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自2004年成功实现石墨烯的机械剥离制备以来, 二维材料凭借其独特的结构和物理化学性质, 在电子、光电和能源等领域引起了广泛的研究和发展. 在合成方法方面, 科研人员在传统的机械剥离、液相剥离、气相沉积、湿化学合成以及纳米材料相工程等基础上, 进一步推进了原子台阶方法, 用于制备高质量、大尺寸二维单晶材料(2DSCM). 本文详细介绍了近几年关于原子台阶调控2DSCM生长的代表性工作. 首先, 对研究背景进行了简要介绍; 然后, 讨论了2DSCM的主要合成方法, 并分析了外延制备非中心对称材料的困难及原因; 之后, 介绍了通过原子台阶辅助制备2DSCM的生长机制和最新进展, 分析了原子台阶调控2DSCM成核的理论基础及通用性, 并对未来实现大尺寸、方向可控的2DSCM的挑战和发展方向进行了预测; 最后, 系统展望了台阶方法制备大尺寸2DSCM在未来规模化芯片器件方向的潜在应用.Since the successful mechanical exfoliation of graphene in 2004, two-dimensional materials have aroused extensive research and fast developed in various fields such as electronics, optoelectronics and energy, owing to their unique structural and physicochemical properties. In terms of synthesis methods, researchers have made further advancements in the atomic step method, building upon traditional techniques such as mechanical exfoliation, liquid-phase exfoliation, vapor-phase deposition, wet chemical synthesis, and nanomaterial self-assembly. These efforts aim to achieve high-quality large-scale two-dimensional single crystal materials. In this article, the representative research on the growth of two-dimensional single crystal materials controlled by atomic steps in recent years is reviewed in detail. To begin with, the research background is briefly introduced, then the main synthesis methods of two-dimensional single crystal materials are discussed and the challenges and reasons for the difficulty in epitaxially preparing non-centrosymmetric materials are analyzed. Subsequently, the growth mechanisms and recent advances in the preparation of two-dimensional single crystal materials assisted by atomic steps are presented. The theoretical basis and universality of atomic step-controlled nucleation in two-dimensional single crystal material are analyzed. Furthermore, the challenges and future directions for achieving large-scale, directionally controllable two-dimensional single crystal materials are predicted. Finally, potential applications of the step method in the future scalable chip device fabrication are systematically discussed.
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Keywords:
- two-dimensional single crystal materials /
- atomic steps /
- non-centrosymmetry /
- epitaxial growth
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图 2 (a)中心对称和(b)非中心对称二维材料的原子结构示意图. 图(a)中灰色圆球对应同种元素原子; 图(b)中橙色圆球和蓝色圆球分别对应2种元素原子. 中心对称的结构翻转180°后可以复原, 非中心对称的结构翻转180°后无法复原
Fig. 2. Schematic diagrams of atomic structure of (a) centrosymmetric and (b) non-centrosymmetric 2D materials. Gray balls in Fig. (a) correspond to the same kind of atoms, orange and blue balls in Fig. (b) correspond to two kinds of atoms, respectively. A centrosymmetric structure can be restored after being turned over 180°, and a non-centrosymmetric structure cannot be restored after being turned over 180°.
图 4 (a) Ge (110)面单向排列石墨烯SEM图[142]; (b)单晶单层石墨烯的HRTEM图[142]; (c)石墨烯种子沿Ge (110)面的[
$ \overline 1 10 $ ]方向单向排列的AFM图[127]; (d), (e)石墨烯成核与台阶边缘对接的单向排列示意图[127]Fig. 4. (a) SEM image of unidirectional graphene grown on Ge (110) surface[142]; (b) HRTEM image of single crystal monolayer graphene[142]; (c) AFM image of graphene seeds aligned along [
$ \overline 1 10 $ ] direction of Ge (110) surface[127]; (d), (e) schematic illustration of graphene nucleation docking with the step edge for unidirectional alignment[127].图 5 (a) Cu (110)面单向排列的hBN SEM图; (b) hBN晶畴拼接处的TEM图, 插图为低倍TEM图; (c), (d) H2在1000 ℃下经30 min刻蚀Cu(110)和Cu(111)上hBN的SEM图; (e) hBN晶格之字形边缘与Cu(110)表面的Cu
$ \langle {211} \rangle $ 方向台阶结合原子示意图; (f)不同hBN边缘与Cu (110)表面的Cu$ \langle {211} \rangle $ 方向台阶形成能[158]Fig. 5. (a) SEM image of as-grown unidirectionally aligned hBN domains on Cu (110) substrate; (b) TEM images of neighboring merged hBN domains, inset shows the same image at a lower magnification; (c), (d) SEM images of hBN film as-grown on Cu(110) and Cu(111) surfaces after H2 etching at 1, 000 ℃ for 30 min; (e) atomic configuration of a zigzag edge of hBN lattice attaching to the Cu
$ \left\langle {211} \right\rangle $ atomic step edge on the vicinal Cu (110) surface; (f) formation energies of various hBN edges attached to a Cu$\langle {211}\rangle $ step edge of vicinal Cu(110) substrate[158].图 6 (a), (b)制备单晶Au (111)的示意图及CVD法在其表面生长MoS2的SEM图[169]; (c)—(e) Au (607) , Au (2 1 11) 面的MoS2 SEM以及拉曼图[170]; (f), (h)MoS2形态变化示意图; (g), (i)不同S/Mo比例下制备的2D MoS2三角形、1D MoS2纳米带SEM图[171]
Fig. 6. (a), (b) Schematic illustration of processes of single crystal Au(111) formation and SEM image of MoS2 grown on its surface by CVD method[169]; (c)–(e) SEM images and Raman spectra of MoS2 on Au (607), Au (2 1 11)facets[170]; (f), (h) schematic illustration of the morphological evolution of MoS2; (g), (i) SEM images of 2D monolayer MoS2 triangles and 1D MoS2 nanoribbons at different S/Mo ratios[171].
图 7 (a) O2刻蚀WS2薄膜后的SEM图; (b)对齐WS2岛拼接区域STEM图; (c) WS2晶格STEM图; (d) 2 inch单层WS2薄膜光学图; (e) a-Al2O3独立WS2晶畴光学图; (f), (g)WS2晶畴AFM图, 台阶方向
$\langle 1\bar 1 01 \rangle$ [174]Fig. 7. (a) SEM image of WS2 films after O2 etching; (b) STEM image of merged area of aligned WS2 islands; (c) STEM image of WS2 lattice; (d) photograph of 2 inch WS2 monolayer thin film; (e) optical image of individual WS2 islands on a-Al2O3; (f), (g) AFM image of a WS2 island, the direction of the steps is
$ \langle1\bar 1 01 \rangle$ [174].图 8 不同成核位置导致不同生长结果的原理示意图 (a)同时在台阶边缘和台阶平面处成核会导致正反取向; (b)只在台阶边缘处成核会导致单一取向
Fig. 8. Schematic diagrams of different growth results at different nucleation positions: (a) Positive and negative orientation when nucleation occur on both step edges and terrace; (b) single orientation when nucleation only occurs on step edges.
图 9 (a)退火前c-Al2O3表面; (b)退火中c-Al2O3表面; (c)长时间退火后c-Al2O3表面; (d)MoS2边缘同氧空位缺陷台阶与无氧空位平行台阶结合能; (e)反平行MoS2晶畴跨不同台阶(Ⅰ, Ⅱ和Ⅲ)能量; (f)3种台阶边缘处MoS2边缘[180]
Fig. 9. (a) Original c-Al2O3 surface before annealing; (b) original c-Al2O3 surface during annealing; (c) original c-Al2O3 surface after a long annealing time; (d) binding energy of a MoS2 grain on a straight parallel step with O vacancy and on a defective step without O vacancy; (e) energy difference between antiparallel MoS2 grains that cross different types of step edges (Ⅰ, Ⅱ and Ⅲ); (f) MoS2 grain on three types of step edges[180].
图 10 (a), (b)穿过c-Al2O3台阶边缘的2个反平行WS2晶粒示意图; (c) 2个反平行WS2晶粒之间的能量差; (d), (e)穿过a-Al2O3台阶边缘的2个反平行WS2(MoS2)晶粒示意图; (f) 2个反平行WS2(MoS2)晶粒之间的能量差, 沿着不同方向的台阶都是为了打破反平行线[180]
Fig. 10. (a), (b) Schematic diagrams of two antiparallel WS2 grains that across a step edge of c-Al2O3; (c) energy difference between two antiparallel WS2 grains; (d), (e) schematic diagrams of two antiparallel WS2 (MoS2) grains that across a step edge of a-Al2O3; (f) energy difference between two antiparallel WS2 (MoS2) grains. Steps along different directions all work for breaking of antiparallel alignments[180].
表 1 二维材料的应用领域及其挑战
Table 1. Applications and future challenges of two-dimensional materials.
领域 应用方向 优势 挑战 电子 晶体管、传感器、存储设备、互连、柔性电子产品、透明导电薄膜 高载流子迁移率、可调带隙、优异的机械和化学稳定性 可扩展性、可重复性、接口工程、设备集成、环境稳定性 光电子 LEDs、太阳能电池、光电探测、光调制器、吸收器 高载流子迁移率、可调带隙、优异的光吸收和发射 可重复性、环境稳定性、界面能源、设备集成、成本 催化 水分解、CO2还原、析氢反应、氧化还原反应 高比表面积、可调电子和化学性能、催化活性 可扩展性、反应稳定性、优异的选择性、成本 储能 电池、超级电容器、燃料电池、电催化、储氢 高表面积、可调的电子和化学性能、优异的电化学性能 可扩展性、反应稳定性、选择性、成本、毒性 传感器 气体、生物、应变传感器 灵敏度高、选择性好、电子和化学性能可调、稳定性好 可扩展性、环境稳定性、选择性、设备集成 生物医学 药物输送、生物传感、组织工程、生物成像 生物相容性、高表面积、可调的电子和化学性质、稳定性 选择性、可扩展性、毒性、生物环境稳定性、监管批准 环境 水处理、空气净化、能量收集 高表面积、电子和化学性能可调、优异的光催化和电催化 可扩展性、环境稳定性、选择性、成本 表 2 衬底台阶调控TMDs生长[180]
Table 2. Controversial growth behaviours of TMDs on substrates with steps[180].
Substrate TMDs Alignment/% Symmetry
breakingRef. a-Al2O3 WS2 99 √ [174] a-Al2O3 MoS2 86 √ [181] c-Al2O3 MoS2 99 √ [16] c-Al2O3 WS2 >90 √ [182] c-Al2O3 WSe2 92 √ [105] Au(533) WS2 >90 √ [183] Au(111) MoS2 99 √ [184] Au(111) MoS2 98 √ [169] β-Ga2O3 MoS2 >90 √ [172] c-Al2O3 MoS2 50 × [177] c-Al2O3 MoS2 50 × [178] c-Al2O3 MoS2 60 × [173] c-Al2O3 MoS2 50 × [185] c-Al2O3 MoS2 56 × [176] Au(111) MoS2 50 × [186] Au(111) MoS2 50 × [187] Ag(111) MoS2 50 × [188] -
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