转角半导体过渡金属硫族化物莫尔超晶格中的新奇物态

汤衍浩

doi:10.7498/aps.72.20222080

摘要

通过转角或晶格失配构造莫尔人工超晶格, 可以对二维材料的能带结构进行有效调控并产生平带, 为研究量子多体物理提供了全新的平台. 转角过渡金属硫族化物(TMDs)半导体莫尔超晶格中的平带存在于较大的转角范围, 并且具有自旋-能谷互锁的能带结构以及优异的光学特性, 受到了广泛的关注. 本文聚焦于转角TMDs半导体, 介绍了近年来实验上发现的多种新奇物态, 包括莫特绝缘态、广义维格纳晶体、非平庸拓扑态、莫尔激子等; 还进一步讨论了对这些新奇物态的调控及其机制, 并展望了莫尔超晶格这一新兴领域未来的研究方向.

关键词:

Abstract

Moiré superlattices formed by van der Waals materials with small lattice mismatch or twist angle open an unprecedented approach to generate flat bands that don’t exist in the “parent” materials, which provides a controllable platform for exploring quantum many body physics. Owing to the wide angle range for the existence of flat bands, as well as the valley-spin-locking band structure and the excellent optical properties, twisted semiconducting transition metal dichalcogenides (TMDs) heterostructures have recently attracted lots of attention. In this review, we discuss the exotic states discovered in the twisted TMDs heterostructures, including Mott insulator, generalized Wigner crystals, topological non-trivial states, and moiré excitons, how to manipulate these exotic states and related mechanisms, and finally some perspectives on the opportunities and challenges in this field.

Keywords:

作者及机构信息

汤衍浩

浙江大学物理学院, 量子信息交叉中心, 省重点量子技术实验室, 杭州　310063

通信作者: 汤衍浩, yanhaotc@zju.edu.cn

基金项目: 国家重点基础研究发展计划(批准号: 2022YFA1405400, 2022YFA1402403)和国家自然科学基金(批准号: 12274365)资助的课题.

Authors and contacts

Tang Yan-Hao

Interdisciplinary Center for Quantum Information, Zhejiang Province Key Laboratory of Quantum Technology, Department of Physics, Zhejiang University, Hangzhou 310063, China

Corresponding author: Tang Yan-Hao, yanhaotc@zju.edu.cn

Funds: Project supported by the National Basic Research Program of China (Grant Nos. 2022YFA1405400, 2022YFA1402403) and the National Natural Science Foundation of China (Grant No. 12274365).

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施引文献

图 1 转角TMDs的晶格和能带结构0°转角 (a)和60°转角 (b) TMDs异质结的晶格结构示意图; (c)转角WSe₂/MoSe₂的能带图^[17]; (d)不同晶格位之间跃迁的动能随莫尔晶格常数的依赖关系^[17]

Fig. 1. Crystal structure and band structure in twisted TMDs: The crystal structure in 0° (a) and 60° (b) twisted TMDs heterobilayer; (c) the moiré band structure of low-energy electrons in 2° twisted WSe₂/MoSe₂ heterobilayer^[17]; (d) the kinetic energy of electrons hopping between different moiré sites as a function of the moiré lattice constant^[17].

下载: 全尺寸图片幻灯片

图 2 转角TMDs中的关联绝缘态的电荷分布示意图

Fig. 2. The schematic of the correlated states in twisted TMDs.

下载: 全尺寸图片幻灯片

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