Pressure strain control of electronic structure of intrinsic magnetic topological insulator MnBi<sub>2</sub>Te<sub>4</sub>

Guo Wen-Ti; Huang Lu; Xu Gui-Gui; Zhong Ke-Hua; Zhang Jian-Min; Huang Zhi-Gao

doi:10.7498/aps.70.20201237

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Guo Wen-Ti, Huang Lu, Xu Gui-Gui, Zhong Ke-Hua, Zhang Jian-Min, Huang Zhi-Gao. Pressure strain control of electronic structure of intrinsic magnetic topological insulator MnBi2Te4J. Acta Physica Sinica, 2021, 70(4): 047101. DOI: 10.7498/aps.70.20201237

Citation:

Guo Wen-Ti, Huang Lu, Xu Gui-Gui, Zhong Ke-Hua, Zhang Jian-Min, Huang Zhi-Gao. Pressure strain control of electronic structure of intrinsic magnetic topological insulator MnBi2Te4J. Acta Physica Sinica, 2021, 70(4): 047101. DOI: 10.7498/aps.70.20201237

Citation:

Guo Wen-Ti, Huang Lu, Xu Gui-Gui, Zhong Ke-Hua, Zhang Jian-Min, Huang Zhi-Gao. Pressure strain control of electronic structure of intrinsic magnetic topological insulator MnBi2Te4J. Acta Physica Sinica, 2021, 70(4): 047101. DOI: 10.7498/aps.70.20201237