

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图 8 复合材料阻挡效应模型示意图

Fig. 8. Schematic diagram of barrier effect model of composite material

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图 9 (a) PVDF/ P(VDF-TrFE-CFE)共混膜的储能密度与充放电效率^[69]; (b)不同钛酸锶钡含量下单层膜与3层膜介电损耗; (c) TNF介电损耗降低示意图^[76]

Fig. 9. (a) Energy storage density and charge/discharge efficiency of PVDF/ P(VDF-TrFE-CFE) blended films^[69]; (b) dielectric loss of monolayer and trilayer films with different barium strontium titanate content; (c) schematic diagram of TNF dielectric loss reduction ^[76]

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